Pagina 26 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 887
Language Translation

* Please refer to the English Version as our Official Version.

Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  26/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot RZR025P01TL
Rohm Semiconductor

MOSFET P-CH 12V 2.5A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione508.464
MOSFET (Metal Oxide)
12V
2.5A (Ta)
1.5V, 4.5V
1V @ 1mA
13nC @ 4.5V
1350pF @ 6V
±10V
-
1W (Ta)
61 mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RAF040P01TCL
Rohm Semiconductor

MOSFET P-CH 12V 4A TUMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 6V
  • Vgs (Max): -8V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione2.089.200
MOSFET (Metal Oxide)
12V
4A (Ta)
1.5V, 4.5V
1V @ 1mA
37nC @ 4.5V
4000pF @ 6V
-8V
-
800mW (Ta)
30 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
RS1G120MNTB
Rohm Semiconductor

MOSFET N-CH 40V 12A 8HSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 12A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione53.874
MOSFET (Metal Oxide)
40V
12A (Ta)
4.5V, 10V
2.5V @ 1mA
9.4nC @ 10V
570pF @ 20V
±20V
-
3W (Ta), 25W (Tc)
16.2 mOhm @ 12A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
hot RTQ020N03TR
Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
  • Vgs (Max): 12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione450.660
MOSFET (Metal Oxide)
30V
2A (Ta)
2.5V, 4.5V
1.5V @ 1mA
3.3nC @ 4.5V
135pF @ 10V
12V
-
1.25W (Ta)
125 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RQ3E120GNTB
Rohm Semiconductor

MOSFET N-CH 30V 12A 8-HSMT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 16W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 12A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione27.756
MOSFET (Metal Oxide)
30V
12A (Ta)
4.5V, 10V
2.5V @ 1mA
10nC @ 10V
590pF @ 15V
±20V
-
2W (Ta), 16W (Tc)
8.8 mOhm @ 12A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
RF4E080GNTR
Rohm Semiconductor

MOSFET N-CH 30V 8A 8-HUML

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-HUML2020L8 (2x2)
  • Package / Case: 8-PowerUDFN
pacchetto: 8-PowerUDFN
Azione23.922
MOSFET (Metal Oxide)
30V
8A (Ta)
4.5V, 10V
2.5V @ 250µA
5.8nC @ 10V
295pF @ 15V
±20V
-
2W (Ta)
17.6 mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
6-HUML2020L8 (2x2)
8-PowerUDFN
hot RRL035P03TR
Rohm Semiconductor

MOSFET P-CH 30V 3.5A TUMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione55.452
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4V, 10V
2.5V @ 1mA
8nC @ 5V
800pF @ 10V
±20V
-
320mW (Ta)
50 mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
hot RSE002P03TL
Rohm Semiconductor

MOSFET P-CH 30V 200MA SOT416

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
pacchetto: SC-75, SOT-416
Azione1.554.852
MOSFET (Metal Oxide)
30V
200mA (Ta)
4V, 10V
2.5V @ 1mA
-
30pF @ 10V
±20V
-
150mW (Ta)
1.4 Ohm @ 200mA, 10V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
RQ6C050UNTR
Rohm Semiconductor

MOSFET N-CH 20V 5A TSMT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione161.160
MOSFET (Metal Oxide)
20V
5A (Ta)
1.5V, 4.5V
1V @ 1mA
12nC @ 4.5V
900pF @ 10V
±10V
-
1.25W (Ta)
30 mOhm @ 5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot RHK003N06T146
Rohm Semiconductor

MOSFET N-CH 60V 300MA SOT-346

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMT3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione523.872
MOSFET (Metal Oxide)
60V
300mA (Ta)
4V, 10V
2.5V @ 1mA
6nC @ 10V
33pF @ 10V
±20V
-
200mW (Ta)
1 Ohm @ 300mA, 10V
150°C (TJ)
Surface Mount
SMT3
TO-236-3, SC-59, SOT-23-3
RW1A030APT2CR
Rohm Semiconductor

MOSFET P-CH 12V 3A WEMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 6V
  • Vgs (Max): -8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione95.514
MOSFET (Metal Oxide)
12V
3A (Ta)
1.5V, 4.5V
1V @ 1mA
22nC @ 4.5V
2700pF @ 6V
-8V
-
700mW (Ta)
42 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
6-WEMT
SOT-563, SOT-666
hot RW1C025ZPT2CR
Rohm Semiconductor

MOSFET P-CH 20V 2.5A WEMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione86.580
MOSFET (Metal Oxide)
20V
2.5A (Ta)
1.5V, 4.5V
1V @ 1mA
21nC @ 4.5V
1300pF @ 10V
±10V
-
700mW (Ta)
65 mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
6-WEMT
SOT-563, SOT-666
hot RTF016N05TL
Rohm Semiconductor

MOSFET N-CH 45V 1.6A TUMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.6A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione36.120
MOSFET (Metal Oxide)
45V
1.6A (Ta)
2.5V, 4.5V
1.5V @ 1mA
2.3nC @ 4.5V
150pF @ 10V
±12V
-
320mW (Ta)
190 mOhm @ 1.6A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
hot RHK005N03T146
Rohm Semiconductor

MOSFET N-CH 30V 500MA SOT-346

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMT3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione663.012
MOSFET (Metal Oxide)
30V
500mA (Ta)
4V, 10V
2.5V @ 1mA
-
45pF @ 10V
±20V
-
200mW (Ta)
550 mOhm @ 500mA, 10V
150°C (TJ)
Surface Mount
SMT3
TO-236-3, SC-59, SOT-23-3
hot RRF015P03TL
Rohm Semiconductor

MOSFET P-CH 30V 1.5A TUMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione142.440
MOSFET (Metal Oxide)
30V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
6.4nC @ 10V
230pF @ 10V
±20V
-
320mW (Ta)
160 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
RQ3E070BNTB
Rohm Semiconductor

MOSFET N-CH 30V 7A HSMT8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione24.366
MOSFET (Metal Oxide)
30V
7A (Ta)
4.5V, 10V
2.5V @ 1mA
8.9nC @ 10V
410pF @ 15V
±20V
-
2W (Ta)
27 mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
hot 2SK2731T146
Rohm Semiconductor

MOSFET N-CH 30V 200MA SOT-346

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 100mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMT3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.034.804
MOSFET (Metal Oxide)
30V
200mA (Ta)
4V, 10V
2.5V @ 1mA
-
25pF @ 10V
±20V
-
200mW (Ta)
2.8 Ohm @ 100mA, 10V
150°C (TJ)
Surface Mount
SMT3
TO-236-3, SC-59, SOT-23-3
hot RJK005N03T146
Rohm Semiconductor

MOSFET N-CH 30V 500MA SOT-346

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 580 mOhm @ 500mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMT3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione1.599.456
MOSFET (Metal Oxide)
30V
500mA (Ta)
2.5V, 4.5V
1.5V @ 1mA
4nC @ 4V
60pF @ 10V
±12V
-
200mW (Ta)
580 mOhm @ 500mA, 4.5V
150°C (TJ)
Surface Mount
SMT3
TO-236-3, SC-59, SOT-23-3
hot RQ5E035ATTCL
Rohm Semiconductor

MOSFET P-CH 30V 3.5A TSMT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione71.640
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4.5V, 10V
2.5V @ 1mA
10nC @ 10V
475pF @ 15V
±20V
-
1W (Ta)
50 mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RRF015P03GTL
Rohm Semiconductor

MOSFET P-CH 30V 1.5A TUMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione47.346
MOSFET (Metal Oxide)
30V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
6.4nC @ 10V
230pF @ 10V
±20V
-
320mW (Ta)
160 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
hot RZF013P01TL
Rohm Semiconductor

MOSFET P-CH 12V 1.3A TUMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione156.012
MOSFET (Metal Oxide)
12V
1.3A (Ta)
1.5V, 4.5V
1V @ 1mA
2.4nC @ 4.5V
290pF @ 6V
±10V
-
800mW (Ta)
260 mOhm @ 1.3A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
hot RUU002N05T106
Rohm Semiconductor

MOSFET N-CH 50V 0.2A UMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione375.732
MOSFET (Metal Oxide)
50V
200mA (Ta)
1.2V, 4.5V
1V @ 1mA
-
25pF @ 10V
±8V
-
200mW (Ta)
2.2 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
hot RSU002N06T106
Rohm Semiconductor

MOSFET N-CH 60V 0.25A UMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione186.000
MOSFET (Metal Oxide)
60V
250mA (Ta)
2.5V, 10V
2.3V @ 1mA
-
15pF @ 25V
±20V
-
200mW (Ta)
2.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
RU1E002SPTCL
Rohm Semiconductor

MOSFET P-CH 30V 0.25A UMT3F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3F
  • Package / Case: SC-85
pacchetto: SC-85
Azione28.848
MOSFET (Metal Oxide)
30V
250mA (Ta)
4V, 10V
2.5V @ 1mA
-
30pF @ 10V
±20V
-
200mW (Ta)
1.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
UMT3F
SC-85
hot RU1C001ZPTL
Rohm Semiconductor

MOSFET P-CH 20V 0.1A UMT3F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3F
  • Package / Case: SC-85
pacchetto: SC-85
Azione36.000
MOSFET (Metal Oxide)
20V
100mA (Ta)
1.2V, 4.5V
1V @ 100µA
-
15pF @ 10V
±10V
-
150mW (Ta)
3.8 Ohm @ 100mA, 4.5V
150°C (TJ)
Surface Mount
UMT3F
SC-85
R6076ENZ1C9
Rohm Semiconductor

MOSFET N-CH 600V 76A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 44.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione5.744
MOSFET (Metal Oxide)
600V
76A (Tc)
10V
4V @ 1mA
260nC @ 10V
6500pF @ 25V
±20V
-
120W (Tc)
42 mOhm @ 44.4A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
SCT2280KEC
Rohm Semiconductor

MOSFET N-CH 1200V 14A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 1.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 667pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 108W (Tc)
  • Rds On (Max) @ Id, Vgs: 364 mOhm @ 4A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione20.160
SiCFET (Silicon Carbide)
1200V
14A (Tc)
18V
4V @ 1.4mA
36nC @ 18V
667pF @ 800V
+22V, -6V
-
108W (Tc)
364 mOhm @ 4A, 18V
175°C (TJ)
Through Hole
TO-247
TO-247-3
SCT3120ALGC11
Rohm Semiconductor

MOSFET NCH 650V 21A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 103W (Tc)
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 6.7A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione18.396
SiCFET (Silicon Carbide)
650V
21A (Tc)
18V
5.6V @ 3.33mA
38nC @ 18V
460pF @ 500V
+22V, -4V
-
103W (Tc)
156 mOhm @ 6.7A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3