Pagina 8 - Prodotti Microsemi Corporation - Diodi - Raddrizzatori - Singoli

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTX1N3595US	Microsemi Corporation	DIODE GEN PURP 200A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SQ-MELF, B	Azione6.112	-	200A (DC)	1V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	3µs	1nA @ 125V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
1N6628US	Microsemi Corporation	DIODE GEN PURP 660V 1.75A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 660V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SQ-MELF, A	Azione7.376	660V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 660V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
JANTXV1N5616	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: A, Axial	Azione6.560	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTXV1N5550	Microsemi Corporation	DIODE GEN PURP 200V 5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: B, Axial	Azione6.720	200V	5A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTXV1N5622	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: A, Axial	Azione5.104	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTX1N5419	Microsemi Corporation	DIODE GEN PURP 500V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 1µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: B, Axial	Azione6.048	500V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 500V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N5802	Microsemi Corporation	DIODE GEN PURP 50V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: A, Axial	Azione6.608	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5417US	Microsemi Corporation	DIODE GEN PURP 200V 3A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: E-MELF Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: E-MELF	Azione6.096	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
1N5553US	Microsemi Corporation	DIODE GEN PURP 800V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: SQ-MELF, B	Azione7.032	800V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JANTX1N4248	Microsemi Corporation	DIODE GEN PURP 800V 1A E3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: - Package / Case: E3 Supplier Device Package: E3 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: E3	Azione6.228	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 800V	-	-	E3	E3	-65°C ~ 175°C
CDLL5195	Microsemi Corporation	DIODE GEN PURP 180V 200MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 180V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-213AA	Azione7.440	180V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100µA @ 180V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
JAN1N5419	Microsemi Corporation	DIODE GEN PURP 500V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 1µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: B, Axial	Azione8.292	500V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 500V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N5711-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 33mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 70V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-204AH, DO-35, Axial	Azione9.012	70V	33mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 70V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
JANTX1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: A, Axial	Azione5.744	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JAN1N5619	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: A, Axial	Azione7.776	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
APT60D40BG	Microsemi Corporation	DIODE GEN PURP 400V 60A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 37ns Current - Reverse Leakage @ Vr: 250µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-247-2	Azione5.792	400V	60A	1.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	37ns	250µA @ 400V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT60DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 60A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 255ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-247-2	Azione6.264	1000V	60A	3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	255ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT30D20BG	Microsemi Corporation	DIODE GEN PURP 200V 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24ns Current - Reverse Leakage @ Vr: 250µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-247-2	Azione10.632	200V	30A	1.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	24ns	250µA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT30DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.3V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-247-2	Azione49.356	1200V	30A	3.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	320ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT15DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 15A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 240ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-247-3	Azione31.800	1200V	15A	3.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	240ns	100µA @ 1200V	-	Through Hole	TO-247-3	TO-247 [B]	-55°C ~ 175°C
APT15DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 15A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 235ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-247-3	Azione3.840	1000V	15A	3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	235ns	100µA @ 1000V	-	Through Hole	TO-247-3	TO-247 [B]	-55°C ~ 175°C
APT15D120KG	Microsemi Corporation	DIODE GEN PURP 1.2KV 15A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 260ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-220-3	Azione6.176	1200V	15A	2.5V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	260ns	250µA @ 1200V	-	Through Hole	TO-220-3	TO-220 [K]	-55°C ~ 175°C
APT15DQ120KG	Microsemi Corporation	DIODE GEN PURP 1.2KV 15A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 240ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-220-2	Azione51.228	1200V	15A	3.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	240ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
APT15DQ100KG	Microsemi Corporation	DIODE GEN PURP 1KV 15A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 235ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-220-3	Azione9.024	1000V	15A	3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	235ns	100µA @ 1000V	-	Through Hole	TO-220-3	TO-220 [K]	-55°C ~ 175°C
APTDF500U40G	Microsemi Corporation	DIODE MODULE 400V 500A LP4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 500A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 2.5mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: LP4 Supplier Device Package: LP4 Operating Temperature - Junction: -	pacchetto: LP4	Azione7.056	400V	500A	1.5V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	2.5mA @ 400V	-	Chassis Mount	LP4	LP4	-
JANTX1N5712UR-1	Microsemi Corporation	DIODE SCHOTTKY 20V 75MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 75mA Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150nA @ 16V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-213AA	Azione4.688	20V	75mA	1V @ 35mA	Small Signal =< 200mA (Io), Any Speed	-	150nA @ 16V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
UES1302	Microsemi Corporation	DIODE GEN PURP 100V 6A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 925mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: Axial	Azione7.888	100V	6A	925mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	30ns	5µA @ 100V	-	Through Hole	Axial	Axial	-55°C ~ 175°C
APT30SCD120S	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 99A D3PAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 99A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 600µA @ 1200V Capacitance @ Vr, F: 2100pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Azione5.616	1200V	99A (DC)	1.8V @ 30A	No Recovery Time > 500mA (Io)	0ns	600µA @ 1200V	2100pF @ 0V, 1MHz	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	D3Pak	-55°C ~ 150°C

JANTX1N3595US

Microsemi Corporation

DIODE GEN PURP 200A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 1nA @ 125V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SQ-MELF, B

Azione6.112

-

200A (DC)

1V @ 200mA

Standard Recovery >500ns, > 200mA (Io)

3µs

1nA @ 125V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C

1N6628US

Microsemi Corporation

DIODE GEN PURP 660V 1.75A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 660V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SQ-MELF, A

Azione7.376

660V

1.75A

1.35V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 660V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

-65°C ~ 150°C

JANTXV1N5616

Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: A, Axial

Azione6.560

400V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 400V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

JANTXV1N5550

Microsemi Corporation

DIODE GEN PURP 200V 5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: B, Axial

Azione6.720

200V

5A

1.2V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 200V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

JANTXV1N5622

Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: A, Axial

Azione5.104

1000V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 1000V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

JANTX1N5419

Microsemi Corporation

DIODE GEN PURP 500V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 1µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: B, Axial

Azione6.048

500V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

1µA @ 500V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

JANTX1N5802

Microsemi Corporation

DIODE GEN PURP 50V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: A, Axial

Azione6.608

50V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 50V

25pF @ 10V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

1N5417US

Microsemi Corporation

DIODE GEN PURP 200V 3A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: E-MELF

Azione6.096

200V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 200V

-

Surface Mount

E-MELF

D-5B

-65°C ~ 175°C

1N5553US

Microsemi Corporation

DIODE GEN PURP 800V 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: SQ-MELF, B

Azione7.032

800V

3A

1.2V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 800V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

JANTX1N4248

Microsemi Corporation

DIODE GEN PURP 800V 1A E3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: E3
Supplier Device Package: E3
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: E3

Azione6.228

800V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

1µA @ 800V

-

E3

-65°C ~ 175°C

CDLL5195

Microsemi Corporation

DIODE GEN PURP 180V 200MA DO213

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 180V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-213AA

Azione7.440

180V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

100µA @ 180V

-

Surface Mount

DO-213AA

-65°C ~ 175°C

JAN1N5419

Microsemi Corporation

DIODE GEN PURP 500V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 1µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: B, Axial

Azione8.292

500V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

1µA @ 500V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

JAN1N5711-1

Microsemi Corporation

DIODE SCHOTTKY 70V 33MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 33mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 70V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-204AH, DO-35, Axial

Azione9.012

70V

33mA

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

-

200nA @ 70V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 150°C

JANTX1N5614

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: A, Axial

Azione5.744

200V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 200V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

JAN1N5619

Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: A, Axial

Azione7.776

600V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

500nA @ 800V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

APT60D40BG

Microsemi Corporation

DIODE GEN PURP 400V 60A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37ns
Current - Reverse Leakage @ Vr: 250µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-2

Azione5.792

400V

60A

1.5V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

37ns

250µA @ 400V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

APT60DQ100BG

Microsemi Corporation

DIODE GEN PURP 1KV 60A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 3V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-2

Azione6.264

1000V

60A

3V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

255ns

100µA @ 1000V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

APT30D20BG

Microsemi Corporation

DIODE GEN PURP 200V 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24ns
Current - Reverse Leakage @ Vr: 250µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-2

Azione10.632

200V

30A

1.3V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

24ns

250µA @ 200V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

APT30DQ120BG

Microsemi Corporation

DIODE GEN PURP 1.2KV 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-2

Azione49.356

1200V

30A

3.3V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

320ns

100µA @ 1200V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

APT15DQ120BG

Microsemi Corporation

DIODE GEN PURP 1.2KV 15A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-3

Azione31.800

1200V

15A

3.3V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

240ns

100µA @ 1200V

-

Through Hole

TO-247-3

TO-247 [B]

-55°C ~ 175°C

APT15DQ100BG

Microsemi Corporation

DIODE GEN PURP 1KV 15A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-3

Azione3.840

1000V

15A

3V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

235ns

100µA @ 1000V

-

Through Hole

TO-247-3

TO-247 [B]

-55°C ~ 175°C

APT15D120KG

Microsemi Corporation

DIODE GEN PURP 1.2KV 15A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-220-3

Azione6.176

1200V

15A

2.5V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

260ns

250µA @ 1200V

-

Through Hole

TO-220-3

TO-220 [K]

-55°C ~ 175°C

APT15DQ120KG

Microsemi Corporation

DIODE GEN PURP 1.2KV 15A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-220-2

Azione51.228

1200V

15A

3.3V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

240ns

100µA @ 1200V

-

Through Hole

TO-220-2

TO-220 [K]

-55°C ~ 175°C

APT15DQ100KG

Microsemi Corporation

DIODE GEN PURP 1KV 15A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-220-3

Azione9.024

1000V

15A

3V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

235ns

100µA @ 1000V

-

Through Hole

TO-220-3

TO-220 [K]

-55°C ~ 175°C

APTDF500U40G

Microsemi Corporation

DIODE MODULE 400V 500A LP4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 500A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 500A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 2.5mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: LP4
Operating Temperature - Junction: -

pacchetto: LP4

Azione7.056

400V

500A

1.5V @ 500A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

2.5mA @ 400V

-

Chassis Mount

LP4

-

JANTX1N5712UR-1

Microsemi Corporation

DIODE SCHOTTKY 20V 75MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 75mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150nA @ 16V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-213AA

Azione4.688

20V

75mA

1V @ 35mA

Small Signal =< 200mA (Io), Any Speed

-

150nA @ 16V

2pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 150°C

UES1302

Microsemi Corporation

DIODE GEN PURP 100V 6A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 925mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: Axial

Azione7.888

100V

6A

925mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

30ns

5µA @ 100V

-

Through Hole

Axial

-55°C ~ 175°C

APT30SCD120S

Microsemi Corporation

DIODE SCHOTTKY 1.2KV 99A D3PAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 99A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 600µA @ 1200V
Capacitance @ Vr, F: 2100pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Azione5.616

1200V

99A (DC)

1.8V @ 30A

No Recovery Time > 500mA (Io)

0ns

600µA @ 1200V

2100pF @ 0V, 1MHz

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

D3Pak

-55°C ~ 150°C