Pagina 56 - Prodotti Microsemi Corporation - Diodi - Raddrizzatori - Singoli

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MSASC25W100K	Microsemi Corporation	DIODE SCHOTTKY 100V 25A 2THINKEY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 910mV @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 2-ThinKey? Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Azione5.904	100V	25A	910mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Surface Mount	-	2-ThinKey?	-65°C ~ 175°C
UTR4340	Microsemi Corporation	DIODE 400V 4A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: B, Axial	Azione3.584	400V	4A	1.1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	5µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTXV1N914UR	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-213AA	Azione3.472	75V	200mA	1.2V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	2.8pF @ 1.5V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
JANTXV1N914	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 (DO-204AH) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AH, DO-35, Axial	Azione5.296	75V	200mA	1.2V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	2.8pF @ 1.5V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 175°C