Pagina 6 - Prodotti Microsemi Corporation - Transistor - FET, MOSFET - Array

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APTMC170AM30CT1AG	Microsemi Corporation	MOSFET 2N-CH 1700V 106A SP1 FET Type: 2 N Channel (Phase Leg) FET Feature: Standard Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 106A Rds On (Max) @ Id, Vgs: 30 mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.3V @ 5mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 380nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 1000V Power - Max: 700W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione5.616	Standard	1700V (1.7kV)	106A	30 mOhm @ 100A, 20V	2.3V @ 5mA (Typ)	380nC @ 20V	6160pF @ 1000V	700W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTMC120AM12CT3AG	Microsemi Corporation	MOSFET 2N-CH 1200V 220A SP3F FET Type: 2 N Channel (Phase Leg) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 220A Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V Power - Max: 925W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione5.568	Standard	1200V (1.2kV)	220A	12 mOhm @ 150A, 20V	2.4V @ 30mA (Typ)	483nC @ 20V	8400pF @ 1000V	925W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTSM120AM08CT6AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 3V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2300W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione5.024	Silicon Carbide (SiC)	1200V (1.2kV)	370A (Tc)	10 mOhm @ 200A, 20V	3V @ 10mA	1360nC @ 20V	-	2300W	-40°C ~ 175°C (TJ)	Chassis Mount	SP6	SP6
APTSM120AM09CD3AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	pacchetto: Module	Azione5.776	Silicon Carbide (SiC)	1200V (1.2kV)	337A (Tc)	11 mOhm @ 180A, 20V	3V @ 9mA	1224nC @ 20V	23000pF @ 1000V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
APTSM120TAM33CTPAG	Microsemi Corporation	POWER MODULE - SIC FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 408nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 7680pF @ 1000V Power - Max: 714W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione6.992	Silicon Carbide (SiC)	1200V (1.2kV)	112A (Tc)	33 mOhm @ 60A, 20V	3V @ 3mA	408nC @ 20V	7680pF @ 1000V	714W	-40°C ~ 175°C (TJ)	Chassis Mount	SP6	SP6
APTMC170AM60CT1AG	Microsemi Corporation	MOSFET 2N-CH 1700V 53A SP1 FET Type: 2 N Channel (Phase Leg) FET Feature: Standard Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 53A Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 2.3V @ 2.5mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 190nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 1000V Power - Max: 350W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione5.152	Standard	1700V (1.7kV)	53A	60 mOhm @ 50A, 20V	2.3V @ 2.5mA (Typ)	190nC @ 20V	3080pF @ 1000V	350W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTMC120AM20CT1AG	Microsemi Corporation	MOSFET 2N-CH 1200V 143A SP1 FET Type: 2 N Channel (Phase Leg) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 143A Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.3V @ 2mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 360nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 1000V Power - Max: 600W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione2.944	Standard	1200V (1.2kV)	143A	17 mOhm @ 100A, 20V	2.3V @ 2mA (Typ)	360nC @ 20V	5960pF @ 1000V	600W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTSM120AM14CD3AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V Power - Max: 2140W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	pacchetto: Module	Azione7.584	Silicon Carbide (SiC)	1200V (1.2kV)	337A (Tc)	11 mOhm @ 180A, 20V	3V @ 9mA	1224nC @ 20V	23000pF @ 1000V	2140W	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
APTMC60TLM55CT3AG	Microsemi Corporation	MOSFET 4N-CH 1200V 55A SP3F FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione7.584	Standard	1200V (1.2kV)	55A	49 mOhm @ 40A, 20V	2.2V @ 2mA (Typ)	98nC @ 20V	1900pF @ 1000V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM100TA35SCTPG	Microsemi Corporation	MOSFET 6N-CH 1000V 22A SP6P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6-P	pacchetto: Module	Azione3.600	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP6-P
APTSM120AM25CT3AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 148A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 3V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V Power - Max: 937W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione4.944	Silicon Carbide (SiC)	1200V (1.2kV)	148A (Tc)	25 mOhm @ 80A, 20V	3V @ 4mA	544nC @ 20V	10200pF @ 1000V	937W	-40°C ~ 175°C (TJ)	Chassis Mount	SP3	SP3
APTC60TAM21SCTPAG	Microsemi Corporation	MOSFET 6N-CH 600V 116A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 116A Rds On (Max) @ Id, Vgs: 21 mOhm @ 88A, 10V Vgs(th) (Max) @ Id: 3.6V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 100V Power - Max: 625W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6-P	pacchetto: Module	Azione6.256	Standard	600V	116A	21 mOhm @ 88A, 10V	3.6V @ 6mA	580nC @ 10V	13000pF @ 100V	625W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP6-P
APTC60TAM24TPG	Microsemi Corporation	MOSFET 6N-CH 600V 95A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione3.264	Super Junction	600V	95A	24 mOhm @ 47.5A, 10V	3.9V @ 5mA	300nC @ 10V	14400pF @ 25V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTM120A15FG	Microsemi Corporation	MOSFET 2N-CH 1200V 60A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione7.808	Standard	1200V (1.2kV)	60A	175 mOhm @ 30A, 10V	5V @ 10mA	748nC @ 10V	20600pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50AM24SCG	Microsemi Corporation	MOSFET 2N-CH 500V 150A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione3.120	Silicon Carbide (SiC)	500V	150A	28 mOhm @ 75A, 10V	5V @ 6mA	434nC @ 10V	19600pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM100AM90FG	Microsemi Corporation	MOSFET 2N-CH 1000V 78A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione5.520	Standard	1000V (1kV)	78A	105 mOhm @ 39A, 10V	5V @ 10mA	744nC @ 10V	20700pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM100H18FG	Microsemi Corporation	MOSFET 4N-CH 1000V 43A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 43A Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione7.584	Standard	1000V (1kV)	43A	210 mOhm @ 21.5A, 10V	5V @ 5mA	372nC @ 10V	10400pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTC90TAM60TPG	Microsemi Corporation	MOSFET 6N-CH 900V 59A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione7.648	Super Junction	900V	59A	60 mOhm @ 52A, 10V	3.5V @ 6mA	540nC @ 10V	13600pF @ 100V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTM50AM17FG	Microsemi Corporation	MOSFET 2N-CH 500V 180A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione7.232	Standard	500V	180A	20 mOhm @ 90A, 10V	5V @ 10mA	560nC @ 10V	28000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50HM35FG	Microsemi Corporation	MOSFET 4N-CH 500V 99A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione7.392	Standard	500V	99A	39 mOhm @ 49.5A, 10V	5V @ 5mA	280nC @ 10V	14000pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM120DU15G	Microsemi Corporation	MOSFET 2N-CH 1200V 60A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione6.656	Standard	1200V (1.2kV)	60A	175 mOhm @ 30A, 10V	5V @ 10mA	748nC @ 10V	20600pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM20HM08FG	Microsemi Corporation	MOSFET 4N-CH 200V 208A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione5.248	Standard	200V	208A	10 mOhm @ 104A, 10V	5V @ 5mA	280nC @ 10V	14400pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTMC60TL11CT3AG	Microsemi Corporation	MOSFET 4N-CH 1200V 28A SP3 FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Power - Max: 125W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione3.232	Standard	1200V (1.2kV)	28A	98 mOhm @ 20A, 20V	2.2V @ 1mA	49nC @ 20V	950pF @ 1000V	125W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM100DUM90G	Microsemi Corporation	MOSFET 2N-CH 1000V 78A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione2.688	Standard	1000V (1kV)	78A	105 mOhm @ 39A, 10V	5V @ 10mA	744nC @ 10V	20700pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTML1002U60R020T3AG	Microsemi Corporation	MOSFET 2N-CH 1000V 20A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 720 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Power - Max: 520W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione7.040	Standard	1000V (1kV)	20A	720 mOhm @ 10A, 10V	4V @ 2.5mA	-	6000pF @ 25V	520W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM50DUM17G	Microsemi Corporation	MOSFET 2N-CH 500V 180A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione6.032	Standard	500V	180A	20 mOhm @ 90A, 10V	5V @ 10mA	560nC @ 10V	28000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50AM19FG	Microsemi Corporation	MOSFET 2N-CH 500V 163A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 163A Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V Power - Max: 1136W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione6.416	Standard	500V	163A	22.5 mOhm @ 81.5A, 10V	5V @ 10mA	492nC @ 10V	22400pF @ 25V	1136W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50HM38FG	Microsemi Corporation	MOSFET 4N-CH 500V 90A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione2.592	Standard	500V	90A	45 mOhm @ 45A, 10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6

APTMC170AM30CT1AG

Microsemi Corporation

MOSFET 2N-CH 1700V 106A SP1

FET Type: 2 N Channel (Phase Leg)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 106A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 1000V
Power - Max: 700W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione5.616

Standard

1700V (1.7kV)

106A

30 mOhm @ 100A, 20V

2.3V @ 5mA (Typ)

380nC @ 20V

6160pF @ 1000V

700W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTMC120AM12CT3AG

Microsemi Corporation

MOSFET 2N-CH 1200V 220A SP3F

FET Type: 2 N Channel (Phase Leg)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 220A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
Power - Max: 925W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione5.568

Standard

1200V (1.2kV)

220A

12 mOhm @ 150A, 20V

2.4V @ 30mA (Typ)

483nC @ 20V

8400pF @ 1000V

925W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTSM120AM08CT6AG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V
Vgs(th) (Max) @ Id: 3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2300W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione5.024

Silicon Carbide (SiC)

1200V (1.2kV)

370A (Tc)

10 mOhm @ 200A, 20V

3V @ 10mA

1360nC @ 20V

-

2300W

-40°C ~ 175°C (TJ)

Chassis Mount

SP6

APTSM120AM09CD3AG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 2 N-Channel (Dual)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

pacchetto: Module

Azione5.776

Silicon Carbide (SiC)

1200V (1.2kV)

337A (Tc)

11 mOhm @ 180A, 20V

3V @ 9mA

1224nC @ 20V

23000pF @ 1000V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

APTSM120TAM33CTPAG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 3V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 408nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 7680pF @ 1000V
Power - Max: 714W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione6.992

Silicon Carbide (SiC)

1200V (1.2kV)

112A (Tc)

33 mOhm @ 60A, 20V

3V @ 3mA

408nC @ 20V

7680pF @ 1000V

714W

-40°C ~ 175°C (TJ)

Chassis Mount

SP6

APTMC170AM60CT1AG

Microsemi Corporation

MOSFET 2N-CH 1700V 53A SP1

FET Type: 2 N Channel (Phase Leg)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 53A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 1000V
Power - Max: 350W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione5.152

Standard

1700V (1.7kV)

53A

60 mOhm @ 50A, 20V

2.3V @ 2.5mA (Typ)

190nC @ 20V

3080pF @ 1000V

350W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTMC120AM20CT1AG

Microsemi Corporation

MOSFET 2N-CH 1200V 143A SP1

FET Type: 2 N Channel (Phase Leg)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 143A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 1000V
Power - Max: 600W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione2.944

Standard

1200V (1.2kV)

143A

17 mOhm @ 100A, 20V

2.3V @ 2mA (Typ)

360nC @ 20V

5960pF @ 1000V

600W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTSM120AM14CD3AG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
Power - Max: 2140W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

pacchetto: Module

Azione7.584

Silicon Carbide (SiC)

1200V (1.2kV)

337A (Tc)

11 mOhm @ 180A, 20V

3V @ 9mA

1224nC @ 20V

23000pF @ 1000V

2140W

-40°C ~ 175°C (TJ)

Chassis Mount

Module

APTMC60TLM55CT3AG

Microsemi Corporation

MOSFET 4N-CH 1200V 55A SP3F

FET Type: 4 N-Channel (Three Level Inverter)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione7.584

Standard

1200V (1.2kV)

55A

49 mOhm @ 40A, 20V

2.2V @ 2mA (Typ)

98nC @ 20V

1900pF @ 1000V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM100TA35SCTPG

Microsemi Corporation

MOSFET 6N-CH 1000V 22A SP6P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6-P

pacchetto: Module

Azione3.600

Standard

1000V (1kV)

22A

420 mOhm @ 11A, 10V

5V @ 2.5mA

186nC @ 10V

5200pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

SP6-P

APTSM120AM25CT3AG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 148A (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 3V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V
Power - Max: 937W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione4.944

Silicon Carbide (SiC)

1200V (1.2kV)

148A (Tc)

25 mOhm @ 80A, 20V

3V @ 4mA

544nC @ 20V

10200pF @ 1000V

937W

-40°C ~ 175°C (TJ)

Chassis Mount

SP3

APTC60TAM21SCTPAG

Microsemi Corporation

MOSFET 6N-CH 600V 116A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 116A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 88A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 100V
Power - Max: 625W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6-P

pacchetto: Module

Azione6.256

Standard

600V

116A

21 mOhm @ 88A, 10V

3.6V @ 6mA

580nC @ 10V

13000pF @ 100V

625W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

SP6-P

APTC60TAM24TPG

Microsemi Corporation

MOSFET 6N-CH 600V 95A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione3.264

Super Junction

600V

95A

24 mOhm @ 47.5A, 10V

3.9V @ 5mA

300nC @ 10V

14400pF @ 25V

462W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTM120A15FG

Microsemi Corporation

MOSFET 2N-CH 1200V 60A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione7.808

Standard

1200V (1.2kV)

60A

175 mOhm @ 30A, 10V

5V @ 10mA

748nC @ 10V

20600pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50AM24SCG

Microsemi Corporation

MOSFET 2N-CH 500V 150A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione3.120

Silicon Carbide (SiC)

500V

150A

28 mOhm @ 75A, 10V

5V @ 6mA

434nC @ 10V

19600pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM100AM90FG

Microsemi Corporation

MOSFET 2N-CH 1000V 78A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione5.520

Standard

1000V (1kV)

78A

105 mOhm @ 39A, 10V

5V @ 10mA

744nC @ 10V

20700pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM100H18FG

Microsemi Corporation

MOSFET 4N-CH 1000V 43A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 43A
Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione7.584

Standard

1000V (1kV)

43A

210 mOhm @ 21.5A, 10V

5V @ 5mA

372nC @ 10V

10400pF @ 25V

780W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTC90TAM60TPG

Microsemi Corporation

MOSFET 6N-CH 900V 59A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione7.648

Super Junction

900V

59A

60 mOhm @ 52A, 10V

3.5V @ 6mA

540nC @ 10V

13600pF @ 100V

462W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTM50AM17FG

Microsemi Corporation

MOSFET 2N-CH 500V 180A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione7.232

Standard

500V

180A

20 mOhm @ 90A, 10V

5V @ 10mA

560nC @ 10V

28000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50HM35FG

Microsemi Corporation

MOSFET 4N-CH 500V 99A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione7.392

Standard

500V

99A

39 mOhm @ 49.5A, 10V

5V @ 5mA

280nC @ 10V

14000pF @ 25V

781W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM120DU15G

Microsemi Corporation

MOSFET 2N-CH 1200V 60A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione6.656

Standard

1200V (1.2kV)

60A

175 mOhm @ 30A, 10V

5V @ 10mA

748nC @ 10V

20600pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM20HM08FG

Microsemi Corporation

MOSFET 4N-CH 200V 208A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione5.248

Standard

200V

208A

10 mOhm @ 104A, 10V

5V @ 5mA

280nC @ 10V

14400pF @ 25V

781W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTMC60TL11CT3AG

Microsemi Corporation

MOSFET 4N-CH 1200V 28A SP3

FET Type: 4 N-Channel (Three Level Inverter)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
Power - Max: 125W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione3.232

Standard

1200V (1.2kV)

28A

98 mOhm @ 20A, 20V

2.2V @ 1mA

49nC @ 20V

950pF @ 1000V

125W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM100DUM90G

Microsemi Corporation

MOSFET 2N-CH 1000V 78A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione2.688

Standard

1000V (1kV)

78A

105 mOhm @ 39A, 10V

5V @ 10mA

744nC @ 10V

20700pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTML1002U60R020T3AG

Microsemi Corporation

MOSFET 2N-CH 1000V 20A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 720 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Power - Max: 520W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione7.040

Standard

1000V (1kV)

20A

720 mOhm @ 10A, 10V

4V @ 2.5mA

-

6000pF @ 25V

520W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM50DUM17G

Microsemi Corporation

MOSFET 2N-CH 500V 180A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione6.032

Standard

500V

180A

20 mOhm @ 90A, 10V

5V @ 10mA

560nC @ 10V

28000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50AM19FG

Microsemi Corporation

MOSFET 2N-CH 500V 163A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 163A
Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
Power - Max: 1136W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione6.416

Standard

500V

163A

22.5 mOhm @ 81.5A, 10V

5V @ 10mA

492nC @ 10V

22400pF @ 25V

1136W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50HM38FG

Microsemi Corporation

MOSFET 4N-CH 500V 90A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione2.592

Standard

500V

90A

45 mOhm @ 45A, 10V

5V @ 5mA

246nC @ 10V

11200pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6