Pagina 24 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
Contattaci
SalesDept@heisener.com 86-755-83210559 x831
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  24/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SCT3030ALGC11
Rohm Semiconductor

MOSFET NCH 650V 70A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 262W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione24.444
SiCFET (Silicon Carbide)
650V
70A (Tc)
18V
5.6V @ 13.3mA
104nC @ 18V
1526pF @ 500V
+22V, -4V
-
262W (Tc)
39 mOhm @ 27A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SCT2080KEC
Rohm Semiconductor

MOSFET N-CH 1200V 40A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 4.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 262W (Tc)
  • Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione26.964
SiCFET (Silicon Carbide)
1200V
40A (Tc)
18V
4V @ 4.4mA
106nC @ 18V
2080pF @ 800V
+22V, -6V
-
262W (Tc)
117 mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247
TO-247-3
SCT3060ALGC11
Rohm Semiconductor

MOSFET NCH 650V 39A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 852pF @ 500V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione13.860
SiCFET (Silicon Carbide)
650V
39A (Tc)
18V
5.6V @ 6.67mA
58nC @ 18V
852pF @ 500V
+22V, -4V
-
165W (Tc)
78 mOhm @ 13A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SCT2120AFC
Rohm Semiconductor

MOSFET N-CH 650V 29A TO-220AB

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 3.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione17.088
SiCFET (Silicon Carbide)
650V
29A (Tc)
18V
4V @ 3.3mA
61nC @ 18V
1200pF @ 500V
+22V, -6V
-
165W (Tc)
156 mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SCT2H12NZGC11
Rohm Semiconductor

MOSFET N-CH 1700V 3.7A

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PFM
  • Package / Case: TO-3PFM, SC-93-3
pacchetto: TO-3PFM, SC-93-3
Azione22.524
SiCFET (Silicon Carbide)
1700V
3.7A (Tc)
18V
4V @ 900µA
14nC @ 18V
184pF @ 800V
+22V, -6V
-
35W (Tc)
1.5 Ohm @ 1.1A, 18V
175°C (TJ)
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
SCT2450KEC
Rohm Semiconductor

MOSFET N-CH 1200V 10A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 585 mOhm @ 3A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione20.796
SiCFET (Silicon Carbide)
1200V
10A (Tc)
18V
4V @ 900µA
27nC @ 18V
463pF @ 800V
+22V, -6V
-
85W (Tc)
585 mOhm @ 3A, 18V
175°C (TJ)
Through Hole
TO-247
TO-247-3
hot RJP020N06T100
Rohm Semiconductor

MOSFET N-CH 60V 2A SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MPT3
  • Package / Case: TO-243AA
pacchetto: TO-243AA
Azione275.112
MOSFET (Metal Oxide)
60V
2A (Ta)
2.5V, 4.5V
1.5V @ 1mA
10nC @ 4V
160pF @ 10V
±12V
-
500mW (Ta)
240 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
MPT3
TO-243AA
hot RSQ015P10TR
Rohm Semiconductor

MOSFET P-CH 100V 1.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 470 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione73.560
MOSFET (Metal Oxide)
100V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
17nC @ 5V
950pF @ 25V
±20V
-
600mW (Ta)
470 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot 2SK3065T100
Rohm Semiconductor

MOSFET N-CH 60V 2A SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MPT3
  • Package / Case: TO-243AA
pacchetto: TO-243AA
Azione2.296.920
MOSFET (Metal Oxide)
60V
2A (Ta)
2.5V, 4V
1.5V @ 1mA
-
160pF @ 10V
±20V
-
500mW (Ta)
320 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
MPT3
TO-243AA
hot RTR025N03TL
Rohm Semiconductor

MOSFET N-CH 30V 2.5A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
  • Vgs (Max): 12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 92 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione2.007.852
MOSFET (Metal Oxide)
30V
2.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
4.6nC @ 4.5V
220pF @ 10V
12V
-
1W (Ta)
92 mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RUF015N02TL
Rohm Semiconductor

MOSFET N-CH 20V 1.5A TUMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione167.280
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.8V, 4.5V
1V @ 1mA
2.5nC @ 4.5V
110pF @ 10V
±10V
-
800mW (Ta)
180 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
hot RTR040N03TL
Rohm Semiconductor

MOSFET N-CH 30V 4A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione1.498.452
MOSFET (Metal Oxide)
30V
4A (Ta)
2.5V, 4.5V
1.5V @ 1mA
8.3nC @ 4.5V
475pF @ 10V
±12V
-
1W (Ta)
48 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RSU002P03T106
Rohm Semiconductor

MOSFET P-CH 30V 0.25A SOT-323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione481.224
MOSFET (Metal Oxide)
30V
250mA (Ta)
4V, 10V
2.5V @ 1mA
-
30pF @ 10V
±20V
-
200mW (Ta)
1.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
hot RUM003N02T2L
Rohm Semiconductor

MOSFET N-CH 20V 300MA VMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
pacchetto: SOT-723
Azione4.967.664
MOSFET (Metal Oxide)
20V
300mA (Ta)
1.8V, 4V
1V @ 1mA
-
25pF @ 10V
±8V
-
150mW (Ta)
1 Ohm @ 300mA, 4V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot 2SK3541T2L
Rohm Semiconductor

MOSFET N-CH 30V .1A VMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
pacchetto: SOT-723
Azione4.569.240
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
13pF @ 5V
±20V
-
150mW (Ta)
8 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot 2SK3018T106
Rohm Semiconductor

MOSFET N-CH 30V .1A SOT-323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione17.036.316
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
13pF @ 5V
±20V
-
200mW (Ta)
8 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
hot 2SK3019TL
Rohm Semiconductor

MOSFET N-CH 30V .1A SOT416

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
pacchetto: SC-75, SOT-416
Azione5.418.120
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
13pF @ 5V
±20V
-
150mW (Ta)
8 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
hot RUM001L02T2CL
Rohm Semiconductor

MOSFET N-CH 20V 0.1A VMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
pacchetto: SOT-723
Azione1.932.720
MOSFET (Metal Oxide)
20V
100mA (Ta)
1.2V, 4.5V
1V @ 100µA
-
7.1pF @ 10V
±8V
-
150mW (Ta)
3.5 Ohm @ 100mA, 4.5V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot RK7002BT116
Rohm Semiconductor

MOSFET N-CH 60V 0.25A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione1.046.388
MOSFET (Metal Oxide)
60V
250mA (Ta)
2.5V, 10V
2.3V @ 1mA
-
15pF @ 25V
±20V
-
200mW (Ta)
2.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
hot RZM001P02T2L
Rohm Semiconductor

MOSFET P-CH 20V 0.1A VMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
pacchetto: SOT-723
Azione7.072
MOSFET (Metal Oxide)
20V
100mA (Ta)
1.2V, 4.5V
1V @ 100µA
-
15pF @ 10V
±10V
-
150mW (Ta)
3.8 Ohm @ 100mA, 4.5V
150°C (TJ)
Surface Mount
VMT3
SOT-723
RRS075P03FRATB
Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
7.5A (Ta)
4V, 10V
2.5V @ 1mA
21 nC @ 5 V
1900 pF @ 10 V
±20V
-
2W (Ta)
21mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
BSS138BKWT106
Rohm Semiconductor

NCH 60V 380MA, SOT-323, SMALL SI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 680mOhm @ 380mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacchetto: -
Azione24.930
MOSFET (Metal Oxide)
60 V
380mA (Ta)
2.5V, 10V
2V @ 10µA
-
47 pF @ 30 V
±20V
-
200mW (Ta)
680mOhm @ 380mA, 10V
150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
R6520KNZC17
Rohm Semiconductor

MOSFET N-CH 650V 20A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione900
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5V @ 630µA
40 nC @ 10 V
1550 pF @ 25 V
±20V
-
68W (Tc)
205mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6009END3TL1
Rohm Semiconductor

MOSFET N-CH 600V 9A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione15.048
MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
4V @ 1mA
23 nC @ 10 V
430 pF @ 25 V
±20V
-
94W (Tc)
535mOhm @ 2.8A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6011KND3TL1
Rohm Semiconductor

MOSFET N-CH 600V 11A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 124W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.410
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
5V @ 1mA
22 nC @ 10 V
740 pF @ 25 V
±20V
-
124W (Tc)
390mOhm @ 3.8A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ6E060ATTCR
Rohm Semiconductor

MOSFET P-CH 30V 6A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
Azione11.328
MOSFET (Metal Oxide)
30 V
6A (Ta)
4.5V, 10V
2.5V @ 1mA
25.9 nC @ 10 V
1200 pF @ 15 V
±20V
-
950mW (Ta)
26.4mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
R6013VNXC7G
Rohm Semiconductor

600V 8A TO-220FM, PRESTOMOS WITH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 6.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione3.240
MOSFET (Metal Oxide)
600 V
8A (Tc)
10V, 15V
6.5V @ 500µA
21 nC @ 10 V
900 pF @ 100 V
±30V
-
54W (Tc)
300mOhm @ 3A, 15V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RQ1E075XNTCR
Rohm Semiconductor

MOSFET N-CH 30V 7.5A TSMT8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
pacchetto: -
Azione80.574
MOSFET (Metal Oxide)
30 V
7.5A (Ta)
4V, 10V
2.5V @ 1mA
6.8 nC @ 5 V
440 pF @ 10 V
±20V
-
1.1W (Ta)
17mOhm @ 7.5A, 10V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead