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Prodotti Microchip Technology - Transistor - FET, MOSFET - Array

Record 176
Pagina  4/7
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MSCMC170AM08CT6LIAG
Microchip Technology

SIC 2N-CH 1700V 280A SP6C LI

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 300A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 108mA
  • Gate Charge (Qg) (Max) @ Vgs: 1128nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 1000V
  • Power - Max: 1780W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C LI
pacchetto: -
Request a Quote
-
1700V (1.7kV)
280A (Tc)
11.7mOhm @ 300A, 20V
4V @ 108mA
1128nC @ 20V
22000pF @ 1000V
1780W (Tc)
-40°C ~ 150°C (TJ)
Chassis Mount
Module
SP6C LI
MSCSM70AM025T6AG
Microchip Technology

SIC 2N-CH 700V 689A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 24mA
  • Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
  • Power - Max: 1.882kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
700V
689A (Tc)
3.2mOhm @ 240A, 20V
2.4V @ 24mA
1290nC @ 20V
27000pF @ 700V
1.882kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120DDUM16CTBL3NG
Microchip Technology

SIC 4N-CH 1200V 150A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 560W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
150A
16mOhm @ 80A, 20V
2.8V @ 2mA
464nC @ 20V
6040pF @ 1000V
560W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70HM19T3AG
Microchip Technology

SIC 4N-CH 700V 124A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
  • Power - Max: 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione24
-
700V
124A (Tc)
19mOhm @ 40A, 20V
2.4V @ 4mA
215nC @ 20V
4500pF @ 700V
365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120VR1M31C1AG
Microchip Technology

SIC 2N-CH 1200V 89A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 395W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
89A (Tc)
31mOhm @ 40A, 20V
2.8V @ 3mA
232nC @ 20V
3020pF @ 1000V
395W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM170HRM233AG
Microchip Technology

SIC 4N-CH 1700V/1200V 124A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc), 89A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 5mA, 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V, 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V, 3020pF @ 1000V
  • Power - Max: 602W (Tc), 395W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1700V (1.7kV), 1200V (1.2kV)
124A (Tc), 89A (Tc)
22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V
3.2V @ 5mA, 2.8V @ 3mA
356nC @ 20V, 232nC @ 20V
6600pF @ 1000V, 3020pF @ 1000V
602W (Tc), 395W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120TLM08CAG
Microchip Technology

SIC 4N-CH 1200V 333A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
  • Power - Max: 1378W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
pacchetto: -
Azione15
-
1200V (1.2kV)
333A (Tc)
7.8mOhm @ 80A, 20V
2.8V @ 4mA
928nC @ 20V
12000pF @ 1000V
1378W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
APTMC120HR11CT3AG
Microchip Technology

SIC 2N-CH 1200V 26A SP3

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
  • Power - Max: 125W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3
pacchetto: -
Request a Quote
-
1200V (1.2kV)
26A (Tc)
98mOhm @ 20A, 20V
3V @ 5mA
62nC @ 20V
950pF @ 1000V
125W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
SP3
MSCSM70AM10CT3AG
Microchip Technology

SIC 2N-CH 700V 241A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
  • Power - Max: 690W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
pacchetto: -
Azione9
-
700V
241A (Tc)
9.5mOhm @ 80A, 20V
2.4V @ 8mA
430nC @ 20V
9000pF @ 700V
690W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MSCSM70TAM19CT3AG
Microchip Technology

SIC 6N-CH 700V 124A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
  • Power - Max: 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
pacchetto: -
Azione9
-
700V
124A (Tc)
19mOhm @ 40A, 20V
2.4V @ 4mA
215nC @ 20V
4500pF @ 700V
365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MSCSM70TLM19C3AG
Microchip Technology

SIC 4N-CH 700V 124A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
  • Power - Max: 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
pacchetto: -
Azione15
-
700V
124A (Tc)
19mOhm @ 40A, 20V
2.4V @ 4mA
215nC @ 20V
4500pF @ 700V
365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MSCSM120AM042CT6LIAG
Microchip Technology

SIC 2N-CH 1200V 495A SP6C LI

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
  • Power - Max: 2.031kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C LI
pacchetto: -
Request a Quote
-
1200V (1.2kV)
495A (Tc)
5.2mOhm @ 240A, 20V
2.8V @ 6mA
1392nC @ 20V
18100pF @ 1kV
2.031kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C LI
MSCSM170AM058CT6LIAG
Microchip Technology

SIC 2N-CH 1700V 353A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
  • Vgs(th) (Max) @ Id: 3.3V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
  • Power - Max: 1.642kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione6
-
1700V (1.7kV)
353A (Tc)
7.5mOhm @ 180A, 20V
3.3V @ 15mA
1068nC @ 20V
19800pF @ 1000V
1.642kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70VR1M10CT3AG
Microchip Technology

SIC 2N-CH 700V 241A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
  • Power - Max: 690W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione12
-
700V
241A (Tc)
9.5mOhm @ 80A, 20V
2.4V @ 8mA
430nC @ 20V
9000pF @ 700V
690W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120DUM027AG
Microchip Technology

SIC 2N-CH 1200V 733A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
  • Power - Max: 2968W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
733A (Tc)
3.5mOhm @ 360A, 20V
2.8V @ 9mA
2088nC @ 20V
27000pF @ 1000V
2968W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM170HM45CT3AG
Microchip Technology

SIC 4N-CH 1700V 64A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
  • Power - Max: 319W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione12
-
1700V (1.7kV)
64A (Tc)
45mOhm @ 30A, 20V
3.2V @ 2.5mA
178nC @ 20V
3300pF @ 1000V
319W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70TLM05CAG
Microchip Technology

SIC 4N-CH 700V 464A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 16mA
  • Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
  • Power - Max: 1277W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
pacchetto: -
Azione15
-
700V
464A (Tc)
4.8mOhm @ 160A, 20V
2.4V @ 16mA
860nC @ 20V
18000pF @ 700V
1277W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
MSCSM120DUM042AG
Microchip Technology

SIC 2N-CH 1200V 495A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
  • Power - Max: 2031W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
495A (Tc)
5.2mOhm @ 240A, 20V
2.8V @ 6mA
1392nC @ 20V
18100pF @ 1000V
2031W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120AM11T3AG
Microchip Technology

SIC 2N-CH 1200V 254A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
  • Power - Max: 1.067kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
254A (Tc)
10.4mOhm @ 120A, 20V
2.8V @ 9mA
696nC @ 20V
9060pF @ 1000V
1.067kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70TLM10C3AG
Microchip Technology

SIC 4N-CH 700V 241A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 8mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
  • Power - Max: 690W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Azione45
-
700V
241A (Tc)
9.5mOhm @ 80A, 20V
2.4V @ 8mA (Typ)
430nC @ 20V
9000pF @ 700V
690W (Tc)
-40°C ~ 175°C (TJ)
Through Hole
Module
Module
MSCSM120DDUM31CTBL2NG
Microchip Technology

SIC 4N-CH 1200V 79A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 310W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
79A
31mOhm @ 40A, 20V
2.8V @ 1mA
232nC @ 20V
3020pF @ 1000V
310W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70VR1M10CTPAG
Microchip Technology

SIC 6N-CH 700V 238A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
  • Power - Max: 674W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione6
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700V
238A (Tc)
9.5mOhm @ 80A, 20V
2.4V @ 8mA
430nC @ 20V
9000pF @ 700V
674W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM170AM45CT1AG
Microchip Technology

SIC 2N-CH 1700V 64A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
  • Power - Max: 319W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1700V (1.7kV)
64A (Tc)
45mOhm @ 30A, 20V
3.2V @ 2.5mA
178nC @ 20V
3300pF @ 1000V
319W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120AM027D3AG
Microchip Technology

SIC 2N-CH 1200V 733A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 27mA
  • Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
  • Power - Max: 2.97kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
733A (Tc)
3.5mOhm @ 360A, 20V
2.8V @ 27mA
2088nC @ 20V
27000pF @ 1000V
2.97kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120TAM16TPAG
Microchip Technology

SIC 6N-CH 1200V 171A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 728W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
171A (Tc)
16mOhm @ 80A, 20V
2.8V @ 6mA
464nC @ 20V
6040pF @ 1000V
728W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70TLM07CAG
Microchip Technology

SIC 4N-CH 700V 349A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
  • Power - Max: 966W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
pacchetto: -
Azione12
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700V
349A (Tc)
6.4mOhm @ 120A, 20V
2.4V @ 12mA
645nC @ 20V
13500pF @ 700V
966W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
MSCSM120HRM163AG
Microchip Technology

SIC 4N-CH 1200V/700V 173A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V
  • Power - Max: 745W (Tc), 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV), 700V
173A (Tc), 124A (Tc)
16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V
2.8V @ 6mA, 2.4V @ 4mA
464nC, 215nC @ 20V
6040pF @ 1000V, 4500pF @ 700V
745W (Tc), 365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM170HRM11NG
Microchip Technology

SIC 4N-CH 1700V/1200V 226A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 226A (Tc), 163A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 10mA, 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V, 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V, 6040pF @ 1000V
  • Power - Max: 1.012kW (Tc), 662W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1700V (1.7kV), 1200V (1.2kV)
226A (Tc), 163A (Tc)
11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
3.2V @ 10mA, 2.8V @ 6mA
712nC @ 20V, 464nC @ 20V
13200pF @ 1000V, 6040pF @ 1000V
1.012kW (Tc), 662W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
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