Pagina 11 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  11/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RW4E065GNTCL1
Rohm Semiconductor

NCH 30V 6.5A, HEML1616L7, POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1616-7T
  • Package / Case: 6-PowerUFDFN
pacchetto: -
Azione7.470
MOSFET (Metal Oxide)
30 V
6.5A (Ta)
4.5V, 10V
2.5V @ 1mA
4.3 nC @ 10 V
260 pF @ 15 V
±20V
-
1.5W (Ta)
22.5mOhm @ 6.5A, 10V
150°C (TJ)
Surface Mount
DFN1616-7T
6-PowerUFDFN
RQ3P045ATTB1
Rohm Semiconductor

PCH -100V -14.5A POWER MOSFET: R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione8.412
MOSFET (Metal Oxide)
100 V
4.5A (Ta), 14.5A (Tc)
4.5V, 10V
2.5V @ 1mA
49 nC @ 10 V
1990 pF @ 50 V
±20V
-
2W (Ta), 20W (Tc)
86mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
RTR025P02HZGTL
Rohm Semiconductor

MOSFET P-CH 20V 2.5A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione31.410
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
2.5V, 4.5V
2V @ 1mA
7 nC @ 4.5 V
630 pF @ 10 V
±12V
-
700mW (Ta)
95mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RQ5E050ATTCL
Rohm Semiconductor

MOSFET P-CH 30V 5A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 760mW (Ta)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione40.914
MOSFET (Metal Oxide)
30 V
5A (Ta)
4.5V, 10V
2.5V @ 1mA
19.4 nC @ 10 V
880 pF @ 15 V
±20V
-
760mW (Ta)
26mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RQ1E050RPFRATR
Rohm Semiconductor

PCH -30V -5A SMALL SIGNAL MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
5A (Ta)
4V, 10V
2.5V @ 1mA
28 nC @ 10 V
1300 pF @ 10 V
±20V
-
1.1W (Ta)
31mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead
RX3L18BBGC16
Rohm Semiconductor

NCH 60V 180A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione2.940
MOSFET (Metal Oxide)
60 V
180A (Tc)
4.5V, 10V
2.5V @ 1mA
160 nC @ 10 V
11000 pF @ 30 V
±20V
-
192W (Tc)
1.84mOhm @ 90A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
R8002CND3FRATL
Rohm Semiconductor

MOSFET N-CH 800V 2A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione22.563
MOSFET (Metal Oxide)
800 V
2A (Tc)
10V
5.5V @ 1mA
12.1 nC @ 10 V
240 pF @ 25 V
±30V
-
69W (Tc)
4.3Ohm @ 1A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RUL035N02FRATR
Rohm Semiconductor

MOSFET N-CH 20V 3.5A TUMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
pacchetto: -
Azione768
MOSFET (Metal Oxide)
20 V
3.5A (Ta)
1.5V, 4.5V
1V @ 1mA
5.7 nC @ 4.5 V
460 pF @ 10 V
±10V
-
1W (Ta)
43mOhm @ 3.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
RX3P07CBHC16
Rohm Semiconductor

NCH 100V 70A, TO-220AB, POWER M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione3.000
MOSFET (Metal Oxide)
100 V
70A (Tc)
6V, 10V
4V @ 1mA
73 nC @ 10 V
4650 pF @ 50 V
±20V
-
135W (Tc)
5.2mOhm @ 70A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RQ1E050RPHZGTR
Rohm Semiconductor

PCH -30V -5A SMALL SIGNAL MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
pacchetto: -
Azione9.000
MOSFET (Metal Oxide)
30 V
5A (Ta)
4V, 10V
2.5V @ 1mA
13 nC @ 4 V
1300 pF @ 10 V
±20V
-
1.1W (Ta)
31mOhm @ 5A, 10V
-55°C ~ 150°C
Surface Mount
TSMT8
8-SMD, Flat Lead
RQ7P035ATTCR
Rohm Semiconductor

PCH -100V -3.5A POWER MOSFET : R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 111mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
3.5A (Ta)
4.5V, 10V
2.5V @ 1mA
40 nC @ 10 V
1540 pF @ 50 V
±20V
-
1.1W (Ta)
111mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead
RH6L040BGTB1
Rohm Semiconductor

NCH 60V 65A, HSMT8, POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 59W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.1mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione71.463
MOSFET (Metal Oxide)
60 V
40A (Tc)
4.5V, 10V
2.5V @ 1mA
18.8 nC @ 10 V
1320 pF @ 30 V
±20V
-
59W (Tc)
7.1mOhm @ 40A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
RH6P030BG
Rohm Semiconductor

TRANS MOSFET N-CH SMD

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RQ3L070BGTB1
Rohm Semiconductor

NCH 60V 20A, HSMT8G, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 24.7mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione8.835
MOSFET (Metal Oxide)
60 V
7A (Ta), 20A (Tc)
4.5V, 10V
2.5V @ 1mA
7.6 nC @ 10 V
460 pF @ 30 V
±20V
-
2W (Ta), 15W (Tc)
24.7mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
R6524KNX3C16
Rohm Semiconductor

650V 24A, TO-220AB, HIGH-SPEED S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 253W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione444
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
5V @ 750µA
45 nC @ 10 V
1850 pF @ 25 V
±20V
-
253W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RX3G07CGNC16
Rohm Semiconductor

MOSFET N-CH 40V 70A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
70A (Tc)
-
2.5V @ 500µA
32 nC @ 10 V
2410 pF @ 20 V
±20V
-
78W (Tc)
4.7mOhm @ 70A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
R6530KNX3C16
Rohm Semiconductor

MOSFET N-CH 650V 30A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 307W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione2.991
MOSFET (Metal Oxide)
650 V
30A (Tc)
10V
5V @ 960µA
56 nC @ 10 V
2350 pF @ 25 V
±20V
-
307W (Tc)
140mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
R6009RND3TL1
Rohm Semiconductor

600V 9A TO-252, PRESTOMOS WITH I

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 5.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.860
MOSFET (Metal Oxide)
600 V
9A (Tc)
15V
7V @ 5.5mA
22 nC @ 15 V
640 pF @ 100 V
±30V
-
125W (Tc)
665mOhm @ 4.5A, 15V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6020YNZ4C13
Rohm Semiconductor

NCH 600V 20A, TO-247, POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 1.65mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 182W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione1.800
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V, 12V
6V @ 1.65mA
28 nC @ 10 V
1200 pF @ 100 V
±30V
-
182W (Tc)
185mOhm @ 6A, 12V
150°C (TJ)
Through Hole
TO-247
TO-247-3
R6006JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 6A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione3.294
MOSFET (Metal Oxide)
600 V
6A (Tc)
15V
7V @ 800µA
15.5 nC @ 15 V
410 pF @ 100 V
±30V
-
86W (Tc)
936mOhm @ 3A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6055VNXC7G
Rohm Semiconductor

600V 23A TO-220FM, PRESTOMOS WIT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 6.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione3.042
MOSFET (Metal Oxide)
600 V
23A (Tc)
10V, 15V
6.5V @ 1.5mA
80 nC @ 10 V
3700 pF @ 100 V
±30V
-
100W (Tc)
71mOhm @ 16A, 15V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RD3G500GNTL
Rohm Semiconductor

MOSFET N-CH 40V 50A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.434
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
2.5V @ 1mA
31 nC @ 10 V
22800 pF @ 20 V
±20V
-
35W (Tc)
4.9mOhm @ 50A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6055VNZ4C13
Rohm Semiconductor

600V 55A TO-247, PRESTOMOS WITH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 6.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione2.031
MOSFET (Metal Oxide)
600 V
55A (Tc)
10V, 15V
6.5V @ 1.5mA
80 nC @ 10 V
3700 pF @ 100 V
±30V
-
543W (Tc)
71mOhm @ 16A, 15V
150°C (TJ)
Through Hole
TO-247
TO-247-3
RD3T075CNTL1
Rohm Semiconductor

MOSFET N-CH 200V 7.5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione4.416
MOSFET (Metal Oxide)
200 V
7.5A (Tc)
10V
5.25V @ 1mA
15 nC @ 10 V
755 pF @ 25 V
±30V
-
52W (Tc)
325mOhm @ 3.75A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RU1L002SNTL
Rohm Semiconductor

MOSFET N-CH 60V 250MA UMT3F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3F
  • Package / Case: SC-85
pacchetto: -
Azione91.881
MOSFET (Metal Oxide)
60 V
250mA (Ta)
2.5V, 10V
2.3V @ 1mA
-
15 pF @ 25 V
±20V
-
200mW (Ta)
2.4Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
UMT3F
SC-85
RSR030N06HZGTL
Rohm Semiconductor

MOSFET N-CH 60V 3A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione44.214
MOSFET (Metal Oxide)
60 V
3A (Ta)
4V, 10V
2.5V @ 1mA
5 nC @ 5 V
380 pF @ 10 V
±20V
-
700mW (Ta)
85mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RD3H160SPTL1
Rohm Semiconductor

MOSFET P-CH 45V 16A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione16.656
MOSFET (Metal Oxide)
45 V
16A (Ta)
4V, 10V
3V @ 1mA
16 nC @ 5 V
2000 pF @ 10 V
±20V
-
20W (Tc)
50mOhm @ 16A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6011ENXC7G
Rohm Semiconductor

600V 11A TO-220FM, LOW-NOISE POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione2.994
MOSFET (Metal Oxide)
600 V
11A (Ta)
10V
4V @ 1mA
32 nC @ 10 V
670 pF @ 25 V
±20V
-
53W (Tc)
390mOhm @ 3.8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack