Prodotti Toshiba Semiconductor and Storage

Numero di parte	Produttore	Descrizione	pacchetto	Azione
TK10A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 9.7A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	pacchetto: TO-220-3 Full Pack	Azione4.192
TK12A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 12A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	pacchetto: TO-220-3 Full Pack	Azione5.184
TK31V60W5,LVQ	Toshiba Semiconductor and Storage	MOSFET N -CH 600V 30.8A DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 109 mOhm @ 15.4A, 10V Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	pacchetto: 4-VSFN Exposed Pad	Azione19.758
SSM6N37FU,LF	Toshiba Semiconductor and Storage	MOSFET ARRAY 2N-CH 20V 250MA US6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 300mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione25.446
2SA1832-GR,LF	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A SSM Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacchetto: SC-75, SOT-416	Azione3.504
2SC4116-GR,LF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A USM Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacchetto: SC-70, SOT-323	Azione139.338
RN2908(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione5.328
1SV239TPH3F	Toshiba Semiconductor and Storage	DIODE VARACTOR 15V USC Capacitance @ Vr, F: 2pF @ 10V, 1MHz Capacitance Ratio: 2.4 Capacitance Ratio Condition: C2/C10 Voltage - Peak Reverse (Max): 15V Diode Type: Single Q @ Vr, F: - Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC	pacchetto: SC-76, SOD-323	Azione142.524
TH58NYG3S0HBAI6	Toshiba Semiconductor and Storage	IC EEPROM 8GBIT 25NS 67VFBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	pacchetto: 67-VFBGA	Azione7.536
TC74LCX157FTELM	Toshiba Semiconductor and Storage	IC MULTIPLEXER QUAD 2-CH 16TSSOP Type: Multiplexer Circuit: 4 x 2:1 Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	pacchetto: 16-TSSOP (0.173", 4.40mm Width)	Azione5.104
TC4001BF(EL,N,F)	Toshiba Semiconductor and Storage	IC GATE NOR 4CH 2-INP 14SOP Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 3 V ~ 18 V Current - Quiescent (Max): 1µA Current - Output High, Low: 3.4mA, 3.4mA Logic Level - Low: 1.5 V ~ 4 V Logic Level - High: 3.5 V ~ 11 V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOP Package / Case: 14-SOIC (0.209", 5.30mm Width)	pacchetto: 14-SOIC (0.209", 5.30mm Width)	Azione19.056
TC75S56F,LF	Toshiba Semiconductor and Storage	IC C0MP GP CMOS PUSH-PULL SMV Type: General Purpose Number of Elements: 1 Output Type: Push-Pull Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V Voltage - Input Offset (Max): 1mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA Current - Quiescent (Max): 22µA CMRR, PSRR (Typ): - Propagation Delay (Max): 680ns Hysteresis: - Operating Temperature: -40°C ~ 85°C Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Supplier Device Package: SMV	pacchetto: SC-74A, SOT-753	Azione25.074
TODX2350A(F)	Toshiba Semiconductor and Storage	TXRX MOD OPTICAL 10MBPS 650NM Data Rate: 10Mbps Wavelength: 650nm Applications: General Purpose Voltage - Supply: 4.75 V ~ 5.25 V Connector Type: JIS F07 Mounting Type: Through Hole	pacchetto: -	Azione6.048
TC35667FSG-006(EL)	Toshiba Semiconductor and Storage	BLUETOOTH V4.1 LOW ENERGY STANDA Type: - RF Family/Standard: - Protocol: - Modulation: - Frequency: - Data Rate (Max): - Power - Output: - Sensitivity: - Memory Size: - Serial Interfaces: - GPIO: - Voltage - Supply: - Current - Receiving: - Current - Transmitting: - Operating Temperature: - Package / Case: 40-VFQFN Exposed Pad	pacchetto: 40-VFQFN Exposed Pad	Azione4.428
TLP3542(F)	Toshiba Semiconductor and Storage	PHOTOCOUPLER PHOTORELAY 6-DIP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 100 mOhm Load Current: 2.5A Voltage - Input: 1.33VDC Voltage - Load: 0 ~ 60 V Mounting Type: Through Hole Termination Style: PC Pin Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads Supplier Device Package: 6-DIP (Cut), 5 Lead Relay Type: Relay	pacchetto: 6-DIP (0.300", 7.62mm), 5 Leads	Azione26.556
TLP2161(TP,F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV 2CH PUSH PULL 8SO Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 20kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 15MBd Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Rise / Fall Time (Typ): 3ns, 3ns Voltage - Forward (Vf) (Typ): 1.5V Current - DC Forward (If) (Max): 10mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione148.584
TBD62381AFWG,EL	Toshiba Semiconductor and Storage	TRANSISTOR ARRAY INTERFACE DRIVE Switch Type: General Purpose Number of Outputs: 8 Ratio - Input:Output: 8:8 Output Configuration: High Side Output Type: N-Channel Interface: - Voltage - Load: 0 ~ 50 V Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Current - Output (Max): 500mA Rds On (Typ): 1 Ohm Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C Package / Case: 18-SOIC (0.295", 7.50mm Width) Supplier Device Package: 18-SOP	pacchetto: 18-SOIC (0.295", 7.50mm Width)	Azione16.608
TLP7920(D4-A,F	Toshiba Semiconductor and Storage	ISO AMP ANALOG OUTPUT GAIN SAFE Amplifier Type: Isolation Number of Circuits: 1 Output Type: Differential Slew Rate: - Gain Bandwidth Product: - -3db Bandwidth: 230kHz Current - Input Bias: 5.5nA Voltage - Input Offset: 730µV Current - Supply: 12mA Current - Output / Channel: - Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	pacchetto: 8-DIP (0.300", 7.62mm)	Azione6.992
7UL1G126FS,LF	Toshiba Semiconductor and Storage	X34 L-MOS LVP SERIES BUFFER 3-ST Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-953 Supplier Device Package: fSV	pacchetto: SOT-953	Azione203.868
TCR2LN095,LF	Toshiba Semiconductor and Storage	200MA LDO VOUT=0.95V DROPOUT=200 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.95V Voltage - Output (Max): - Voltage Dropout (Max): 1.46V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	pacchetto: 4-XFDFN Exposed Pad	Azione4.640
TCR2LF13,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT1.3V DROPOUT220MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione4.960
CMZ20-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE ZENER 20V 2W MFLAT Voltage - Zener (Nom) (Vz): 20 V Tolerance: ±10% Power - Max: 2 W Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10 µA @ 14 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8)	pacchetto: -	Azione8.700
RN2104-LF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacchetto: -	Azione15.507
TCR3UF18B-LM-CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1.8V 300MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.464V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680 nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	pacchetto: -	Request a Quote
RN2905FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	pacchetto: -	Azione22.500
ULN2004AFWG-N-E	Toshiba Semiconductor and Storage	IC PWR RELAY 7NPN 1:1 16SOL Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 1.25W Frequency - Transition: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOL	pacchetto: -	Request a Quote
TK5A60W5-S5VX	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	pacchetto: -	Request a Quote
TCKE800NA-RF	Toshiba Semiconductor and Storage	IC ELECTRONIC FUSE 10WSON Function: Electronic Fuse Sensing Method: - Accuracy: - Voltage - Input: 4.4V ~ 18V Current - Output: 5A Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Supplier Device Package: 10-WSONB (3x3)	pacchetto: -	Azione121.023
CRY62-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE ZENER 6.2V 700MW SFLAT Voltage - Zener (Nom) (Vz): 6.2 V Tolerance: ±9.68% Power - Max: 700 mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 10 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	pacchetto: -	Azione7.800
TK55S10N1-LXHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Azione29.772

TK10A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 9.7A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

Azione4.192

TK12A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 12A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

Azione5.184

TK31V60W5,LVQ

Toshiba Semiconductor and Storage

MOSFET N -CH 600V 30.8A DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 109 mOhm @ 15.4A, 10V
Operating Temperature: 150°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: 4-DFN-EP (8x8)
Package / Case: 4-VSFN Exposed Pad

pacchetto: 4-VSFN Exposed Pad

Azione19.758

SSM6N37FU,LF

Toshiba Semiconductor and Storage

MOSFET ARRAY 2N-CH 20V 250MA US6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Power - Max: 300mW
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione25.446

2SA1832-GR,LF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacchetto: SC-75, SOT-416

Azione3.504

2SC4116-GR,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USM

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacchetto: SC-70, SOT-323

Azione139.338

RN2908(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione5.328

1SV239TPH3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 15V USC

Capacitance @ Vr, F: 2pF @ 10V, 1MHz
Capacitance Ratio: 2.4
Capacitance Ratio Condition: C2/C10
Voltage - Peak Reverse (Max): 15V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC

pacchetto: SC-76, SOD-323

Azione142.524

TH58NYG3S0HBAI6

Toshiba Semiconductor and Storage

IC EEPROM 8GBIT 25NS 67VFBGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 67-VFBGA
Supplier Device Package: 67-VFBGA (6.5x8)

pacchetto: 67-VFBGA

Azione7.536

TC74LCX157FTELM

Toshiba Semiconductor and Storage

IC MULTIPLEXER QUAD 2-CH 16TSSOP

Type: Multiplexer
Circuit: 4 x 2:1
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

pacchetto: 16-TSSOP (0.173", 4.40mm Width)

Azione5.104

TC4001BF(EL,N,F)

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14SOP

Logic Type: NOR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 3 V ~ 18 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 3.4mA, 3.4mA
Logic Level - Low: 1.5 V ~ 4 V
Logic Level - High: 3.5 V ~ 11 V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOP
Package / Case: 14-SOIC (0.209", 5.30mm Width)

pacchetto: 14-SOIC (0.209", 5.30mm Width)

Azione19.056

TC75S56F,LF

Toshiba Semiconductor and Storage

IC C0MP GP CMOS PUSH-PULL SMV

Type: General Purpose
Number of Elements: 1
Output Type: Push-Pull
Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
Voltage - Input Offset (Max): 1mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Current - Quiescent (Max): 22µA
CMRR, PSRR (Typ): -
Propagation Delay (Max): 680ns
Hysteresis: -
Operating Temperature: -40°C ~ 85°C
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

Azione25.074

TODX2350A(F)

Toshiba Semiconductor and Storage

TXRX MOD OPTICAL 10MBPS 650NM

Data Rate: 10Mbps
Wavelength: 650nm
Applications: General Purpose
Voltage - Supply: 4.75 V ~ 5.25 V
Connector Type: JIS F07
Mounting Type: Through Hole

pacchetto: -

Azione6.048

TC35667FSG-006(EL)

Toshiba Semiconductor and Storage

BLUETOOTH V4.1 LOW ENERGY STANDA

Type: -
RF Family/Standard: -
Protocol: -
Modulation: -
Frequency: -
Data Rate (Max): -
Power - Output: -
Sensitivity: -
Memory Size: -
Serial Interfaces: -
GPIO: -
Voltage - Supply: -
Current - Receiving: -
Current - Transmitting: -
Operating Temperature: -
Package / Case: 40-VFQFN Exposed Pad

pacchetto: 40-VFQFN Exposed Pad

Azione4.428

TLP3542(F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 6-DIP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 100 mOhm
Load Current: 2.5A
Voltage - Input: 1.33VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Through Hole
Termination Style: PC Pin
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Supplier Device Package: 6-DIP (Cut), 5 Lead
Relay Type: Relay

pacchetto: 6-DIP (0.300", 7.62mm), 5 Leads

Azione26.556

TLP2161(TP,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH PUSH PULL 8SO

Number of Channels: 2
Inputs - Side 1/Side 2: 2/0
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 20kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 15MBd
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Rise / Fall Time (Typ): 3ns, 3ns
Voltage - Forward (Vf) (Typ): 1.5V
Current - DC Forward (If) (Max): 10mA
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione148.584

TBD62381AFWG,EL

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

Switch Type: General Purpose
Number of Outputs: 8
Ratio - Input:Output: 8:8
Output Configuration: High Side
Output Type: N-Channel
Interface: -
Voltage - Load: 0 ~ 50 V
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Current - Output (Max): 500mA
Rds On (Typ): 1 Ohm
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 18-SOP

pacchetto: 18-SOIC (0.295", 7.50mm Width)

Azione16.608

TLP7920(D4-A,F

Toshiba Semiconductor and Storage

ISO AMP ANALOG OUTPUT GAIN SAFE

Amplifier Type: Isolation
Number of Circuits: 1
Output Type: Differential
Slew Rate: -
Gain Bandwidth Product: -
-3db Bandwidth: 230kHz
Current - Input Bias: 5.5nA
Voltage - Input Offset: 730µV
Current - Supply: 12mA
Current - Output / Channel: -
Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

pacchetto: 8-DIP (0.300", 7.62mm)

Azione6.992

7UL1G126FS,LF

Toshiba Semiconductor and Storage

X34 L-MOS LVP SERIES BUFFER 3-ST

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: 3-State
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-953
Supplier Device Package: fSV

pacchetto: SOT-953

Azione203.868

TCR2LN095,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=0.95V DROPOUT=200

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.95V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.46V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

pacchetto: 4-XFDFN Exposed Pad

Azione4.640

TCR2LF13,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.3V DROPOUT220MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione4.960

CMZ20-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 20V 2W MFLAT

Voltage - Zener (Nom) (Vz): 20 V
Tolerance: ±10%
Power - Max: 2 W
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 10 µA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)

pacchetto: -

Azione8.700

RN2104-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacchetto: -

Azione15.507

TCR3UF18B-LM-CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 300MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.464V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680 nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

pacchetto: -

Request a Quote

RN2905FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

pacchetto: -

Azione22.500

ULN2004AFWG-N-E

Toshiba Semiconductor and Storage

IC PWR RELAY 7NPN 1:1 16SOL

Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: 1.25W
Frequency - Transition: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOL

pacchetto: -

Request a Quote

TK5A60W5-S5VX

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

pacchetto: -

Request a Quote

TCKE800NA-RF

Toshiba Semiconductor and Storage

IC ELECTRONIC FUSE 10WSON

Function: Electronic Fuse
Sensing Method: -
Accuracy: -
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Supplier Device Package: 10-WSONB (3x3)

pacchetto: -

Azione121.023

CRY62-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 6.2V 700MW SFLAT

Voltage - Zener (Nom) (Vz): 6.2 V
Tolerance: ±9.68%
Power - Max: 700 mW
Impedance (Max) (Zzt): 60 Ohms
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)

pacchetto: -

Azione7.800

TK55S10N1-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 55A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

Azione29.772