Pagina 34 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  34/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
R5011ANX
Rohm Semiconductor

MOSFET N-CH 500V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione10.056
MOSFET (Metal Oxide)
500V
11A (Ta)
10V
4.5V @ 1mA
30nC @ 10V
1000pF @ 25V
±30V
-
50W (Tc)
500 mOhm @ 5.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R5007FNX
Rohm Semiconductor

MOSFET N-CH 500V 7A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione9.864
MOSFET (Metal Oxide)
500V
7A (Tc)
10V
4V @ 1mA
15nC @ 10V
450pF @ 25V
±30V
-
40W (Tc)
1.3 Ohm @ 3.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RCX200N20
Rohm Semiconductor

MOSFET N-CH 200V 20A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione8.976
MOSFET (Metal Oxide)
200V
20A (Tc)
10V
5V @ 1mA
40nC @ 10V
1900pF @ 25V
±30V
-
2.23W (Ta), 40W (Tc)
130 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot RCX160N20
Rohm Semiconductor

MOSFET N-CH 200V 16A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione24.360
MOSFET (Metal Oxide)
200V
16A (Tc)
10V
5.25V @ 1mA
26nC @ 10V
1370pF @ 25V
±30V
-
2.23W (Ta), 40W (Tc)
180 mOhm @ 8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
ZDX080N50
Rohm Semiconductor

MOSFET N-CH 500V 8A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione8.748
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
4V @ 1mA
23nC @ 10V
1120pF @ 25V
±30V
-
40W (Tc)
850 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot R5005CNX
Rohm Semiconductor

MOSFET N-CH 500V 5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione10.692
MOSFET (Metal Oxide)
500V
5A (Tc)
10V
4.5V @ 1mA
10.8nC @ 10V
320pF @ 25V
±30V
-
40W (Tc)
1.6 Ohm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot R5007ANX
Rohm Semiconductor

MOSFET N-CH 500V 7A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione138.384
MOSFET (Metal Oxide)
500V
7A (Ta)
10V
4.5V @ 1mA
13nC @ 10V
500pF @ 25V
±30V
-
40W (Tc)
1.05 Ohm @ 3.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot RCX080N25
Rohm Semiconductor

MOSFET N-CH 250V 8A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione90.000
MOSFET (Metal Oxide)
250V
8A (Tc)
10V
5V @ 1mA
15nC @ 10V
840pF @ 25V
±30V
-
2.23W (Ta), 35W (Tc)
600 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RCX051N25
Rohm Semiconductor

MOSFET N-CH 250V 5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.36 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione9.804
MOSFET (Metal Oxide)
250V
5A (Tc)
10V
5.5V @ 1mA
8.5nC @ 10V
350pF @ 25V
±30V
-
2.23W (Ta), 30W (Tc)
1.36 Ohm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
ZDX050N50
Rohm Semiconductor

MOSFET N-CH 500V 5A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione10.116
MOSFET (Metal Oxide)
500V
5A (Tc)
10V
4.4V @ 1mA
14nC @ 10V
600pF @ 25V
±30V
-
40W (Tc)
1.5 Ohm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RCJ120N25TL
Rohm Semiconductor

MOSFET N-CH 250V 12A LPT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS (SC-83)
  • Package / Case: SC-83
pacchetto: SC-83
Azione21.300
MOSFET (Metal Oxide)
250V
12A (Tc)
10V
5V @ 1mA
35nC @ 10V
1800pF @ 25V
±30V
-
1.56W (Ta), 40W (Tc)
235 mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
LPTS (SC-83)
SC-83
RCJ120N20TL
Rohm Semiconductor

MOSFET N-CH 200V 12A LPT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 325 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS (SC-83)
  • Package / Case: SC-83
pacchetto: SC-83
Azione23.124
MOSFET (Metal Oxide)
200V
12A (Tc)
10V
5.25V @ 1mA
15nC @ 10V
740pF @ 25V
±30V
-
1.56W (Ta), 40W (Tc)
325 mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
LPTS (SC-83)
SC-83
RCJ050N25TL
Rohm Semiconductor

MOSFET N-CH 250V 5A LPT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.36 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS (SC-83)
  • Package / Case: SC-83
pacchetto: SC-83
Azione18.156
MOSFET (Metal Oxide)
250V
5A (Tc)
10V
5.5V @ 1mA
8.5nC @ 10V
350pF @ 25V
±30V
-
1.56W (Ta), 30W (Tc)
1.36 Ohm @ 2.5A, 10V
150°C (TJ)
Surface Mount
LPTS (SC-83)
SC-83
hot R8008ANX
Rohm Semiconductor

MOSFET N-CH 800V 8A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.03 Ohm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione7.728
MOSFET (Metal Oxide)
800V
8A (Ta)
10V
5V @ 1mA
39nC @ 10V
1080pF @ 25V
±30V
-
50W (Tc)
1.03 Ohm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RCX120N25
Rohm Semiconductor

MOSFET N-CH 250V 12A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione16.992
MOSFET (Metal Oxide)
250V
12A (Ta)
10V
-
-
-
±30V
-
2.23W (Ta), 40W (Tc)
-
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RCX100N25
Rohm Semiconductor

MOSFET N-CH 250V 10A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione12.864
MOSFET (Metal Oxide)
250V
10A (Ta)
10V
-
-
-
±30V
-
40W (Tc)
-
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot R5009ANX
Rohm Semiconductor

MOSFET N-CH 500V 9A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 720 mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione13.236
MOSFET (Metal Oxide)
500V
9A (Tc)
10V
4.5V @ 1mA
21nC @ 10V
650pF @ 25V
±30V
-
50W (Tc)
720 mOhm @ 4.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6004ENX
Rohm Semiconductor

MOSFET N-CH 600V 4A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione9.408
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
4V @ 1mA
15nC @ 10V
250pF @ 25V
±20V
-
40W (Tc)
980 mOhm @ 1.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RCX081N20
Rohm Semiconductor

MOSFET N-CH 200V 8A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 770 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione6.672
MOSFET (Metal Oxide)
200V
8A (Tc)
10V
5.25V @ 1mA
8.5nC @ 10V
330pF @ 25V
±30V
-
2.23W (Ta), 40W (Tc)
770 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6004ENJTL
Rohm Semiconductor

MOSFET N-CH 600V 4A LPT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS (D2PAK)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione12.996
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
4V @ 1mA
15nC @ 10V
250pF @ 25V
±20V
-
40W (Tc)
980 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
LPTS (D2PAK)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SCT2750NYTB
Rohm Semiconductor

1700V .75 OHM 6A SIC FET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 975 mOhm @ 1.7A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Azione2.624
MOSFET (Metal Oxide)
1700V
5.9A (Tc)
18V
4V @ 630µA
17nC @ 18V
275pF @ 800V
+22V, -6V
-
57W (Tc)
975 mOhm @ 1.7A, 18V
175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot RSJ650N10TL
Rohm Semiconductor

MOSFET N-CH 100V 65A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10780pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 32.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
pacchetto: SC-83
Azione21.456
MOSFET (Metal Oxide)
100V
65A (Ta)
4V, 10V
2.5V @ 1mA
260nC @ 10V
10780pF @ 25V
±20V
-
100W (Tc)
9.1 mOhm @ 32.5A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
RDX100N60FU6
Rohm Semiconductor

MOSFET N-CH 600V 10A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione20.016
MOSFET (Metal Oxide)
600V
10A (Ta)
10V
4V @ 1mA
45nC @ 10V
1600pF @ 25V
±30V
-
45W (Tc)
650 mOhm @ 5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RCJ700N20TL
Rohm Semiconductor

MOSFET N-CH 200V 70A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 42.7 mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
pacchetto: SC-83
Azione13.584
MOSFET (Metal Oxide)
200V
70A (Tc)
10V
5V @ 1mA
125nC @ 10V
6900pF @ 25V
±30V
-
1.56W (Ta), 40W (Tc)
42.7 mOhm @ 35A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
RCJ510N25TL
Rohm Semiconductor

MOSFET N-CH 250V 51A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 25.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
pacchetto: SC-83
Azione14.316
MOSFET (Metal Oxide)
250V
51A (Tc)
10V
5V @ 1mA
120nC @ 10V
7000pF @ 25V
±30V
-
1.56W (Ta), 40W (Tc)
65 mOhm @ 25.5A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
R6008FNJTL
Rohm Semiconductor

MOSFET N-CH 600V 8A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
pacchetto: SC-83
Azione14.724
MOSFET (Metal Oxide)
600V
8A (Tc)
10V
4V @ 1mA
20nC @ 10V
580pF @ 25V
±30V
-
50W (Tc)
950 mOhm @ 4A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
RSJ10HN06TL
Rohm Semiconductor

MOSFET N-CH 60V 100A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 202nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
pacchetto: SC-83
Azione12.516
MOSFET (Metal Oxide)
60V
100A (Ta)
4V, 10V
2.5V @ 1mA
202nC @ 10V
11000pF @ 10V
±20V
-
100W (Tc)
4.2 mOhm @ 50A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
R5019ANJTL
Rohm Semiconductor

MOSFET N-CH 500V 19A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
pacchetto: SC-83
Azione13.830
MOSFET (Metal Oxide)
500V
19A (Ta)
-
-
-
-
-
-
100W (Tc)
-
150°C (TJ)
Surface Mount
LPTS
SC-83