Pagina 6 - Prodotti Microchip Technology - Transistor - FET, MOSFET - Array | Heisener Electronics
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Prodotti Microchip Technology - Transistor - FET, MOSFET - Array

Record 176
Pagina  6/7
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot TC6215TG-G
Microchip Technology

MOSFET N/P-CH 150V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione91.740
Standard
150V
-
4 Ohm @ 2A, 10V
2V @ 1mA
-
120pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot TC6320TG-G
Microchip Technology

MOSFET N/P-CH 200V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione27.672
Standard
200V
-
7 Ohm @ 1A, 10V
2V @ 1mA
-
110pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
TC6320K6-G
Microchip Technology

MOSFET N/P-CH 200V 8VDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (4x4)
pacchetto: 8-VDFN Exposed Pad
Azione2.064
Standard
200V
-
7 Ohm @ 1A, 10V
2V @ 1mA
-
110pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (4x4)
TC6321T-V/9U
Microchip Technology

MOSFET ARRAY N/P-CH 200V 8VDFN

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VDFN (6x5)
pacchetto: 8-VDFN Exposed Pad
Azione31.644
Logic Level Gate
200V
2A (Ta)
7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V
2V @ 1mA, 2.4V @ 1mA
-
110pF @ 25V, 200pF @ 25V
-
-55°C ~ 175°C
Surface Mount
8-VDFN Exposed Pad
8-VDFN (6x5)
DN2625DK6-G
Microchip Technology

MOSFET 2N-CH 250V 1.1A 8VDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Depletion Mode
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x5)
pacchetto: 8-VDFN Exposed Pad
Azione17.076
Depletion Mode
250V
1.1A
3.5 Ohm @ 1A, 0V
-
7.04nC @ 1.5V
1000pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (5x5)
TC8020K6-G
Microchip Technology

MOSFET 6N/6P-CH 200V 56VQFN

  • FET Type: 6 N and 6 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFQFN Exposed Pad
  • Supplier Device Package: 56-QFN (8x8)
pacchetto: 56-VFQFN Exposed Pad
Azione22.200
Standard
200V
-
8 Ohm @ 1A, 10V
2.4V @ 1mA
-
50pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
56-VFQFN Exposed Pad
56-QFN (8x8)
MSCSM120VR1M16CT3AG
Microchip Technology

SIC 2N-CH 1200V 173A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 745W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
173A (Tc)
16mOhm @ 80A, 20V
2.8V @ 6mA
464nC @ 20V
6040pF @ 1000V
745W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120DUM16T3AG
Microchip Technology

SIC 2N-CH 1200V 173A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 745W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
pacchetto: -
Request a Quote
-
1200V (1.2kV)
173A (Tc)
16mOhm @ 80A, 20V
2.8V @ 2mA
464nC @ 20V
6040pF @ 1000V
745W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MSCSM120AM02T6LIAG
Microchip Technology

SIC 2N-CH 1200V 947A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 36mA
  • Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
  • Power - Max: 3.75kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
947A (Tc)
2.6mOhm @ 480A, 20V
2.8V @ 36mA
2784nC @ 20V
36200pF @ 1000V
3.75kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120HM31T3AG
Microchip Technology

SIC 4N-CH 1200V 89A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 395W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
89A (Tc)
31mOhm @ 40A, 20V
2.8V @ 3mA
232nC @ 20V
3020pF @ 1000V
395W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120DHM31CTBL2NG
Microchip Technology

SIC 2N-CH 1200V 79A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 310W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
79A
31mOhm @ 40A, 20V
2.8V @ 1mA
232nC @ 20V
3020pF @ 1000V
310W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120HRM052NG
Microchip Technology

SIC 4N-CH 1200V/700V 472A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
  • Current - Continuous Drain (Id) @ 25°C: 472A (Tc), 442A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 18mA, 2.4V @ 16mA
  • Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, 860nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, 18000pF @ 700V
  • Power - Max: 1.846kW (Tc), 1.161kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV), 700V
472A (Tc), 442A (Tc)
5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V
2.8V @ 18mA, 2.4V @ 16mA
1392nC @ 20V, 860nC @ 20V
18100pF @ 1000V, 18000pF @ 700V
1.846kW (Tc), 1.161kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120VR1M16CTPAG
Microchip Technology

SIC 6N-CH 1200V 171A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 728W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
171A (Tc)
16mOhm @ 80A, 20V
2.8V @ 6mA
464nC @ 20V
6040pF @ 1000V
728W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
APTMC120HRM40CT3AG
Microchip Technology

SIC 2N-CH 1200V 73A SP3

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 12.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
  • Power - Max: 375W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3
pacchetto: -
Request a Quote
-
1200V (1.2kV)
73A (Tc)
34mOhm @ 50A, 20V
3V @ 12.5mA
161nC @ 5V
2788pF @ 1000V
375W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
SP3
MSCSM170DUM23T3AG
Microchip Technology

SIC 2N-CH 1700V 124A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
  • Power - Max: 602W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
pacchetto: -
Request a Quote
-
1700V (1.7kV)
124A (Tc)
22.5mOhm @ 60A, 20V
3.2V @ 5mA
356nC @ 20V
6600pF @ 1000V
602W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MSCSM170AM029T6LIAG
Microchip Technology

SIC MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MSCSM170AM029CT6LIAG
Microchip Technology

SIC 2N-CH 1700V 676A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 676A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.75mOhm @ 360A, 20V
  • Vgs(th) (Max) @ Id: 3.3V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 2136nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 1000V
  • Power - Max: 3kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1700V (1.7kV)
676A (Tc)
3.75mOhm @ 360A, 20V
3.3V @ 30mA
2136nC @ 20V
39600pF @ 1000V
3kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120AM042CT6AG
Microchip Technology

SIC 2N-CH 1200V 495A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
  • Power - Max: 2.031kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
pacchetto: -
Request a Quote
-
1200V (1.2kV)
495A (Tc)
5.2mOhm @ 240A, 20V
2.8V @ 6mA
1392nC @ 20V
18.1pF @ 1000V
2.031kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
MSCSM70AM025D3AG
Microchip Technology

SIC 2N-CH 700V 689A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 24mA
  • Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
  • Power - Max: 1.882kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
700V
689A (Tc)
3.2mOhm @ 240A, 20V
2.4V @ 24mA
1290nC @ 20V
27000pF @ 700V
1.882kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
APTMC120HM17CT3AG
Microchip Technology

SIC 4N-CH 1200V 147A SP3

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 332nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5576pF @ 1000V
  • Power - Max: 750W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3
pacchetto: -
Request a Quote
-
1200V (1.2kV)
147A (Tc)
17mOhm @ 100A, 20V
4V @ 30mA
332nC @ 5V
5576pF @ 1000V
750W
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3
MSCSM120TAM16CTPAG
Microchip Technology

SIC 6N-CH 1200V 171A SP6-P

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 728W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6-P
pacchetto: -
Request a Quote
-
1200V (1.2kV)
171A (Tc)
16mOhm @ 80A, 20V
2.8V @ 2mA
464nC @ 20V
6040pF @ 1000V
728W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6-P
MSCSM120HM16CTBL3NG
Microchip Technology

SIC 4N-CH 1200V 150A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 560W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
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-
1200V (1.2kV)
150A
16mOhm @ 80A, 20V
2.8V @ 2mA
464nC @ 20V
6040pF @ 1000V
560W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCC60VRM99CT3AG
Microchip Technology

MOSFET 600V 19A SP3F

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
pacchetto: -
Request a Quote
-
600V
19A (Tc)
-
-
-
-
-
-
Chassis Mount
Module
SP3F
MSCSM70AM19T1AG
Microchip Technology

SIC 2N-CH 700V 124A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
  • Power - Max: 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
700V
124A (Tc)
19mOhm @ 40A, 20V
2.4V @ 4mA
215nC @ 20V
4500pF @ 700V
365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM170TAM23CTPAG
Microchip Technology

SIC 6N-CH 1700V 122A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
  • Power - Max: 588W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione15
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1700V (1.7kV)
122A (Tc)
22.5mOhm @ 60A, 20V
3.2V @ 5mA
356nC @ 20V
6600pF @ 1000V
588W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70AM10T3AG
Microchip Technology

SIC 2N-CH 700V 241A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
  • Power - Max: 690W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione30
-
700V
241A (Tc)
9.5mOhm @ 80A, 20V
2.4V @ 8mA
430nC @ 20V
9000pF @ 700V
690W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120DUM31TBL1NG
Microchip Technology

SIC 2N-CH 1200V 79A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 310W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
79A
31mOhm @ 40A, 20V
2.8V @ 3mA
232nC @ 20V
3020pF @ 1000V
310W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70AM025T6LIAG
Microchip Technology

SIC 2N-CH 700V 689A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 24mA
  • Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
  • Power - Max: 1.882kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
700V
689A (Tc)
3.2mOhm @ 240A, 20V
2.4V @ 24mA
1290nC @ 20V
27000pF @ 700V
1.882kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-