Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE SCHOTTKY 50V 33MA DO213AA
|
pacchetto: DO-213AA |
Azione23.352 |
|
50V | 33mA | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A D5A
|
pacchetto: SQ-MELF, A |
Azione7.664 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 70V 33MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione8.904 |
|
70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
pacchetto: B, Axial |
Azione10.536 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 20V 75MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione780.000 |
|
20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 150nA @ 16V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO213AA
|
pacchetto: DO-213AA |
Azione5.392 |
|
75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL
|
pacchetto: A, Axial |
Azione6.696 |
|
600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.2KV 75A TO247
|
pacchetto: TO-247-2 |
Azione29.532 |
|
1200V | 75A | 3.1V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 325ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A AXIAL
|
pacchetto: A, Axial |
Azione19.440 |
|
800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 30A TO247
|
pacchetto: TO-247-2 |
Azione87.180 |
|
1000V | 30A | 2.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 290ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 400MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione6.588 |
|
600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 200V 45A TO247
|
pacchetto: TO-247-2 |
Azione14.190 |
|
200V | 45A | 850mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 500µA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione13.956 |
|
75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 100V 5A POWERMITE
|
pacchetto: Powermite?3 |
Azione50.052 |
|
100V | 5A | 810mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 150pF @ 4V, 1MHz | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 100V 3A POWERMITE
|
pacchetto: Powermite?3 |
Azione90.036 |
|
100V | 3A | 760mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 85pF @ 4V, 1MHz | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 1A POWERMITE1
|
pacchetto: DO-216AA |
Azione26.808 |
|
40V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | 70pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 20V 1A POWERMITE1
|
pacchetto: DO-216AA |
Azione43.308 |
|
20V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | - | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 3A B-MELF
|
pacchetto: SQ-MELF, B |
Azione7.008 |
|
40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100mA @ 40V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A D5A
|
pacchetto: SQ-MELF, A |
Azione15.972 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 45V 1A DO213AB
|
pacchetto: DO-213AB, MELF |
Azione8.208 |
|
45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 3A B-MELF
|
pacchetto: SQ-MELF, B |
Azione14.472 |
|
150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 36A TO247
|
pacchetto: TO-247-2 |
Azione16.656 |
|
1200V | 36A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 600pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA D5D
|
pacchetto: SQ-MELF, D |
Azione8.088 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 200V 120A TO247
|
pacchetto: TO-247-2 |
Azione5.760 |
|
200V | 120A | 950mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 2mA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
pacchetto: A, Axial |
Azione17.544 |
|
400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 30A TO247
|
pacchetto: TO-247-2 |
Azione6.096 |
|
600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 40A TO247
|
pacchetto: TO-247-2 |
Azione4.896 |
|
600V | 40A | 2.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 400MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione59.532 |
|
400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO213AA
|
pacchetto: DO-213AA (Glass) |
Azione30.492 |
|
75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 2A POWERMITE
|
pacchetto: DO-216AA |
Azione57.234 |
|
600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 600V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |