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Prodotti EPC

Record 103
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EPC8003ENGR
EPC

TRANS GAN 100V 2.5A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 50V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 5V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: Die
Azione2.912
EPC8008ENGR
EPC

TRANS GAN 40V 2.7A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 20V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 325 mOhm @ 500mA, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: Die
Azione5.568
EPC2029ENGRT
EPC

TRANS GAN 80V 31A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 40V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: Die
Azione7.984
EPC2024ENG
EPC

TRANS GAN 40V 60A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 19mA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: Die
Azione3.920
EPC2021ENG
EPC

TRANS GAN 80V 60A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 14mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: Die
Azione7.752
EPC2037ENGR
EPC

TRANS GAN 100V BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 50V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: Die
Azione43.776
EPC2035
EPC

TRANS GAN 60V 1A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 30V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 1A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: Die
Azione342.840
EPC2032
EPC

TRANS GAN 100V 48A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 11mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: Die
Azione70.512
EPC2001
EPC

TRANS GAN 100V 25A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die Outline (11-Solder Bar)
  • Package / Case: Die
pacchetto: Die
Azione223.170
EPC2015C
EPC

TRANS GAN 40V 33A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 20V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: Die
Azione224.706
EPC2019
EPC

TRANS GAN 200V 8.5A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: Die
Azione279.426
EPC2007C
EPC

TRANS GAN 100V 6A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 50V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die Outline (5-Solder Bar)
  • Package / Case: Die
pacchetto: Die
Azione129.366
EPC2107ENGRT
EPC

TRANS GAN 3N-CH 100V BUMPED DIE

  • FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-VFBGA
  • Supplier Device Package: 9-BGA (1.35x1.35)
pacchetto: 9-VFBGA
Azione4.496
EPC2101ENGRT
EPC

TRANS GAN ASYMMETRICAL HALF BRID

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione3.200
GAN FET BOOK-WIPO
EPC

TEXT WIRELESS POWER HANDBOOK

  • Accessory Type: Guide
  • For Use With/Related Products: -
pacchetto: -
Azione2.304
EPC2112ENGRT
EPC

200 V GAN IC FET DRIVER

  • Output Configuration: Low Side
  • Applications: DC-DC Converters
  • Interface: On/Off
  • Load Type: Inductive
  • Technology: MOSFET (Metal Oxide)
  • Rds On (Typ): 32 mOhm
  • Current - Output / Channel: 10A
  • Current - Peak Output: 40A
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Voltage - Load: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: -
  • Fault Protection: -
  • Mounting Type: Surface Mount
  • Package / Case: 10-XFBGA
  • Supplier Device Package: 10-BGA (2.9x1.1)
pacchetto: 10-XFBGA
Azione3.024
EPC21603
EPC

IC LASER DRVR 40V 10A LVDSLOGIC

  • Type: Laser Diode Driver
  • Data Rate: -
  • Number of Channels: 1
  • Voltage - Supply: 10V ~ 30V
  • Current - Supply: 47 mA
  • Current - Modulation: -
  • Current - Bias: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: Die
  • Supplier Device Package: Die
  • Mounting Type: Surface Mount
pacchetto: -
Azione29.700
EPC21701
EPC

IC GAN LASER DRVR 80V

  • Type: Laser Diode Driver
  • Data Rate: -
  • Number of Channels: 1
  • Voltage - Supply: 80V
  • Current - Supply: -
  • Current - Modulation: -
  • Current - Bias: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
  • Mounting Type: -
pacchetto: -
Azione114.174
EPC23101
EPC

Linear IC's

  • Applications: Switching Regulator
  • Current - Supply: 37mA
  • Voltage - Supply: 10V ~ 80V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 14-PowerWFQFN
  • Supplier Device Package: 14-QFN (3.5x5)
pacchetto: -
Request a Quote
EPC2204A
EPC

TRANS GAN 80V .006OHM AECQ101

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: -
Azione85.602
EPC2619ENGRT
EPC

TRANS GAN 80V .0033OHM 6LGA

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: -
Azione57.309
EPC2305ENGRT
EPC

TRANS GAN 150V .003OHM 3X5MM QFN

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 11mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 7-QFN (3x5)
  • Package / Case: 7-PowerWQFN
pacchetto: -
Azione7.245
EPC2102
EPC

GANFET 2N-CH 60V 23A DIE

  • FET Type: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 23A
  • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Azione375
EPC2101
EPC

GANFET 2N-CH 60V 9.5A/38A DIE

  • FET Type: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Azione99
EPC2110
EPC

GANFET 2N-CH 120V 3.4A DIE

  • FET Type: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Azione43.275
EPC2044
EPC

TRANSISTOR GAN 40V .0105OHM

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: -
Azione21.759
EPC2071
EPC

TRANS GAN 100V .0022OHM 21BMPD

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 13mA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: -
Azione26.166
EPC23101ENGRT
EPC

TRANS GAN 100V EPOWER STAGE

  • Output Configuration: Half Bridge
  • Applications: General Purpose
  • Interface: Logic
  • Load Type: Inductive, Capacitive, Resistive
  • Technology: Gallium Nitride (GaN) FETs
  • Rds On (Typ): 3.3mOhm
  • Current - Output / Channel: 65A
  • Current - Peak Output: -
  • Voltage - Supply: 10V ~ 80V
  • Voltage - Load: 10V ~ 80V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Features: Bootstrap Circuit, Slew Rate Controlled
  • Fault Protection: ESD, UVLO
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 14-PowerWFQFN
  • Supplier Device Package: 14-QFN (3.5x5)
pacchetto: -
Azione22.563