Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 75V 300MA D-MELF
|
pacchetto: SQ-MELF, D |
Azione3.472 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 300MA D-MELF
|
pacchetto: SQ-MELF, D |
Azione5.584 |
|
50V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA UB
|
pacchetto: 3-SMD, No Lead |
Azione7.280 |
|
75V | 300mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA UB
|
pacchetto: 3-SMD, No Lead |
Azione2.688 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA UB
|
pacchetto: 3-SMD, No Lead |
Azione5.808 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA UB
|
pacchetto: 3-SMD, No Lead |
Azione6.928 |
|
75V | 300mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 300MA B-MELF
|
pacchetto: SQ-MELF, B |
Azione7.376 |
|
50V | 300mA | 1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1.4A E-MELF
|
pacchetto: SQ-MELF, E |
Azione2.720 |
|
1000V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1000V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1.4A E-MELF
|
pacchetto: SQ-MELF, E |
Azione2.656 |
|
1000V | 1.4A | 1.6V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1000V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.1KV 1.4A D5B
|
pacchetto: E, Axial |
Azione4.784 |
|
1100V | 1.4A | 1.6V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | E-PAK | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1.4A E-MELF
|
pacchetto: SQ-MELF, E |
Azione4.192 |
|
1000V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 1000V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 900V 1.4A E-MELF
|
pacchetto: SQ-MELF, E |
Azione7.536 |
|
900V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 900V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 900V 1.4A E-MELF
|
pacchetto: SQ-MELF, E |
Azione4.656 |
|
900V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 900V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 900V 1.4A E-MELF
|
pacchetto: SQ-MELF, E |
Azione7.152 |
|
900V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 900V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1.4A E-MELF
|
pacchetto: SQ-MELF, E |
Azione6.352 |
|
800V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 800V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1.4A E-MELF
|
pacchetto: SQ-MELF, E |
Azione7.456 |
|
800V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 800V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1.75A E-MELF
|
pacchetto: SQ-MELF, E |
Azione3.936 |
|
600V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 600V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1.75A E-MELF
|
pacchetto: SQ-MELF, E |
Azione7.936 |
|
600V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 600V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1.75A E-MELF
|
pacchetto: SQ-MELF, E |
Azione3.360 |
|
600V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 600V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1.75A E-MELF
|
pacchetto: SQ-MELF, E |
Azione5.696 |
|
400V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 400V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1.75A E-MELF
|
pacchetto: SQ-MELF, E |
Azione3.952 |
|
400V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 400V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1.75A E-MELF
|
pacchetto: SQ-MELF, E |
Azione2.976 |
|
400V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 400V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1.75A E-MELF
|
pacchetto: SQ-MELF, E |
Azione5.072 |
|
200V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 200V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1.75A A-MELF
|
pacchetto: SQ-MELF, A |
Azione5.920 |
|
200V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1.75A E-MELF
|
pacchetto: SQ-MELF, E |
Azione7.248 |
|
200V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 200V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A A-MELF
|
pacchetto: SQ-MELF, A |
Azione3.248 |
|
1000V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1000V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A A-MELF
|
pacchetto: SQ-MELF, A |
Azione5.040 |
|
1000V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 1000V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL
|
pacchetto: A, Axial |
Azione2.000 |
|
1000V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 900V 1A A-MELF
|
pacchetto: SQ-MELF, A |
Azione2.784 |
|
900V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 900V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 900V 1A A-MELF
|
pacchetto: SQ-MELF, A |
Azione6.448 |
|
900V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 900V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |