Pagina 20 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  20/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
R6049YNZ4C13
Rohm Semiconductor

NCH 600V 49A, TO-247G, POWER MOS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 2.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 448W (Tc)
  • Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
pacchetto: -
Azione1.800
MOSFET (Metal Oxide)
600 V
49A (Tc)
10V, 12V
6V @ 2.9mA
65 nC @ 10 V
2940 pF @ 100 V
±30V
-
448W (Tc)
82mOhm @ 11A, 12V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
RTQ045N03HZGTR
Rohm Semiconductor

MOSFET N-CH 30V 4.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
Azione8.793
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
10.7 nC @ 4.5 V
540 pF @ 10 V
±12V
-
950mW (Ta)
43mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RX3G18BGNC16
Rohm Semiconductor

NCH 40V 180A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.64mOhm @ 90A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione8.709
MOSFET (Metal Oxide)
40 V
180A (Tc)
4.5V, 10V
2.5V @ 1mA
168 nC @ 10 V
12000 pF @ 20 V
±20V
-
125W (Tc)
1.64mOhm @ 90A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
R6035KNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 35A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 379W (Tc)
  • Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione1.740
MOSFET (Metal Oxide)
600 V
35A (Tc)
10V
5V @ 1mA
72 nC @ 10 V
3000 pF @ 25 V
±20V
-
379W (Tc)
102mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
SCT3120AW7TL
Rohm Semiconductor

SICFET N-CH 650V 21A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 100W
  • Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Azione2.436
SiCFET (Silicon Carbide)
650 V
21A (Tc)
-
5.6V @ 3.33mA
38 nC @ 18 V
460 pF @ 500 V
+22V, -4V
-
100W
156mOhm @ 6.7A, 18V
175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
R6530ENZC17
Rohm Semiconductor

MOSFET N-CH 650V 30A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione900
MOSFET (Metal Oxide)
650 V
30A (Tc)
10V
4V @ 960µA
90 nC @ 10 V
2100 pF @ 25 V
±20V
-
86W (Tc)
140mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6061YNZ4C13
Rohm Semiconductor

NCH 600V 61A, TO-247, POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione1.788
MOSFET (Metal Oxide)
600 V
61A (Tc)
10V, 12V
6V @ 3.5mA
76 nC @ 10 V
3700 pF @ 100 V
±30V
-
568W (Tc)
60mOhm @ 13A, 12V
150°C (TJ)
Through Hole
TO-247
TO-247-3
RD3P03BBHTL1
Rohm Semiconductor

NCH 100V 35A, TO-252, POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione6.906
MOSFET (Metal Oxide)
100 V
35A (Tc)
6V, 10V
4V @ 1mA
12.4 nC @ 10 V
800 pF @ 50 V
±20V
-
50W (Tc)
23mOhm @ 35A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT4045DRC15
Rohm Semiconductor

750V, 45M, 4-PIN THD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 115W
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacchetto: -
Azione14.583
SiCFET (Silicon Carbide)
750 V
34A (Tc)
18V
4.8V @ 8.89mA
63 nC @ 18 V
1460 pF @ 500 V
+21V, -4V
-
115W
59mOhm @ 17A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
RQ6A050ZPTR
Rohm Semiconductor

MOSFET P-CH 12V 5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
Azione8.814
MOSFET (Metal Oxide)
12 V
5A (Ta)
1.5V, 4.5V
1V @ 1mA
35 nC @ 4.5 V
2850 pF @ 6 V
±10V
-
950mW (Ta)
26mOhm @ 5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RS3P070ATTB1
Rohm Semiconductor

PCH -100V -7A POWER MOSFET: RS3P

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione9.000
MOSFET (Metal Oxide)
100 V
7A (Ta)
4.5V, 10V
2.5V @ 1mA
115 nC @ 10 V
5150 pF @ 50 V
±20V
-
2W (Ta)
36mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
R6520ENZ4C13
Rohm Semiconductor

650V 20A TO-247, LOW-NOISE POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
pacchetto: -
Azione3.459
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
4V @ 630µA
61 nC @ 10 V
1400 pF @ 25 V
±20V
-
231W (Tc)
205mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
R6009JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 9A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 1.38mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione6.000
MOSFET (Metal Oxide)
600 V
9A (Tc)
15V
7V @ 1.38mA
22 nC @ 15 V
645 pF @ 100 V
±30V
-
125W (Tc)
585mOhm @ 4.5A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6511KNXC7G
Rohm Semiconductor

650V 11A TO-220FM, HIGH-SPEED SW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione11.952
MOSFET (Metal Oxide)
650 V
11A (Ta)
10V
5V @ 320µA
22 nC @ 10 V
760 pF @ 25 V
±20V
-
53W (Tc)
400mOhm @ 3.8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RTQ020N05HZGTR
Rohm Semiconductor

MOSFET N-CH 45V 2A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
Azione2.943
MOSFET (Metal Oxide)
45 V
2A (Ta)
2.5V, 4.5V
1.5V @ 1mA
2.3 nC @ 4.5 V
150 pF @ 10 V
±12V
-
950mW (Ta)
190mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RSJ400N10FRATL
Rohm Semiconductor

MOSFET N-CH 100V 40A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione33
MOSFET (Metal Oxide)
100 V
40A (Tc)
4V, 10V
2.5V @ 1mA
90 nC @ 10 V
3600 pF @ 25 V
±20V
-
1.35W (Ta), 50W (Tc)
27mOhm @ 40A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RSJ451N04FRATL
Rohm Semiconductor

MOSFET N-CH 40V 45A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione2.400
MOSFET (Metal Oxide)
40 V
45A (Tc)
10V
3V @ 1mA
43 nC @ 10 V
2400 pF @ 25 V
±20V
-
50W (Tc)
13.5mOhm @ 25A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6047ENZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 47A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 481W (Tc)
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione9
MOSFET (Metal Oxide)
600 V
47A (Tc)
10V
4V @ 1mA
145 nC @ 10 V
3850 pF @ 25 V
±20V
-
481W (Tc)
72mOhm @ 25.8A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
R6009KND3TL1
Rohm Semiconductor

NCH 600V 9A TO-252, HIGH-SPEED S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.500
MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
5V @ 1mA
16.5 nC @ 10 V
540 pF @ 25 V
±20V
-
94W (Tc)
535mOhm @ 2.8A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT2450KEHRC11
Rohm Semiconductor

1200V, 10A, THD, SILICON-CARBIDE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione1.320
SiCFET (Silicon Carbide)
1200 V
10A (Tc)
18V
4V @ 900µA
27 nC @ 18 V
463 pF @ 800 V
+22V, -6V
-
85W (Tc)
585mOhm @ 3A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
R6014YNXC7G
Rohm Semiconductor

600V 9A TO-220FM, FAST SWITCHING

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 1.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione3.204
MOSFET (Metal Oxide)
600 V
9A (Tc)
10V, 12V
6V @ 1.4mA
20 nC @ 10 V
890 pF @ 100 V
±30V
-
54W (Tc)
260mOhm @ 5A, 12V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RQ7E100ATTCR
Rohm Semiconductor

MOSFET P-CH 30V 10A TSMT8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
pacchetto: -
Azione7.851
MOSFET (Metal Oxide)
30 V
10A (Ta)
4.5V, 10V
2.5V @ 1mA
53 nC @ 10 V
2370 pF @ 15 V
±20V
-
1.1W (Ta)
11.2mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead
RW4E045ATTCL1
Rohm Semiconductor

PCH -30V -4.5A POWER MOSFET. RW4

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1616-7T
  • Package / Case: 6-PowerUFDFN
pacchetto: -
Azione8.820
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
4.5V, 10V
2.5V @ 1mA
11 nC @ 10 V
485 pF @ 15 V
±20V
-
1.5W (Ta)
48mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
DFN1616-7T
6-PowerUFDFN
RSH065N06GZETB
Rohm Semiconductor

MOSFET N-CH 60V 6.5A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione327
MOSFET (Metal Oxide)
60 V
6.5A (Ta)
4V, 10V
2.5V @ 1mA
16 nC @ 5 V
900 pF @ 10 V
20V
-
2W (Ta)
37mOhm @ 6.5A, 10V
150°C
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RQ3G110ATTB
Rohm Semiconductor

PCH -40V -35A, HSMT8, POWER MOSF

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 12.4mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione25.827
MOSFET (Metal Oxide)
40 V
11A (Ta), 35A (Tc)
4.5V, 10V
2.5V @ 1mA
46 nC @ 10 V
2750 pF @ 20 V
±20V
-
2W (Ta)
12.4mOhm @ 11A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
R6020JNZC8
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 76W (Tc)
  • Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione90
MOSFET (Metal Oxide)
600 V
20A (Tc)
15V
7V @ 3.5mA
45 nC @ 15 V
1500 pF @ 100 V
±30V
-
76W (Tc)
234mOhm @ 10A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RJ1R10BBHTL1
Rohm Semiconductor

NCH 150V 105A, TO-263AB, POWER M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 181W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione2.400
MOSFET (Metal Oxide)
150 V
105A (Tc)
6V, 10V
4V @ 1mA
130 nC @ 10 V
7750 pF @ 75 V
±20V
-
181W (Tc)
8.2mOhm @ 50A, 10V
150°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT3080ALHRC11
Rohm Semiconductor

SICFET N-CH 650V 30A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 134W
  • Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione1.362
SiCFET (Silicon Carbide)
650 V
30A (Tc)
18V
5.6V @ 5mA
48 nC @ 18 V
571 pF @ 500 V
+22V, -4V
-
134W
104mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3