Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE STD REC 1500V S-PKG
|
pacchetto: S, Axial |
Azione7.884 |
|
1500V | 250mA | 5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 1500V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A AXIAL
|
pacchetto: B, Axial |
Azione6.348 |
|
400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE STD REC 1000V 1A
|
pacchetto: A, Axial |
Azione5.840 |
|
1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A D5A
|
pacchetto: SQ-MELF, A |
Azione6.800 |
|
400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
pacchetto: B, Axial |
Azione7.860 |
|
600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
pacchetto: A, Axial |
Azione22.776 |
|
200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 45V 1A DO213AB
|
pacchetto: DO-213AB, MELF |
Azione7.616 |
|
45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL
|
pacchetto: A, Axial |
Azione11.172 |
|
600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1A D5A
|
pacchetto: SQ-MELF, A |
Azione7.140 |
|
100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 3A AXIAL
|
pacchetto: B, Axial |
Azione6.888 |
|
200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 3A AXIAL
|
pacchetto: B, Axial |
Azione6.272 |
|
800V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL
|
pacchetto: A, Axial |
Azione7.224 |
|
600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A D5A
|
pacchetto: SQ-MELF, A |
Azione5.744 |
|
200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.2KV 60A TO247
|
pacchetto: TO-247-2 |
Azione55.236 |
|
1200V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
pacchetto: A, Axial |
Azione5.360 |
|
200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
pacchetto: A, Axial |
Azione7.356 |
|
400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 60A TO247
|
pacchetto: TO-247-2 |
Azione17.640 |
|
1000V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 280ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione13.980 |
|
75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.2KV 40A TO247
|
pacchetto: TO-247-2 |
Azione11.376 |
|
1200V | 40A | 3.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 350ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 30A TO247
|
pacchetto: TO-247-2 |
Azione48.600 |
|
400V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 250µA @ 400V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 60A TO247
|
pacchetto: TO-247-2 |
Azione6.832 |
|
600V | 60A | 2.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 40A TO247
|
pacchetto: TO-247-2 |
Azione9.420 |
|
1000V | 40A | 3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 30A TO247
|
pacchetto: TO-247-2 |
Azione57.744 |
|
600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 3A POWERMITE3
|
pacchetto: Powermite?3 |
Azione14.916 |
|
40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 180pF @ 4V, 1MHz | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA D5D
|
pacchetto: SQ-MELF, D |
Azione6.900 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 300MA D5D
|
pacchetto: SQ-MELF, D |
Azione23.832 |
|
50V | 300mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 36A TO247
|
pacchetto: TO-247-3 |
Azione8.040 |
|
1200V | 36A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 600pF @ 0V, 1MHz | Through Hole | TO-247-3 | TO-247 | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione84.828 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
pacchetto: B, Axial |
Azione8.244 |
|
100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A D5A
|
pacchetto: SQ-MELF, A |
Azione6.912 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |