Pagina 40 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  40/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot QS5U21TR
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT5
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
pacchetto: SOT-23-5 Thin, TSOT-23-5
Azione36.000
MOSFET (Metal Oxide)
20V
1.5A (Ta)
2.5V, 4.5V
2V @ 1mA
4.2nC @ 4.5V
325pF @ 10V
±12V
Schottky Diode (Isolated)
1.25W (Ta)
200 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT5
SOT-23-5 Thin, TSOT-23-5
hot RSQ025P03TR
Rohm Semiconductor

MOSFET P-CH 30V 2.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione537.456
MOSFET (Metal Oxide)
30V
2.5A (Ta)
4V, 10V
2.5V @ 1mA
4.4nC @ 5V
320pF @ 10V
±20V
-
1.25W (Ta)
110 mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot RAL045P01TCR
Rohm Semiconductor

MOSFET P-CH 12V 4.5A TUMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V
  • Vgs (Max): -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione72.000
MOSFET (Metal Oxide)
12V
4.5A (Ta)
1.5V, 4.5V
1V @ 1mA
40nC @ 4.5V
4200pF @ 6V
-8V
-
1W (Ta)
30 mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
hot US5U29TR
Rohm Semiconductor

MOSFET P-CH 20V 1A TUMT5

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT5
  • Package / Case: 6-SMD (5 Leads), Flat Lead
pacchetto: 6-SMD (5 Leads), Flat Lead
Azione62.448
MOSFET (Metal Oxide)
20V
1A (Ta)
2.5V, 4.5V
2V @ 1mA
2.1nC @ 5V
150pF @ 10V
±12V
Schottky Diode (Isolated)
1W (Ta)
390 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
TUMT5
6-SMD (5 Leads), Flat Lead
hot US5U30TR
Rohm Semiconductor

MOSFET P-CH 20V 1A TUMT5

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT5
  • Package / Case: 6-SMD (5 Leads), Flat Lead
pacchetto: 6-SMD (5 Leads), Flat Lead
Azione14.052
MOSFET (Metal Oxide)
20V
1A (Ta)
2.5V, 4.5V
2V @ 1mA
2.1nC @ 4.5V
150pF @ 10V
±12V
Schottky Diode (Isolated)
1W (Ta)
390 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
TUMT5
6-SMD (5 Leads), Flat Lead
hot RTQ035P02TR
Rohm Semiconductor

MOSFET P-CH 20V 3.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione551.316
MOSFET (Metal Oxide)
20V
3.5A (Ta)
2.5V, 4.5V
2V @ 1mA
10.5nC @ 4.5V
1200pF @ 10V
±12V
-
1.25W (Ta)
65 mOhm @ 3.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
QS5U26TR
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT5
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
pacchetto: SOT-23-5 Thin, TSOT-23-5
Azione5.648
MOSFET (Metal Oxide)
20V
1.5A (Ta)
2.5V, 4.5V
2V @ 1mA
4.2nC @ 4.5V
325pF @ 10V
±12V
Schottky Diode (Isolated)
1.25W (Ta)
200 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT5
SOT-23-5 Thin, TSOT-23-5
QS5U23TR
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT5
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
pacchetto: SOT-23-5 Thin, TSOT-23-5
Azione3.472
MOSFET (Metal Oxide)
20V
1.5A (Ta)
2.5V, 4.5V
2V @ 1mA
4.2nC @ 4.5V
325pF @ 10V
±12V
Schottky Diode (Isolated)
1.25W (Ta)
200 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT5
SOT-23-5 Thin, TSOT-23-5
hot US5U2TR
Rohm Semiconductor

MOSFET N-CH 30V 1.4A TUMT5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT5
  • Package / Case: 6-SMD (5 Leads), Flat Lead
pacchetto: 6-SMD (5 Leads), Flat Lead
Azione36.000
MOSFET (Metal Oxide)
30V
1.4A (Ta)
4V, 10V
2.5V @ 1mA
2nC @ 5V
70pF @ 10V
±20V
Schottky Diode (Isolated)
1W (Ta)
240 mOhm @ 1.4A, 10V
150°C (TJ)
Surface Mount
TUMT5
6-SMD (5 Leads), Flat Lead
hot US5U1TR
Rohm Semiconductor

MOSFET N-CH 30V 1.5A TUMT5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT5
  • Package / Case: 6-SMD (5 Leads), Flat Lead
pacchetto: 6-SMD (5 Leads), Flat Lead
Azione72.000
MOSFET (Metal Oxide)
30V
1.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
2.2nC @ 4.5V
80pF @ 10V
±12V
Schottky Diode (Isolated)
1W (Ta)
240 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT5
6-SMD (5 Leads), Flat Lead
QS6U22TR
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione7.184
MOSFET (Metal Oxide)
20V
1.5A (Ta)
2.5V, 4.5V
2V @ 1mA
3nC @ 4.5V
270pF @ 10V
±12V
Schottky Diode (Isolated)
1.25W (Ta)
215 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot QS5U16TR
Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT5
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
pacchetto: SOT-23-5 Thin, TSOT-23-5
Azione36.000
MOSFET (Metal Oxide)
30V
2A (Ta)
2.5V, 4.5V
1.5V @ 1mA
3.9nC @ 4.5V
175pF @ 10V
±12V
Schottky Diode (Isolated)
900mW (Ta)
100 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TSMT5
SOT-23-5 Thin, TSOT-23-5
hot RSR020P03TL
Rohm Semiconductor

MOSFET P-CH 30V 2A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione1.070.232
MOSFET (Metal Oxide)
30V
2A (Ta)
4V, 10V
-
4.3nC @ 5V
370pF @ 10V
±20V
-
1W (Ta)
120 mOhm @ 2A, 10V
-
Surface Mount
TSMT3
SC-96
hot RTQ030P02TR
Rohm Semiconductor

MOSFET P-CH 20V 3A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione659.460
MOSFET (Metal Oxide)
20V
3A (Ta)
2.5V, 4.5V
2V @ 1mA
9nC @ 4.5V
800pF @ 10V
±12V
-
1.25W (Ta)
80 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot RXR035N03TCL
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione36.000
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4V, 10V
2.5V @ 1mA
3.3nC @ 5V
180pF @ 10V
±20V
-
1W (Ta)
50 mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RTQ025P02TR
Rohm Semiconductor

MOSFET P-CH 20V 2.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione380.760
MOSFET (Metal Oxide)
20V
2.5A (Ta)
2.5V, 4.5V
2V @ 1mA
6.4nC @ 4.5V
580pF @ 10V
±12V
-
1.25W (Ta)
100 mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot RW1C020UNT2R
Rohm Semiconductor

MOSFET N-CH 20V 2A WEMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione36.000
MOSFET (Metal Oxide)
20V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
2nC @ 4.5V
180pF @ 10V
±10V
-
400mW (Ta)
105 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
6-WEMT
SOT-563, SOT-666
ES6U42T2R
Rohm Semiconductor

MOSFET P-CH 20V 1A WEMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione3.264
MOSFET (Metal Oxide)
20V
1A (Ta)
2.5V, 4.5V
2V @ 1mA
2.1nC @ 4.5V
150pF @ 10V
±12V
Schottky Diode (Body)
700mW (Ta)
390 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
6-WEMT
SOT-563, SOT-666
hot RTQ020N05TR
Rohm Semiconductor

MOSFET N-CH 45V 2A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione396.372
MOSFET (Metal Oxide)
45V
2A (Ta)
2.5V, 4.5V
1.5V @ 1mA
2.3nC @ 4.5V
150pF @ 10V
±12V
-
600mW (Ta)
190 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot RW1C015UNT2R
Rohm Semiconductor

MOSFET N-CH 20V 1.5A WEMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione96.000
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.5V, 4.5V
1V @ 1mA
1.8nC @ 4.5V
110pF @ 10V
±10V
-
400mW (Ta)
180 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
6-WEMT
SOT-563, SOT-666
RAL035P01TCR
Rohm Semiconductor

MOSFET P-CH 12V 3.5A TUMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 6V
  • Vgs (Max): -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 3.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione7.024
MOSFET (Metal Oxide)
12V
3.5A (Ta)
1.5V, 4.5V
1V @ 1mA
22nC @ 4.5V
2700pF @ 6V
-8V
-
1W (Ta)
42 mOhm @ 3.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
RTR011P02TL
Rohm Semiconductor

MOSFET P-CH 20V 1.1A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione5.712
MOSFET (Metal Oxide)
20V
1.1A (Ta)
-
-
-
-
-
-
-
-
-
Surface Mount
TSMT3
SC-96
hot RSF010P05TL
Rohm Semiconductor

MOSFET P-CH 45V 1A TUMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 460 mOhm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione36.000
MOSFET (Metal Oxide)
45V
1A (Ta)
4V, 10V
2.5V @ 1mA
2.3nC @ 5V
160pF @ 10V
±20V
-
800mW (Ta)
460 mOhm @ 1A, 10V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
hot RRQ020P03TCR
Rohm Semiconductor

MOSFET P-CH 30V 2A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione396.360
MOSFET (Metal Oxide)
30V
2A (Ta)
4V, 10V
2.5V @ 1mA
3.2nC @ 5V
230pF @ 10V
±20V
-
1.25W (Ta)
160 mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
ES6U41T2R
Rohm Semiconductor

MOSFET N-CH 30V 1.5A WEMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione5.824
MOSFET (Metal Oxide)
30V
1.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
2.2nC @ 4.5V
80pF @ 10V
±12V
Schottky Diode (Isolated)
700mW (Ta)
240 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
6-WEMT
SOT-563, SOT-666
RAQ045P01MGTCR
Rohm Semiconductor

1.5V DRIVE PCH MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione4.656
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot RSF015N06TL
Rohm Semiconductor

MOSFET N-CH 60V 1.5A TUMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione45.240
MOSFET (Metal Oxide)
60V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
2nC @ 5V
110pF @ 10V
20V
-
800mW (Ta)
290 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
ES6U2T2R
Rohm Semiconductor

MOSFET N-CH 20V 1.5A WEMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione3.648
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.5V, 4.5V
1V @ 1mA
1.8nC @ 4.5V
110pF @ 10V
±10V
Schottky Diode (Isolated)
700mW (Ta)
180 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
6-WEMT
SOT-563, SOT-666