Prodotti Intersil - Transistor - FET, MOSFET - Array

Immagine	Numero di parte	Produttore	Descrizione	pacchetto	Azione	Quantità	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	GWS9294	Intersil	MOSFET 2N-CH 20V 10.1A 4QFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 3.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VDFN Supplier Device Package: 4-QFN (2x2)	pacchetto: 4-VDFN	Azione7.552		Standard	20V	10.1A (Ta)	13 mOhm @ 6.5A, 4.5V	1.5V @ 1mA	11nC @ 4V	900pF @ 10V	3.6W	-55°C ~ 150°C (TJ)	Surface Mount	4-VDFN	4-QFN (2x2)
	GWS9293	Intersil	MOSFET 2N-CH 20V 9.4A 4QFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 3.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VDFN Supplier Device Package: 4-QFN (2x2)	pacchetto: 4-VDFN	Azione7.840		Standard	20V	9.4A (Ta)	17 mOhm @ 3A, 4.5V	1.5V @ 1mA	3.5nC @ 4V	400pF @ 10V	3.6W	-55°C ~ 150°C (TJ)	Surface Mount	4-VDFN	4-QFN (2x2)