Pagina 45 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RAQ045P01TCR	Rohm Semiconductor	MOSFET P-CH 12V 4.5A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione36.000	MOSFET (Metal Oxide)	12V	4.5A (Ta)	1.5V, 4.5V	1V @ 1mA	40nC @ 4.5V	4200pF @ 6V	-8V	-	600mW (Ta)	30 mOhm @ 4.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RP1L080SNTR	Rohm Semiconductor	MOSFET N-CH 60V 8A MPT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	pacchetto: 6-SMD, Flat Leads	Azione4.992	MOSFET (Metal Oxide)	60V	8A (Ta)	4V, 10V	3V @ 1mA	40nC @ 10V	1700pF @ 10V	±20V	-	2W (Ta)	24 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RP1L055SNTR	Rohm Semiconductor	MOSFET N-CH 60V 5.5A MPT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	pacchetto: 6-SMD, Flat Leads	Azione5.824	MOSFET (Metal Oxide)	60V	5.5A (Ta)	4V, 10V	3V @ 1mA	14nC @ 10V	730pF @ 10V	±20V	-	2W (Ta)	49 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RP1H065SPTR	Rohm Semiconductor	MOSFET P-CH 45V 6.5A MPT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	pacchetto: 6-SMD, Flat Leads	Azione6.224	MOSFET (Metal Oxide)	45V	6.5A (Ta)	4V, 10V	3V @ 1mA	28nC @ 5V	3200pF @ 10V	±20V	-	2W (Ta)	31 mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RP1E125XNTR	Rohm Semiconductor	MOSFET N-CH 30V 12.5A MPT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	pacchetto: 6-SMD, Flat Leads	Azione7.744	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4V, 10V	2.5V @ 1mA	12.7nC @ 5V	1000pF @ 10V	±20V	-	2W (Ta)	12 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RP1E100XNTR	Rohm Semiconductor	MOSFET N-CH 30V 10A MPT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	pacchetto: 6-SMD, Flat Leads	Azione4.592	MOSFET (Metal Oxide)	30V	10A (Ta)	4V, 10V	2.5V @ 1mA	11nC @ 5V	800pF @ 10V	±20V	-	2W (Ta)	13 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RP1E090XNTCR	Rohm Semiconductor	MOSFET N-CH 30V 9A MPT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	pacchetto: 6-SMD, Flat Leads	Azione4.144	MOSFET (Metal Oxide)	30V	9A (Ta)	4V, 10V	2.5V @ 1mA	6.8nC @ 5V	440pF @ 10V	±20V	-	2W (Ta)	17 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RP1E075RPTR	Rohm Semiconductor	MOSFET P-CH 30V 7.5A MPT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	pacchetto: 6-SMD, Flat Leads	Azione3.856	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4V, 10V	2.5V @ 1mA	21nC @ 5V	1900pF @ 10V	±20V	-	2W (Ta)	21 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RP1E070XNTCR	Rohm Semiconductor	MOSFET N-CH 30V 7A MPT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	pacchetto: 6-SMD, Flat Leads	Azione2.720	MOSFET (Metal Oxide)	30V	7A (Ta)	4V, 10V	2.5V @ 1mA	5.8nC @ 5V	390pF @ 10V	±20V	-	2W (Ta)	28 mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RRH050P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 5A SOP8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione7.616	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	2.5V @ 1mA	9.2nC @ 5V	850pF @ 10V	±20V	-	650mW (Ta)	50 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RP1E100RPTR	Rohm Semiconductor	MOSFET P-CH 30V 10A MPT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	pacchetto: 6-SMD, Flat Leads	Azione4.736	MOSFET (Metal Oxide)	30V	10A (Ta)	10V	2.5V @ 1mA	39nC @ 5V	3600pF @ 10V	±20V	-	2W (Ta)	12.6 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RP1A090ZPTR	Rohm Semiconductor	MOSFET P-CH 12V 9A MPT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 9A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	pacchetto: 6-SMD, Flat Leads	Azione8.940	MOSFET (Metal Oxide)	12V	9A (Ta)	1.5V, 4.5V	1V @ 1mA	59nC @ 4.5V	7400pF @ 6V	±10V	-	2W (Ta)	12 mOhm @ 9A, 4.5V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RCD040N25TL	Rohm Semiconductor	MOSFET N-CH 250V 4A SOT-428 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione36.540	MOSFET (Metal Oxide)	250V	4A (Ta)	10V	-	-	-	±30V	-	20W (Tc)	-	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RRS090P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 9A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC	pacchetto: 8-SOIC	Azione3.424	MOSFET (Metal Oxide)	30V	9A (Ta)	-	-	-	-	-	-	-	-	-	Surface Mount	8-SOIC	8-SOIC
RSS080N05FU6TB	Rohm Semiconductor	MOSFET N-CH 60V 8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione210.000	MOSFET (Metal Oxide)	60V	8A (Ta)	-	-	-	-	-	-	-	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)