Pagina 13 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  13/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SCT4045DRHRC15
Rohm Semiconductor

750V, 34A, 4-PIN THD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 115W
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacchetto: -
Azione1.500
SiCFET (Silicon Carbide)
750 V
34A (Tc)
18V
4.8V @ 8.89mA
63 nC @ 18 V
1460 pF @ 500 V
+21V, -4V
-
115W
59mOhm @ 17A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
SCT4018KEC11
Rohm Semiconductor

1200V, 81A, 3-PIN THD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 312W
  • Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione1.173
SiCFET (Silicon Carbide)
1200 V
81A (Tj)
18V
4.8V @ 22.2mA
170 nC @ 18 V
4532 pF @ 800 V
+21V, -4V
-
312W
23.4mOhm @ 42A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RV5C040APTCR1
Rohm Semiconductor

MOSFET P-CH 20V 4A DFN1616-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
  • Vgs (Max): -8V, 0V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1616-8S
  • Package / Case: 6-PowerWFDFN
pacchetto: -
Azione9.000
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
1V @ 1mA
8.5 nC @ 4.5 V
2000 pF @ 10 V
-8V, 0V
-
700mW (Ta)
85mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
DFN1616-8S
6-PowerWFDFN
SCT2160KEHRC11
Rohm Semiconductor

1200V, 22A, THD, SILICON-CARBIDE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione1.272
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
18V
4V @ 2.5mA
62 nC @ 18 V
1200 pF @ 800 V
+22V, -6V
-
165W (Tc)
208mOhm @ 7A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
R6020ENZC17
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione900
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
4V @ 1mA
60 nC @ 10 V
1400 pF @ 25 V
±20V
-
120W (Tc)
196mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RUR040N02HZGTL
Rohm Semiconductor

MOSFET N-CH 20V 4A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione17.358
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
1.3V @ 1mA
8 nC @ 4.5 V
680 pF @ 10 V
±10V
-
700mW (Ta)
35mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RQ5E040TNTL
Rohm Semiconductor

MOSFET N-CH 30V 4A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione17.025
MOSFET (Metal Oxide)
30 V
4A (Ta)
2.5V, 4.5V
1.5V @ 1mA
8.3 nC @ 4.5 V
475 pF @ 10 V
±12V
-
700mW (Ta)
48mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RQ3E180AJTB1
Rohm Semiconductor

NCH 30V 18A MIDDLE POWER MOSFET:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 11mA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione8.832
MOSFET (Metal Oxide)
30 V
18A (Ta), 30A (Tc)
2.5V, 4.5V
1.5V @ 11mA
39 nC @ 4.5 V
4290 pF @ 15 V
±12V
-
2W (Ta), 30W (Tc)
4.5mOhm @ 18A, 4.5V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
SCT3017ALHRC11
Rohm Semiconductor

SICFET N-CH 650V 118A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 427W
  • Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione3.318
SiCFET (Silicon Carbide)
650 V
118A (Tc)
18V
5.6V @ 23.5mA
172 nC @ 18 V
2884 pF @ 500 V
+22V, -4V
-
427W
22.1mOhm @ 47A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RQ3L090GNTB
Rohm Semiconductor

MOSFET N-CH 60V 9A/30A 8HSMT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 13.9mOhm @ 9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione53.100
MOSFET (Metal Oxide)
60 V
9A (Ta), 30A (Tc)
4.5V, 10V
2.7V @ 300µA
24.5 nC @ 10 V
1260 pF @ 30 V
±20V
-
2W (Ta)
13.9mOhm @ 9A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
R6515KNX3C16
Rohm Semiconductor

650V 15A, TO-220AB, HIGH-SPEED S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 161W (Tc)
  • Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione2.868
MOSFET (Metal Oxide)
650 V
15A (Tc)
10V
5V @ 430µA
27.5 nC @ 10 V
1050 pF @ 25 V
±20V
-
161W (Tc)
315mOhm @ 6.5A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
R6535ENZ4C13
Rohm Semiconductor

650V 35A TO-247, LOW-NOISE POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.21mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 379W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
pacchetto: -
Azione1.713
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
4V @ 1.21mA
110 nC @ 10 V
2600 pF @ 25 V
±20V
-
379W (Tc)
115mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
R6030ENZC17
Rohm Semiconductor

MOSFET N-CH 600V 30A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione900
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
4V @ 1mA
85 nC @ 10 V
2100 pF @ 25 V
±20V
-
120W (Tc)
130mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
SCT3030ALHRC11
Rohm Semiconductor

SICFET N-CH 650V 70A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 262W
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione1.404
SiCFET (Silicon Carbide)
650 V
70A (Tc)
18V
5.6V @ 13.3mA
104 nC @ 18 V
1526 pF @ 500 V
+22V, -4V
-
262W
39mOhm @ 27A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RD3P100SNTL1
Rohm Semiconductor

MOSFET N-CH 100V 10A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione50.049
MOSFET (Metal Oxide)
100 V
10A (Ta)
4V, 10V
2.5V @ 1mA
18 nC @ 10 V
700 pF @ 25 V
±20V
-
20W (Tc)
133mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT4045DWAHRTL
Rohm Semiconductor

750V, 31A, 7-PIN SMD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7LA
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
750 V
31A (Tc)
18V
4.8V @ 8.89mA
63 nC @ 18 V
1460 pF @ 500 V
+21V, -4V
-
-
59mOhm @ 17A, 18V
175°C (TJ)
Surface Mount
TO-263-7LA
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RQ3E100ATTB
Rohm Semiconductor

MOSFET P-CH 30V 10A/31A 8HSMT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione21.936
MOSFET (Metal Oxide)
30 V
10A (Ta), 31A (Tc)
4.5V, 10V
2.5V @ 1mA
42 nC @ 10 V
1900 pF @ 15 V
±20V
-
2W (Ta)
11.4mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
SCT3040KRHRC15
Rohm Semiconductor

1200V, 55A, 4-PIN THD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 262W
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacchetto: -
Azione1.305
MOSFET (Metal Oxide)
1200 V
55A (Tc)
18V
5.6V @ 10mA
107 nC @ 18 V
1337 pF @ 800 V
+22V, -4V
-
262W
52mOhm @ 20A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
RD3H080SPFRATL
Rohm Semiconductor

MOSFET P-CH 45V 8A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione483
MOSFET (Metal Oxide)
45 V
8A (Ta)
4V, 10V
3V @ 1mA
9 nC @ 5 V
1000 pF @ 10 V
±20V
-
15W (Tc)
91mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSS84AHZGT116
Rohm Semiconductor

PCH -60V -0.23A, SOT-23, SMALL S

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione27.999
MOSFET (Metal Oxide)
60 V
230mA (Ta)
4.5V, 10V
2.5V @ 100µA
-
34 pF @ 30 V
±20V
-
200mW (Ta)
5.3Ohm @ 230mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
RS3L110ATTB1
Rohm Semiconductor

PCH -60V -11A POWER MOSFET - RS3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 12.8mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
60 V
11A (Ta)
4.5V, 10V
2.5V @ 1mA
115 nC @ 10 V
6300 pF @ 30 V
±20V
-
1.4W (Ta)
12.8mOhm @ 11A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
R6524KNZ4C13
Rohm Semiconductor

650V 24A TO-247, HIGH-SPEED SWIT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
pacchetto: -
Azione3.177
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
5V @ 750µA
45 nC @ 10 V
1850 pF @ 25 V
±20V
-
245W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
R6025JNZC8
Rohm Semiconductor

MOSFET N-CH 600V 25A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 4.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione39
MOSFET (Metal Oxide)
600 V
25A (Tc)
15V
7V @ 4.5mA
57 nC @ 15 V
1900 pF @ 100 V
±30V
-
85W (Tc)
182mOhm @ 12.5A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
BSM180C12P2E202
Rohm Semiconductor

SICFET N-CH 1200V 204A MODULE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 35.2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 1360W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: Module
  • Package / Case: Module
pacchetto: -
Azione12
SiCFET (Silicon Carbide)
1200 V
204A (Tc)
-
4V @ 35.2mA
-
20000 pF @ 10 V
+22V, -6V
-
1360W (Tc)
-
175°C (TJ)
Chassis Mount
Module
Module
RD3H160SPFRATL
Rohm Semiconductor

MOSFET P-CH 45V 16A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione18.531
MOSFET (Metal Oxide)
45 V
16A (Ta)
4V, 10V
3V @ 1mA
16 nC @ 5 V
2000 pF @ 10 V
±20V
-
20W (Tc)
50mOhm @ 16A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RSQ015P10HZGTR
Rohm Semiconductor

MOSFET P-CH 100V 1.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
Azione69.945
MOSFET (Metal Oxide)
100 V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
17 nC @ 5 V
950 pF @ 25 V
±20V
-
950mW (Ta)
470mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
R6020JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 20A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 252W (Tc)
  • Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione8.361
MOSFET (Metal Oxide)
600 V
20A (Tc)
15V
7V @ 3.5mA
45 nC @ 15 V
1500 pF @ 100 V
±30V
-
252W (Tc)
234mOhm @ 10A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6011KNXC7G
Rohm Semiconductor

600V 11A TO-220FM, HIGH-SPEED SW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione3.000
MOSFET (Metal Oxide)
600 V
11A (Ta)
10V
5V @ 1mA
22 nC @ 10 V
740 pF @ 25 V
±20V
-
53W (Tc)
390mOhm @ 3.8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack