Pagina 21 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  21/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RV4E031RPTCR1
Rohm Semiconductor

MOSFET P-CH 30V 3.1A DFN1616-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: DFN1616-6W
  • Package / Case: 6-PowerWFDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3.1A (Ta)
4.5V, 10V
2.5V @ 1mA
4.8 nC @ 5 V
460 pF @ 10 V
±20V
-
1.5W
105mOhm @ 3.1A, 10V
150°C (TJ)
Surface Mount, Wettable Flank
DFN1616-6W
6-PowerWFDFN
R6020ANZFL1C8
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
4.15V @ 1mA
65 nC @ 10 V
2040 pF @ 25 V
±30V
-
120W (Tc)
220mOhm @ 10A, 10V
150°C
Through Hole
TO-3PF
TO-3P-3 Full Pack
RSJ301N10FRATL
Rohm Semiconductor

MOSFET N-CH 100V 30A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione3.150
MOSFET (Metal Oxide)
100 V
30A (Ta)
4V, 10V
2.5V @ 1mA
60 nC @ 10 V
2100 pF @ 25 V
±20V
-
50W (Ta)
46mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RXH070N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 7A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione5.334
MOSFET (Metal Oxide)
30 V
7A (Ta)
4V, 10V
2.5V @ 1mA
5.8 nC @ 5 V
390 pF @ 10 V
±20V
-
1.4W (Ta)
28mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RSQ015N06HZGTR
Rohm Semiconductor

MOSFET N-CH 60V 1.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
Azione8.589
MOSFET (Metal Oxide)
60 V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
2 nC @ 5 V
110 pF @ 10 V
±20V
-
950mW (Ta)
290mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
BSS84XHZGG2CR
Rohm Semiconductor

MOSFET P-CH 60V 230MA DFN1010-3W

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1010-3W
  • Package / Case: 3-XFDFN
pacchetto: -
Azione210
MOSFET (Metal Oxide)
60 V
230mA (Ta)
-
2.5V @ 100µA
-
34 pF @ 30 V
±20V
-
1W (Ta)
5.3Ohm @ 230mA, 10V
150°C (TJ)
Surface Mount
DFN1010-3W
3-XFDFN
RS1E350BNTB1
Rohm Semiconductor

NCH 30V 80A POWER MOSFET: RS1E35

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione7.200
MOSFET (Metal Oxide)
30 V
35A (Ta), 80A (Tc)
4.5V, 10V
2.5V @ 1mA
185 nC @ 10 V
7900 pF @ 15 V
±20V
-
3W (Ta), 35W (Tc)
1.7mOhm @ 35A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RS6L090BGTB1
Rohm Semiconductor

NCH 60V 90A, HSOP8, POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione6.258
MOSFET (Metal Oxide)
60 V
90A (Tc)
4.5V, 10V
2.5V @ 1mA
28 nC @ 10 V
1950 pF @ 30 V
±20V
-
3W (Ta), 73W (Tc)
4.7mOhm @ 90A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RJ1G08CGNTLL
Rohm Semiconductor

MOSFET N-CH 40V 80A LPTL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 80A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTL
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione2.880
MOSFET (Metal Oxide)
40 V
80A (Tc)
4.5V, 10V
2.5V @ 500µA
31.1 nC @ 10 V
2410 pF @ 20 V
±20V
-
78W (Tc)
5.6mOhm @ 80A, 10V
150°C (TJ)
Surface Mount
LPTL
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RQ6E035TNTR
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
Azione8.835
MOSFET (Metal Oxide)
30 V
3.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
6.4 nC @ 4.5 V
285 pF @ 10 V
±12V
-
950mW (Ta)
54mOhm @ 3.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RS6G120BHTB1
Rohm Semiconductor

NCH 40V 210A, HSOP8, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 210A (Ta), 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
210A (Ta), 120A (Tc)
6V, 10V
4V @ 1mA
67 nC @ 10 V
4790 pF @ 20 V
±20V
-
3W (Ta), 104W (Tc)
1.38mOhm @ 90A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RS6P060BHTB1
Rohm Semiconductor

NCH 100V 60A, HSOP8, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione6.705
MOSFET (Metal Oxide)
100 V
60A (Tc)
6V, 10V
4V @ 1mA
25 nC @ 10 V
1560 pF @ 50 V
±20V
-
3W (Ta), 73W (Tc)
10.6mOhm @ 60A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
SCT3160KLHRC11
Rohm Semiconductor

SICFET N-CH 1200V 17A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 103W
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione1.893
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
5.6V @ 2.5mA
42 nC @ 18 V
398 pF @ 800 V
+22V, -4V
-
103W
208mOhm @ 5A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RD3L07BATTL1
Rohm Semiconductor

PCH -60V -70A POWER MOSFET - RD3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 101W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.7mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione6.819
MOSFET (Metal Oxide)
60 V
70A (Tc)
4.5V, 10V
2.5V @ 1mA
105 nC @ 10 V
6700 pF @ 30 V
±20V
-
101W (Tc)
12.7mOhm @ 70A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RTR030P02HZGTL
Rohm Semiconductor

MOSFET P-CH 20V 3A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 34µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione6.483
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
2V @ 34µA
9.3 nC @ 4.5 V
840 pF @ 10 V
±12V
-
700mW (Ta)
75mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
R6007KND3TL1
Rohm Semiconductor

NCH 600V 7A TO-252, HIGH-SPEED S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.500
MOSFET (Metal Oxide)
600 V
7A (Tc)
10V
5V @ 1mA
14.5 nC @ 10 V
470 pF @ 25 V
±20V
-
78W (Tc)
620mOhm @ 2.4A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6530ENXC7G
Rohm Semiconductor

650V 30A TO-220FM, LOW-NOISE POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione2.934
MOSFET (Metal Oxide)
650 V
30A (Ta)
10V
4V @ 960µA
90 nC @ 10 V
2100 pF @ 25 V
±20V
-
86W (Tc)
140mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RS1E220ATTB1
Rohm Semiconductor

MOSFET P-CH 30V 22A/76A 8HSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione32.019
MOSFET (Metal Oxide)
30 V
22A (Ta), 76A (Tc)
4.5V, 10V
2.5V @ 2mA
130 nC @ 10 V
5850 pF @ 15 V
±20V
-
3W (Ta)
4.1mOhm @ 22A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RS3L140GNGZETB
Rohm Semiconductor

NCH 60V 14A POWER MOSFET: RS3L14

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione7.470
MOSFET (Metal Oxide)
60 V
14A (Ta)
4.5V, 10V
2.7V @ 500µA
58 nC @ 10 V
2980 pF @ 30 V
±20V
-
1.4W (Ta)
6.5mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RXL035N03TCR
Rohm Semiconductor

NCH 30V 3..5A SMALL SIGNAL MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 910mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
pacchetto: -
Azione8.700
MOSFET (Metal Oxide)
30 V
3.5A (Ta)
4V, 10V
2.5V @ 1mA
3.3 nC @ 5 V
180 pF @ 10 V
±20V
-
910mW (Ta)
50mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
R6535ENZC17
Rohm Semiconductor

MOSFET N-CH 650V 35A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.21mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 102W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione900
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
4V @ 1.21mA
110 nC @ 10 V
2600 pF @ 25 V
±20V
-
102W (Tc)
115mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6024KNZC17
Rohm Semiconductor

MOSFET N-CH 600V 24A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione900
MOSFET (Metal Oxide)
600 V
24A (Tc)
10V
5V @ 1mA
45 nC @ 10 V
2000 pF @ 25 V
±20V
-
74W (Tc)
165mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RQ3E110AJTB
Rohm Semiconductor

MOSFET N-CH 30V 11A/24A 8HSMT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 11A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione41.604
MOSFET (Metal Oxide)
30 V
11A (Ta), 24A (Tc)
2.5V, 4.5V
1.5V @ 1mA
13.5 nC @ 4.5 V
1500 pF @ 15 V
±12V
-
2W (Ta)
11.7mOhm @ 11A, 4.5V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
R6520ENZC17
Rohm Semiconductor

MOSFET N-CH 650V 20A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione900
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
4V @ 630µA
61 nC @ 10 V
1400 pF @ 25 V
±20V
-
68W (Tc)
205mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RA1C030LDT5CL
Rohm Semiconductor

NCH 20V 3.0A, SMM1006, SMM1006:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
  • Vgs (Max): +7V, -0.2V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DSN1006-3
  • Package / Case: 3-XFDFN
pacchetto: -
Azione44.607
MOSFET (Metal Oxide)
20 V
3A (Ta)
1.8V, 4.5V
1.5V @ 1mA
1.5 nC @ 4.5 V
150 pF @ 10 V
+7V, -0.2V
-
1W (Ta)
140mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
DSN1006-3
3-XFDFN
SCT3080KLHRC11
Rohm Semiconductor

SICFET N-CH 1200V 31A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 165W
  • Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione2.526
SiCFET (Silicon Carbide)
1200 V
31A (Tc)
18V
5.6V @ 5mA
60 nC @ 18 V
785 pF @ 800 V
+22V, -4V
-
165W
104mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RF6L025BGTCR
Rohm Semiconductor

NCH 60V 2.5A, TUMT6, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 910mW (Ta)
  • Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
60 V
2.5A (Ta)
4.5V, 10V
2.5V @ 1mA
3.1 nC @ 10 V
135 pF @ 30 V
±20V
-
910mW (Ta)
91mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
R6004JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 4A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione2.979
MOSFET (Metal Oxide)
600 V
4A (Tc)
15V
7V @ 450µA
10.5 nC @ 15 V
260 pF @ 100 V
±30V
-
60W (Tc)
1.43Ohm @ 2A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB