Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
MOSFET 4P-CH 100V 0.75A MO-036AB
|
pacchetto: 14-DIP (0.300", 7.62mm) |
Azione6.504 |
|
Standard | 100V | 750mA | 1.4 Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
||
Microsemi Corporation |
MOSFET 4N-CH 100V 1A MO-036AB
|
pacchetto: 14-DIP (0.300", 7.62mm) |
Azione7.552 |
|
Standard | 100V | 1A | 700 mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
||
Microsemi Corporation |
MOSFET 4P-CH 100V 0.75A MO-036AB
|
pacchetto: 14-DIP (0.300", 7.62mm) |
Azione4.144 |
|
Standard | 100V | 750mA | 1.4 Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
||
Microsemi Corporation |
MOSFET 4N-CH 100V 1A MO-036AB
|
pacchetto: 14-DIP (0.300", 7.62mm) |
Azione2.848 |
|
Standard | 100V | 1A | 700 mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
||
Microsemi Corporation |
MOSFET 4P-CH 100V 0.75A MO-036AB
|
pacchetto: 14-DIP (0.300", 7.62mm) |
Azione7.024 |
|
Standard | 100V | 750mA | 1.4 Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
||
Microsemi Corporation |
MOSFET 4N-CH 100V 1A MO-036AB
|
pacchetto: 14-DIP (0.300", 7.62mm) |
Azione4.448 |
|
Standard | 100V | 1A | 700 mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
||
Microsemi Corporation |
MOSFET 4P-CH 100V 0.75A MO-036AB
|
pacchetto: 14-DIP (0.300", 7.62mm) |
Azione6.336 |
|
Standard | 100V | 750mA | 1.4 Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | - |
||
Microsemi Corporation |
MOSFET 4N-CH 100V 1A MO-036AB
|
pacchetto: 14-DIP (0.300", 7.62mm) |
Azione3.328 |
|
Standard | 100V | 1A | 700 mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
||
Microsemi Corporation |
MOSFET 2N-CH 600V 39A SP1
|
pacchetto: SP1 |
Azione3.568 |
|
Super Junction | 600V | 39A | 70 mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | - | Chassis Mount | SP1 | SP1 |
||
Microsemi Corporation |
MOSFET 2N-CH 600V 49A SP1
|
pacchetto: SP1 |
Azione4.240 |
|
Super Junction | 600V | 49A | 45 mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
||
Microsemi Corporation |
MOSFET 2N-CH 600V 39A SP1
|
pacchetto: SP1 |
Azione6.272 |
|
Super Junction | 600V | 39A | 70 mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
||
Microsemi Corporation |
MOSFET 2N-CH 600V 49A SP1
|
pacchetto: SP1 |
Azione2.096 |
|
Standard | 600V | 49A | 45 mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
||
Microsemi Corporation |
MOSFET 2N-CH 1200V 17A SP3
|
pacchetto: SP3 |
Azione5.264 |
|
Standard | 1200V (1.2kV) | 17A | 684 mOhm @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | 5155pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
||
Microsemi Corporation |
MOSFET 2N-CH 100V 139A SP3
|
pacchetto: SP3 |
Azione7.984 |
|
Standard | 100V | 139A | 10 mOhm @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | 9875pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
||
Microsemi Corporation |
MOSFET 2N-CH 1000V 22A SP3
|
pacchetto: SP3 |
Azione5.920 |
|
Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
||
Microsemi Corporation |
MOSFET 4N-CH 900V 30A SP2
|
pacchetto: SP2 |
Azione2.240 |
|
Super Junction | 900V | 30A | 120 mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP2 | SP2 |
||
Microsemi Corporation |
MOSFET 2N-CH 900V 30A SP1
|
pacchetto: SP1 |
Azione2.400 |
|
Super Junction | 900V | 30A | 120 mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
||
Microsemi Corporation |
MOSFET 2N-CH 900V 30A SP1
|
pacchetto: SP1 |
Azione5.008 |
|
Super Junction | 900V | 30A | 120 mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
||
Microsemi Corporation |
MOSFET MODULE
|
pacchetto: - |
Azione6.624 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
MOSFET SIC PHASE LEG MODULE
|
pacchetto: Module |
Azione5.008 |
|
- | - | - | - | - | - | - | - | - | Chassis Mount | Module | Module |
||
Microsemi Corporation |
MOSFET 2N-CH 600V 20A SP1
|
pacchetto: SP1 |
Azione7.520 |
|
Standard | 600V | 20A | 276 mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | 5316pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
||
Microsemi Corporation |
MOSFET 6N-CH 500V 51A SP6-P
|
pacchetto: SP6 |
Azione5.952 |
|
Standard | 500V | 51A | 78 mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
||
Microsemi Corporation |
MOSFET 2N-CH 500V 90A SP4
|
pacchetto: SP4 |
Azione6.144 |
|
Standard | 500V | 90A | 45 mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
||
Microsemi Corporation |
MOSFET 2N-CH 500V 149A LP8
|
pacchetto: SP4 |
Azione3.648 |
|
Standard | 500V | 149A | 25 mOhm @ 74.5A, 10V | 4V @ 8mA | 1200nC @ 10V | 29600pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
||
Microsemi Corporation |
MOSFET 2N-CH 500V 163A SP6
|
pacchetto: SP6 |
Azione7.552 |
|
Standard | 500V | 163A | 22.5 mOhm @ 81.5A, 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | 1136W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
||
Microsemi Corporation |
MOSFET 2N-CH 500V 46A SP4
|
pacchetto: SP4 |
Azione4.032 |
|
Standard | 500V | 46A | 90 mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |