Toshiba Electronics Europe Ltd. now offers its highly accurate G2 SPICE models, allowing designers to more faithfully simulate the execution of their designs before committing to hardware. In addition to the existing G0 SPICE model emphasizing computational speed over accuracy, the new range of models now accurately simulates transient behavior.
New models of these discrete power devices were developed using a macroscopic model format, combining multiple compact models to match the structure of the device, representing electrical properties with several nonlinear elements and a continuous arbitrary function. This method combines the voltage-dependent properties of parasitic capacitances to enhance the reproducibility of the ID-VDS curve's high-current-domain properties, thereby making switching simulations more accurate and closer to actual measured values.
Simulation is a beneficial tool for designers because they reduce the number of prototypes required and the need for redesign, thereby increasing development efficiency and reducing overall time, cost, and risk.
This model covers low voltage mosfets (12V-300V) and medium and high voltage mosfets (400V to 900V). There are two versions of PSpice and LTSpice.
