Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Fairchild/ON Semiconductor |
DIODE SCHOTTKY 40V 1A SMA
|
pacchetto: DO-214AC, SMA |
Azione290.952 |
|
40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -65°C ~ 125°C |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione54.480 |
|
100V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -50°C ~ 150°C |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 1.2KV 8A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione19.116 |
|
1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 100µA @ 1200V | 30pF @ 10V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione633.540 |
|
600V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 20A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.424 |
|
200V | 20A | 1.15V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | -65°C ~ 150°C |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 1KV 3A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione3.441.852 |
|
1000V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 30A TO220F
|
pacchetto: TO-220-2 Full Pack |
Azione5.872 |
|
200V | 30A | 1.15V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
||
Fairchild/ON Semiconductor |
DIODE SCHOTTKY 40V 5A TO220F
|
pacchetto: TO-220-2 Full Pack |
Azione2.480 |
|
40V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | - |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 150V 200MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione4.720 |
|
150V | 200mA | 1V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 60ns | 100nA @ 120V | 6pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione4.704 |
|
- | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | - |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 100V DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione5.632 |
|
100V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione116.928 |
|
600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 600V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -50°C ~ 150°C |