Pagina 6 - Prodotti Microsemi Corporation - Diodi - Raddrizzatori - Singoli

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANS1N6640	Microsemi Corporation	DIODE GEN PURP 50V 300MA DO204AH Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AH, DO-35, Axial	Azione10.272	50V	300mA	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
JANS1N6642	Microsemi Corporation	DIODE GEN PURP 75V 300MA DO204AH Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AH, DO-35, Axial	Azione17.220	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 75V	5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
JANS1N5806US	Microsemi Corporation	DIODE GEN PURP 150V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: SQ-MELF, A	Azione18.864	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANS1N5806	Microsemi Corporation	DIODE GEN PURP 150V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: A, Axial	Azione15.240	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
UES702	Microsemi Corporation	DIODE GEN PURP 100V 25A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 950mV @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 20µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-203AA, DO-4, Stud	Azione6.504	100V	25A	950mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 100V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 175°C
1N5824	Microsemi Corporation	DIODE SCHOTTKY 5A 30V TOPHAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 370mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 125°C	pacchetto: Axial	Azione2.040.000	30V	5A	370mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 30V	-	Through Hole	Axial	Axial	-65°C ~ 125°C
JANTX1N4500	Microsemi Corporation	DIODE GEN PURP 80V DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AH, DO-35, Axial	Azione14.886	80V	-	1.1V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	100nA @ 75V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JANTX1N5711-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 33mA Voltage - Forward (Vf) (Max) @ If: 410mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-204AH, DO-35, Axial	Azione16.716	70V	33mA	410mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
JANTX1N5819-1	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C	pacchetto: DO-204AL, DO-41, Axial	Azione18.816	45V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
JANTX1N6626US	Microsemi Corporation	DIODE GEN PURP 200V 1.75A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SQ-MELF, E	Azione15.072	200V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	2µA @ 200V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JANTX1N5190	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 2µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: B, Axial	Azione22.008	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	2µA @ 600V	-	Through Hole	B, Axial	-	-
JANTXV1N5553	Microsemi Corporation	DIODE GEN PURP 800V 5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: B, Axial	Azione7.656	800V	5A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N5811US	Microsemi Corporation	DIODE GEN PURP 150V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: SQ-MELF, B	Azione23.988	150V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N6622US	Microsemi Corporation	DIODE GEN PURP 660V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 660V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SQ-MELF, A	Azione7.884	660V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 660V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
1N6621US	Microsemi Corporation	DIODE GEN PURP 440V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 440V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 440V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SQ-MELF, A	Azione8.076	440V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 440V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
JANTX1N5806	Microsemi Corporation	DIODE GEN PURP 150V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: A, Axial	Azione18.348	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5614US	Microsemi Corporation	DIODE GEN PURP 200V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: SQ-MELF, A	Azione19.086	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JANTX1N5711UR-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 33mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 100V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-213AA	Azione4.512	70V	33mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 100V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
1N6622	Microsemi Corporation	DIODE GEN PURP 600V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: A, Axial	Azione7.620	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	500nA @ 600V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 150°C
JANTX1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: 35pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: A, Axial	Azione20.196	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: 45pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: A, Axial	Azione30.390	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	A-PAK	-65°C ~ 175°C
JANTX1N4246	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: A, Axial	Azione7.248	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5811TR	Microsemi Corporation	DIODE GEN PURP 150V 6A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: B, Axial	Azione3.792	150V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5806TR	Microsemi Corporation	DIODE GEN PURP 150V 2.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: A, Axial	Azione3.872	150V	2.5A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 175°C
JANTX1N4153-1	Microsemi Corporation	DIODE GEN PURP 50V 150MA DO204AH Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AH, DO-35, Axial	Azione14.514	50V	150mA	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
JANTX1N3595-1	Microsemi Corporation	DIODE GEN PURP 125V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AH, DO-35, Axial	Azione7.632	125V	150mA	920mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JAN1N4454UR-1	Microsemi Corporation	DIODE GEN PURP 50V 4A DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-213AA	Azione37.944	50V	4A	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100nA @ 50V	-	Surface Mount	DO-213AA	DO-213AA	-55°C ~ 175°C
UPS840/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 8A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 450mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: DO-216AA	Azione600.000	40V	8A	450mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C

JANS1N6640

Microsemi Corporation

DIODE GEN PURP 50V 300MA DO204AH

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AH, DO-35, Axial

Azione10.272

50V

300mA

1V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 50V

-

Through Hole

DO-204AH, DO-35, Axial

-

-65°C ~ 175°C

JANS1N6642

Microsemi Corporation

DIODE GEN PURP 75V 300MA DO204AH

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AH, DO-35, Axial

Azione17.220

75V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

5ns

500nA @ 75V

5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

-

-65°C ~ 175°C

JANS1N5806US

Microsemi Corporation

DIODE GEN PURP 150V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: SQ-MELF, A

Azione18.864

150V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 150V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

JANS1N5806

Microsemi Corporation

DIODE GEN PURP 150V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: A, Axial

Azione15.240

150V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 150V

25pF @ 10V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

UES702

Microsemi Corporation

DIODE GEN PURP 100V 25A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 20µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-203AA, DO-4, Stud

Azione6.504

100V

25A

950mV @ 25A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

20µA @ 100V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 175°C

1N5824

Microsemi Corporation

DIODE SCHOTTKY 5A 30V TOPHAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 370mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: Axial

Azione2.040.000

30V

5A

370mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 30V

-

Through Hole

Axial

-65°C ~ 125°C

JANTX1N4500

Microsemi Corporation

DIODE GEN PURP 80V DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AH, DO-35, Axial

Azione14.886

80V

-

1.1V @ 300mA

Fast Recovery =< 500ns, > 200mA (Io)

6ns

100nA @ 75V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

JANTX1N5711-1

Microsemi Corporation

DIODE SCHOTTKY 70V 33MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 33mA
Voltage - Forward (Vf) (Max) @ If: 410mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-204AH, DO-35, Axial

Azione16.716

70V

33mA

410mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

-

200nA @ 50V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 150°C

JANTX1N5819-1

Microsemi Corporation

DIODE SCHOTTKY 45V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: DO-204AL, DO-41, Axial

Azione18.816

45V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

70pF @ 5V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 125°C

JANTX1N6626US

Microsemi Corporation

DIODE GEN PURP 200V 1.75A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SQ-MELF, E

Azione15.072

200V

1.75A

1.35V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

2µA @ 200V

-

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 150°C

JANTX1N5190

Microsemi Corporation

DIODE GEN PURP 600V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 2µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: B, Axial

Azione22.008

600V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

2µA @ 600V

-

Through Hole

B, Axial

-

JANTXV1N5553

Microsemi Corporation

DIODE GEN PURP 800V 5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: B, Axial

Azione7.656

800V

5A

1.3V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 800V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

JANTX1N5811US

Microsemi Corporation

DIODE GEN PURP 150V 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: SQ-MELF, B

Azione23.988

150V

3A

875mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 150V

60pF @ 10V, 1MHz

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

1N6622US

Microsemi Corporation

DIODE GEN PURP 660V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 660V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SQ-MELF, A

Azione7.884

660V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 660V

10pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

-65°C ~ 150°C

1N6621US

Microsemi Corporation

DIODE GEN PURP 440V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 440V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 440V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SQ-MELF, A

Azione8.076

440V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 440V

10pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

-65°C ~ 150°C

JANTX1N5806

Microsemi Corporation

DIODE GEN PURP 150V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: A, Axial

Azione18.348

150V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 150V

25pF @ 10V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

JANTX1N5614US

Microsemi Corporation

DIODE GEN PURP 200V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: SQ-MELF, A

Azione19.086

200V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 200V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 200°C

JANTX1N5711UR-1

Microsemi Corporation

DIODE SCHOTTKY 70V 33MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 33mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 100V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-213AA

Azione4.512

70V

33mA

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

-

200nA @ 100V

2pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 150°C

1N6622

Microsemi Corporation

DIODE GEN PURP 600V 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: A, Axial

Azione7.620

600V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

500nA @ 600V

-

Through Hole

A, Axial

A-PAK

-65°C ~ 150°C

JANTX1N5617

Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: A, Axial

Azione20.196

400V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 400V

35pF @ 12V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

JANTX1N5615

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: A, Axial

Azione30.390

200V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 200V

45pF @ 12V, 1MHz

Through Hole

A, Axial

A-PAK

-65°C ~ 175°C

JANTX1N4246

Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: A, Axial

Azione7.248

400V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

1µA @ 400V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

1N5811TR

Microsemi Corporation

DIODE GEN PURP 150V 6A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: B, Axial

Azione3.792

150V

6A

875mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 150V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

1N5806TR

Microsemi Corporation

DIODE GEN PURP 150V 2.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: A, Axial

Azione3.872

150V

2.5A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 150V

-

Through Hole

A, Axial

A-PAK

-65°C ~ 175°C

JANTX1N4153-1

Microsemi Corporation

DIODE GEN PURP 50V 150MA DO204AH

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AH, DO-35, Axial

Azione14.514

50V

150mA

880mV @ 20mA

Small Signal =< 200mA (Io), Any Speed

4ns

50nA @ 50V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

-

-65°C ~ 175°C

JANTX1N3595-1

Microsemi Corporation

DIODE GEN PURP 125V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 1nA @ 125V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AH, DO-35, Axial

Azione7.632

125V

150mA

920mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

3µs

1nA @ 125V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

JAN1N4454UR-1

Microsemi Corporation

DIODE GEN PURP 50V 4A DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-213AA

Azione37.944

50V

4A

1V @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100nA @ 50V

-

Surface Mount

DO-213AA

-55°C ~ 175°C

UPS840/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 8A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: DO-216AA

Azione600.000

40V

8A

450mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 40V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C