Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

RV2C010UNT2L

Rohm Semiconductor

MOSFET N-CH 20V 1A VML1006

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta)
• Rds On (Max) @ Id, Vgs: 470 mOhm @ 500mA, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: VML1006
• Package / Case: SC-101, SOT-883

pacchetto: SC-101, SOT-883

RUM002N05T2L

Rohm Semiconductor

MOSFET N-CH 50V 0.2A 3VMT

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: VMT3
• Package / Case: SOT-723

pacchetto: SOT-723

RE1C002ZPTL

Rohm Semiconductor

1.2V DRIVE PCH MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: EMT3F (SOT-416FL)
• Package / Case: SC-89, SOT-490

pacchetto: SC-89, SOT-490

RQ3E080BNTB

Rohm Semiconductor

MOSFET N-CH 30V 8A HSMT8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 15.2 mOhm @ 8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSMT (3.2x3)
• Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

RE1C001UNTCL

Rohm Semiconductor

MOSFET N-CH 20V 0.1A EMT3FM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: EMT3F (SOT-416FL)
• Package / Case: SC-89, SOT-490

pacchetto: SC-89, SOT-490

RMW130N03TB

Rohm Semiconductor

MOSFET N-CH 30V 13A 8PSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 13A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PSOP
• Package / Case: 8-SMD, Flat Lead

pacchetto: 8-SMD, Flat Lead

RQ1A060ZPTR

Rohm Semiconductor

MOSFET P-CH 12V 6A TSMT8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT8
• Package / Case: 8-SMD, Flat Lead

pacchetto: 8-SMD, Flat Lead

RE1E002SPTCL

Rohm Semiconductor

MOSFET P-CH 30V 0.25A EMT3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: EMT3F (SOT-416FL)
• Package / Case: SC-89, SOT-490

pacchetto: SC-89, SOT-490

US5U35TR

Rohm Semiconductor

MOSFET P-CH 45V 700MA TUMT5

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 700mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TUMT5
• Package / Case: 6-SMD (5 Leads), Flat Lead

pacchetto: 6-SMD (5 Leads), Flat Lead

RU1J002YNTCL

Rohm Semiconductor

MOSFET N-CH 50V 0.2A UMT3F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UMT3F
• Package / Case: SC-85

pacchetto: SC-85

RSM002N06T2L

Rohm Semiconductor

MOSFET N-CH 60V 0.25A VMT3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: VMT3
• Package / Case: SOT-723

pacchetto: SOT-723

R6046ANZ1C9

Rohm Semiconductor

MOSFET N-CH 600V 46A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

pacchetto: TO-247-3

R6035KNZC8

Rohm Semiconductor

NCH 600V 35A POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 102W (Tc)
• Rds On (Max) @ Id, Vgs: 102 mOhm @ 18.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PF
• Package / Case: TO-3P-3 Full Pack

pacchetto: TO-3P-3 Full Pack

SCT3080ALGC11

Rohm Semiconductor

MOSFET N-CH 650V 30A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5.6V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 571pF @ 500V
• Vgs (Max): +22V, -4V
• FET Feature: -
• Power Dissipation (Max): 134W (Tc)
• Rds On (Max) @ Id, Vgs: 104 mOhm @ 10A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247N
• Package / Case: TO-247-3

pacchetto: TO-247-3

SCT2H12NYTB

Rohm Semiconductor

1700V 1.2 OHM 4A SIC FET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1700V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 4V @ 410µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V
• Vgs (Max): +22V, -6V
• FET Feature: -
• Power Dissipation (Max): 44W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

RSH070P05GZETB

Rohm Semiconductor

MOSFET P-CH 45V 7A SOP8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 47.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

RQ3G150GNTB

Rohm Semiconductor

NCH 40V 30A POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSMT (3.2x3)
• Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

RS3E075ATTB

Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8SOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

RQ7E055ATTCR

Rohm Semiconductor

PCH -30V -5.5A MIDDLE POWER MOSF

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Tc)
• Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT8
• Package / Case: 8-SMD, Flat Lead

pacchetto: 8-SMD, Flat Lead

RQ5E070BNTCL

Rohm Semiconductor

NCH 30V 7A MIDDLE POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 16.1 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT3
• Package / Case: SC-96

pacchetto: SC-96

RF6C055BCTCR

Rohm Semiconductor

PCH -20V -5.5A MIDDLE POWER MOSF

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 25.8 mOhm @ 5.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TUMT6
• Package / Case: 6-SMD, Flat Leads

pacchetto: 6-SMD, Flat Leads

RQ6C065BCTCR

Rohm Semiconductor

PCH -20V -6.5A MIDDLE POWER MOSF

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Tc)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT6 (SC-95)
• Package / Case: SC-95-6

pacchetto: SC-95-6

RQ5E030AJTCL

Rohm Semiconductor

NCH 30V 3A MIDDLE POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT3
• Package / Case: SC-96

pacchetto: SC-96

RQ5E025ATTCL

Rohm Semiconductor

PCH -30V -2.5A MIDDLE POWER MOSF

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 91 mOhm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT3
• Package / Case: SC-96

pacchetto: SC-96

R6046FNZC8

Rohm Semiconductor

MOSFET N-CH 600V 46A TO-3PF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 93 mOhm @ 23A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PF
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

R6046FNZ1C9

Rohm Semiconductor

MOSFET N-CH 600V 46A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6230pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 98 mOhm @ 23A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

pacchetto: TO-247-3

R6047ENZ1C9

Rohm Semiconductor

MOSFET N-CH 600V 47A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 72 mOhm @ 25.8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

pacchetto: TO-247-3

R6020FNX

Rohm Semiconductor

MOSFET N-CH 600V 20A TO-220FM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FM
• Package / Case: TO-220-2 Full Pack

pacchetto: TO-220-2 Full Pack