Pagina 7 - Prodotti Microsemi Corporation - Transistor - FET, MOSFET - Array

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APTM120H57FTG	Microsemi Corporation	MOSFET 4N-CH 1200V 17A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione6.736	Standard	1200V (1.2kV)	17A	684 mOhm @ 8.5A, 10V	5V @ 2.5mA	187nC @ 10V	5155pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM120H57FT3G	Microsemi Corporation	MOSFET 4N-CH 1200V 17A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione6.080	Standard	1200V (1.2kV)	17A	684 mOhm @ 8.5A, 10V	5V @ 2.5mA	187nC @ 10V	5155pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM120DU29TG	Microsemi Corporation	MOSFET 2N-CH 1200V 34A SP4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 34A Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione2.368	Standard	1200V (1.2kV)	34A	348 mOhm @ 17A, 10V	5V @ 5mA	374nC @ 10V	10300pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM120DSK57T3G	Microsemi Corporation	MOSFET 2N-CH 1200V 17A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione5.488	Standard	1200V (1.2kV)	17A	684 mOhm @ 8.5A, 10V	5V @ 2.5mA	187nC @ 10V	5155pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM120DDA57T3G	Microsemi Corporation	MOSFET 2N-CH 1200V 17A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione3.840	Standard	1200V (1.2kV)	17A	684 mOhm @ 8.5A, 10V	5V @ 2.5mA	187nC @ 10V	5155pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM120A80FT1G	Microsemi Corporation	MOSFET 2N-CH 1200V 14A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 14A Rds On (Max) @ Id, Vgs: 960 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione2.048	Standard	1200V (1.2kV)	14A	960 mOhm @ 12A, 10V	5V @ 2.5mA	260nC @ 10V	6696pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTM10TDUM19PG	Microsemi Corporation	MOSFET 6N-CH 100V 70A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione7.216	Standard	100V	70A	21 mOhm @ 35A, 10V	4V @ 1mA	200nC @ 10V	5100pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTM10HM09FTG	Microsemi Corporation	MOSFET 4N-CH 100V 139A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione6.144	Standard	100V	139A	10 mOhm @ 69.5A, 10V	4V @ 2.5mA	350nC @ 10V	9875pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM10DUM05TG	Microsemi Corporation	MOSFET 2N-CH 100V 278A SP4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 278A Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione7.296	Standard	100V	278A	5 mOhm @ 125A, 10V	4V @ 5mA	700nC @ 10V	20000pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM10DHM09TG	Microsemi Corporation	MOSFET 2N-CH 100V 139A SP4 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione3.760	Standard	100V	139A	10 mOhm @ 69.5A, 10V	4V @ 2.5mA	350nC @ 10V	9875pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM100TDU35PG	Microsemi Corporation	MOSFET 6N-CH 1000V 22A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione3.408	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTM100H80FT1G	Microsemi Corporation	MOSFET 4N-CH 1000V 11A SP1 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 960 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3876pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione2.480	Standard	1000V (1kV)	11A	960 mOhm @ 9A, 10V	5V @ 1mA	150nC @ 10V	3876pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTM100DU18TG	Microsemi Corporation	MOSFET 2N-CH 1000V 43A SP4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 43A Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione3.424	Standard	1000V (1kV)	43A	210 mOhm @ 21.5A, 10V	5V @ 5mA	372nC @ 10V	10400pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM100A46FT1G	Microsemi Corporation	MOSFET 2N-CH 1000V 19A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 19A Rds On (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione3.504	Standard	1000V (1kV)	19A	552 mOhm @ 16A, 10V	5V @ 2.5mA	260nC @ 10V	6800pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTM100A23SCTG	Microsemi Corporation	MOSFET 2N-CH 1000V 36A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione4.480	Silicon Carbide (SiC)	1000V (1kV)	36A	270 mOhm @ 18A, 10V	5V @ 5mA	308nC @ 10V	8700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM100A12STG	Microsemi Corporation	MOSFET 2N-CH 1000V 68A LP8W FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 68A Rds On (Max) @ Id, Vgs: 120 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 616nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17400pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione7.504	Standard	1000V (1kV)	68A	120 mOhm @ 34A, 10V	5V @ 10mA	616nC @ 10V	17400pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM08TDUM04PG	Microsemi Corporation	MOSFET 6N-CH 75V 120A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Power - Max: 138W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione4.048	Standard	75V	120A	4.5 mOhm @ 60A, 10V	4V @ 1mA	153nC @ 10V	4530pF @ 25V	138W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTC80H29T1G	Microsemi Corporation	MOSFET 4N-CH 800V 15A SP1 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Power - Max: 156W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione6.816	Standard	800V	15A	290 mOhm @ 7.5A, 10V	3.9V @ 1mA	90nC @ 10V	2254pF @ 25V	156W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTC80DSK29T3G	Microsemi Corporation	MOSFET 2N-CH 800V 15A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Power - Max: 156W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione4.528	Standard	800V	15A	290 mOhm @ 7.5A, 10V	3.9V @ 1mA	90nC @ 10V	2254pF @ 25V	156W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTC80DDA29T3G	Microsemi Corporation	MOSFET 2N-CH 800V 15A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Power - Max: 156W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione3.088	Standard	800V	15A	290 mOhm @ 7.5A, 10V	3.9V @ 1mA	90nC @ 10V	2254pF @ 25V	156W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTC80A15T1G	Microsemi Corporation	MOSFET 2N-CH 800V 28A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Power - Max: 277W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione7.712	Standard	800V	28A	150 mOhm @ 14A, 10V	3.9V @ 2mA	180nC @ 10V	4507pF @ 25V	277W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTC60DSKM70T3G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione2.816	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTC60DDAM70T3G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione5.104	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTC60AM70T1G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione3.328	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTMC120TAM12CTPAG	Microsemi Corporation	MOSFET 6N-CH 1200V 220A SP6P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 220A Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V Power - Max: 925W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione2.944	Standard	1200V (1.2kV)	220A	12 mOhm @ 150A, 20V	2.4V @ 30mA (Typ)	483nC @ 20V	8400pF @ 1000V	925W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTMC60TLM14CAG	Microsemi Corporation	MOSFET 4N-CH 1200V 219A SP6C FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 219A Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V Power - Max: 925W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione6.992	Standard	1200V (1.2kV)	219A	12 mOhm @ 150A, 20V	2.4V @ 30mA (Typ)	483nC @ 20V	8400pF @ 1000V	925W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTMC120TAM17CTPAG	Microsemi Corporation	MOSFET 6N-CH 1200V 147A SP6P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 147A Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.4V @ 20mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 322nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 1000V Power - Max: 625W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione6.352	Standard	1200V (1.2kV)	147A	17 mOhm @ 100A, 20V	2.4V @ 20mA (Typ)	322nC @ 20V	5600pF @ 1000V	625W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTMC120AM09CT3AG	Microsemi Corporation	MOSFET 2N-CH 1200V 295A SP3F FET Type: 2 N Channel (Phase Leg) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 295A Rds On (Max) @ Id, Vgs: 9 mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 2.4V @ 40mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 644nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione7.888	Standard	1200V (1.2kV)	295A	9 mOhm @ 200A, 20V	2.4V @ 40mA (Typ)	644nC @ 20V	11000pF @ 1000V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3

APTM120H57FTG

Microsemi Corporation

MOSFET 4N-CH 1200V 17A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione6.736

Standard

1200V (1.2kV)

17A

684 mOhm @ 8.5A, 10V

5V @ 2.5mA

187nC @ 10V

5155pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM120H57FT3G

Microsemi Corporation

MOSFET 4N-CH 1200V 17A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione6.080

Standard

1200V (1.2kV)

17A

684 mOhm @ 8.5A, 10V

5V @ 2.5mA

187nC @ 10V

5155pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM120DU29TG

Microsemi Corporation

MOSFET 2N-CH 1200V 34A SP4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione2.368

Standard

1200V (1.2kV)

34A

348 mOhm @ 17A, 10V

5V @ 5mA

374nC @ 10V

10300pF @ 25V

780W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM120DSK57T3G

Microsemi Corporation

MOSFET 2N-CH 1200V 17A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione5.488

Standard

1200V (1.2kV)

17A

684 mOhm @ 8.5A, 10V

5V @ 2.5mA

187nC @ 10V

5155pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM120DDA57T3G

Microsemi Corporation

MOSFET 2N-CH 1200V 17A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione3.840

Standard

1200V (1.2kV)

17A

684 mOhm @ 8.5A, 10V

5V @ 2.5mA

187nC @ 10V

5155pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM120A80FT1G

Microsemi Corporation

MOSFET 2N-CH 1200V 14A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 960 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione2.048

Standard

1200V (1.2kV)

14A

960 mOhm @ 12A, 10V

5V @ 2.5mA

260nC @ 10V

6696pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTM10TDUM19PG

Microsemi Corporation

MOSFET 6N-CH 100V 70A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione7.216

Standard

100V

70A

21 mOhm @ 35A, 10V

4V @ 1mA

200nC @ 10V

5100pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTM10HM09FTG

Microsemi Corporation

MOSFET 4N-CH 100V 139A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione6.144

Standard

100V

139A

10 mOhm @ 69.5A, 10V

4V @ 2.5mA

350nC @ 10V

9875pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM10DUM05TG

Microsemi Corporation

MOSFET 2N-CH 100V 278A SP4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 278A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione7.296

Standard

100V

278A

5 mOhm @ 125A, 10V

4V @ 5mA

700nC @ 10V

20000pF @ 25V

780W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM10DHM09TG

Microsemi Corporation

MOSFET 2N-CH 100V 139A SP4

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione3.760

Standard

100V

139A

10 mOhm @ 69.5A, 10V

4V @ 2.5mA

350nC @ 10V

9875pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM100TDU35PG

Microsemi Corporation

MOSFET 6N-CH 1000V 22A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione3.408

Standard

1000V (1kV)

22A

420 mOhm @ 11A, 10V

5V @ 2.5mA

186nC @ 10V

5200pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTM100H80FT1G

Microsemi Corporation

MOSFET 4N-CH 1000V 11A SP1

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 960 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3876pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione2.480

Standard

1000V (1kV)

11A

960 mOhm @ 9A, 10V

5V @ 1mA

150nC @ 10V

3876pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTM100DU18TG

Microsemi Corporation

MOSFET 2N-CH 1000V 43A SP4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 43A
Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione3.424

Standard

1000V (1kV)

43A

210 mOhm @ 21.5A, 10V

5V @ 5mA

372nC @ 10V

10400pF @ 25V

780W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM100A46FT1G

Microsemi Corporation

MOSFET 2N-CH 1000V 19A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 19A
Rds On (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione3.504

Standard

1000V (1kV)

19A

552 mOhm @ 16A, 10V

5V @ 2.5mA

260nC @ 10V

6800pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTM100A23SCTG

Microsemi Corporation

MOSFET 2N-CH 1000V 36A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione4.480

Silicon Carbide (SiC)

1000V (1kV)

36A

270 mOhm @ 18A, 10V

5V @ 5mA

308nC @ 10V

8700pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM100A12STG

Microsemi Corporation

MOSFET 2N-CH 1000V 68A LP8W

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 616nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 17400pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione7.504

Standard

1000V (1kV)

68A

120 mOhm @ 34A, 10V

5V @ 10mA

616nC @ 10V

17400pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM08TDUM04PG

Microsemi Corporation

MOSFET 6N-CH 75V 120A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
Power - Max: 138W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione4.048

Standard

75V

120A

4.5 mOhm @ 60A, 10V

4V @ 1mA

153nC @ 10V

4530pF @ 25V

138W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTC80H29T1G

Microsemi Corporation

MOSFET 4N-CH 800V 15A SP1

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Power - Max: 156W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione6.816

Standard

800V

15A

290 mOhm @ 7.5A, 10V

3.9V @ 1mA

90nC @ 10V

2254pF @ 25V

156W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTC80DSK29T3G

Microsemi Corporation

MOSFET 2N-CH 800V 15A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Power - Max: 156W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione4.528

Standard

800V

15A

290 mOhm @ 7.5A, 10V

3.9V @ 1mA

90nC @ 10V

2254pF @ 25V

156W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTC80DDA29T3G

Microsemi Corporation

MOSFET 2N-CH 800V 15A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Power - Max: 156W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione3.088

Standard

800V

15A

290 mOhm @ 7.5A, 10V

3.9V @ 1mA

90nC @ 10V

2254pF @ 25V

156W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTC80A15T1G

Microsemi Corporation

MOSFET 2N-CH 800V 28A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Power - Max: 277W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione7.712

Standard

800V

28A

150 mOhm @ 14A, 10V

3.9V @ 2mA

180nC @ 10V

4507pF @ 25V

277W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTC60DSKM70T3G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione2.816

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTC60DDAM70T3G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione5.104

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTC60AM70T1G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione3.328

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTMC120TAM12CTPAG

Microsemi Corporation

MOSFET 6N-CH 1200V 220A SP6P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 220A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
Power - Max: 925W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione2.944

Standard

1200V (1.2kV)

220A

12 mOhm @ 150A, 20V

2.4V @ 30mA (Typ)

483nC @ 20V

8400pF @ 1000V

925W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTMC60TLM14CAG

Microsemi Corporation

MOSFET 4N-CH 1200V 219A SP6C

FET Type: 4 N-Channel (Three Level Inverter)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 219A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
Power - Max: 925W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione6.992

Standard

1200V (1.2kV)

219A

12 mOhm @ 150A, 20V

2.4V @ 30mA (Typ)

483nC @ 20V

8400pF @ 1000V

925W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTMC120TAM17CTPAG

Microsemi Corporation

MOSFET 6N-CH 1200V 147A SP6P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 147A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 20mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 322nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 1000V
Power - Max: 625W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione6.352

Standard

1200V (1.2kV)

147A

17 mOhm @ 100A, 20V

2.4V @ 20mA (Typ)

322nC @ 20V

5600pF @ 1000V

625W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTMC120AM09CT3AG

Microsemi Corporation

MOSFET 2N-CH 1200V 295A SP3F

FET Type: 2 N Channel (Phase Leg)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 295A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 200A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 40mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 644nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione7.888

Standard

1200V (1.2kV)

295A

9 mOhm @ 200A, 20V

2.4V @ 40mA (Typ)

644nC @ 20V

11000pF @ 1000V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3