Pagina 5 - Prodotti Vishay Semiconductor Diodes Division - Transistor - IGBT - Moduli | Heisener Electronics
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Prodotti Vishay Semiconductor Diodes Division - Transistor - IGBT - Moduli

Record 129
Pagina  5/5
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
VS-GT75LP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 543W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 543W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
pacchetto: INT-A-Pak
Azione3.984
Half Bridge
1200V
150A
543W
2.35V @ 15V, 75A
5mA
5.52nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GA100TS60SF
Vishay Semiconductor Diodes Division

IGBT 600V 220A 780W

  • IGBT Type: PT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 220A
  • Power - Max: 780W
  • Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
pacchetto: INT-A-Pak
Azione4.256
Half Bridge
600V
220A
780W
1.28V @ 15V, 100A
1mA
16.25nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GA200HS60S1
Vishay Semiconductor Diodes Division

IGBT 600V 480A 830W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 480A
  • Power - Max: 830W
  • Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 32.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
pacchetto: INT-A-Pak
Azione7.296
Half Bridge
600V
480A
830W
1.21V @ 15V, 200A
1mA
32.5nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GT75NP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 446W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 446W
  • Vce(on) (Max) @ Vge, Ic: 2.08V @ 15V, 75A (Typ)
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 9.45nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
pacchetto: INT-A-PAK (3 + 4)
Azione6.064
Single
1200V
150A
446W
2.08V @ 15V, 75A (Typ)
1mA
9.45nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-GT400TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 750A 2344W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 750A
  • Power - Max: 2344W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 51.2nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
pacchetto: Double INT-A-PAK (3 + 8)
Azione5.232
Half Bridge
1200V
750A
2344W
2.35V @ 15V, 400A
5mA
51.2nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
VS-GT400TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 600A 2119W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 600A
  • Power - Max: 2119W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 28.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
pacchetto: Double INT-A-PAK (3 + 8)
Azione3.408
Half Bridge
1200V
600A
2119W
2.15V @ 15V, 400A
5mA
28.8nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
VS-GT100TP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 180A 652W INT-A-PAK

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 180A
  • Power - Max: 652W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 12.8nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
pacchetto: INT-A-PAK (3 + 4)
Azione7.952
Half Bridge
1200V
180A
652W
2.35V @ 15V, 100A
5mA
12.8nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-GT100NA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 134A 463W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.880
Single
1200V
134A
463W
2.85V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GT100LA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 134A 463W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione3.936
Single
1200V
134A
463W
2.85V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GT100DA60U
Vishay Semiconductor Diodes Division

IGBT 600V 184A 577W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 184A
  • Power - Max: 577W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione2.304
Single
600V
184A
577W
2V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GT100DA120U
Vishay Semiconductor Diodes Division

IGBT 1200V 258A 893W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 258A
  • Power - Max: 893W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione3.904
Single
1200V
258A
893W
2.1V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB75SA120UP
Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione3.104
Single
1200V
-
658W
3.8V @ 15V, 75A
250µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB75LP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 170A 658W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 170A
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 75A (Typ)
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
pacchetto: INT-A-PAK (3 + 4)
Azione5.712
Single
1200V
170A
658W
1.82V @ 15V, 75A (Typ)
1mA
5.52nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-GB75DA120UP
Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.752
Single
1200V
-
658W
3.8V @ 15V, 75A
250µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB70NA60UF
Vishay Semiconductor Diodes Division

IGBT 600V 111A 447W SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 111A
  • Power - Max: 447W
  • Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione5.008
Single
600V
111A
447W
2.44V @ 15V, 70A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB70LA60UF
Vishay Semiconductor Diodes Division

IGBT 600V 111A 447W SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 111A
  • Power - Max: 447W
  • Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione3.280
Single
600V
111A
447W
2.44V @ 15V, 70A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB50NA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 84A 431W SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 84A
  • Power - Max: 431W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione3.824
Single
1200V
84A
431W
2.8V @ 15V, 50A
50µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227