Pagina 36 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  36/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot RDR005N25TL
Rohm Semiconductor

MOSFET N-CH 250V 0.5A SC-96-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8.8 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione612.000
MOSFET (Metal Oxide)
250V
500mA (Ta)
4V, 10V
3V @ 1mA
3.5nC @ 10V
70pF @ 25V
±20V
-
540mW (Ta)
8.8 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RZL025P01TR
Rohm Semiconductor

MOSFET P-CH 12V 2.5A TUMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione3.264
MOSFET (Metal Oxide)
12V
2.5A (Ta)
1.5V, 4.5V
1V @ 1mA
13nC @ 4.5V
1350pF @ 6V
±10V
-
1W (Ta)
61 mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
hot RQ6E035ATTCR
Rohm Semiconductor

MOSFET P-CH 30V 3.5A TSMT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione36.360
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4.5V, 10V
2.5V @ 1mA
10nC @ 10V
475pF @ 15V
±20V
-
1.25W (Ta)
50 mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot RQ5H020SPTL
Rohm Semiconductor

MOSFET P-CH 45V 2A TSMT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione36.360
MOSFET (Metal Oxide)
45V
2A (Ta)
4V, 10V
3V @ 1mA
9.5nC @ 10V
500pF @ 10V
±20V
-
540mW (Ta)
190 mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RQ3E100GNTB
Rohm Semiconductor

MOSFET N-CH 30V 10A 8-HSMT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione6.848
MOSFET (Metal Oxide)
30V
10A (Ta)
4.5V, 10V
2.5V @ 1mA
7.9nC @ 10V
420pF @ 15V
±20V
-
2W (Ta), 15W (Tc)
11.7 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
hot RW1E025RPT2CR
Rohm Semiconductor

MOSFET P-CH 30V 2.5A WEMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione384.000
MOSFET (Metal Oxide)
30V
2.5A (Ta)
4V, 10V
2.5V @ 1mA
5.2nC @ 5V
480pF @ 10V
±20V
-
700mW (Ta)
75 mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
6-WEMT
SOT-563, SOT-666
hot RZF020P01TL
Rohm Semiconductor

MOSFET P-CH 12V 2A TUMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione542.364
MOSFET (Metal Oxide)
12V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
6.5nC @ 4.5V
770pF @ 6V
±10V
-
800mW (Ta)
105 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
RF4E110GNTR
Rohm Semiconductor

MOSFET N-CH 30V 11A 8-HUML

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 504pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-HUML2020L8 (2x2)
  • Package / Case: 8-PowerUDFN
pacchetto: 8-PowerUDFN
Azione5.280
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
2.5V @ 250µA
7.4nC @ 10V
504pF @ 15V
±20V
-
2W (Ta)
11.3 mOhm @ 11A, 10V
150°C (TJ)
Surface Mount
6-HUML2020L8 (2x2)
8-PowerUDFN
hot RUR020N02TL
Rohm Semiconductor

MOSFET N-CH 20V 2A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione748.500
MOSFET (Metal Oxide)
20V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
2nC @ 4.5V
180pF @ 10V
±10V
-
540mW (Ta)
105 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RQ5E040AJTCL
Rohm Semiconductor

MOSFET N-CH 30V 4A SC96

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione72.360
MOSFET (Metal Oxide)
30V
4A (Ta)
2.5V, 4.5V
1.5V @ 1mA
4.3nC @ 4.5V
480pF @ 15V
±12V
-
1W (Ta)
37 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RQ5L015SPTL
Rohm Semiconductor

MOSFET P-CH 60V 1.5A TSMT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione36.360
MOSFET (Metal Oxide)
60V
1.5A (Ta)
4V, 10V
3V @ 1mA
10nC @ 10V
500pF @ 10V
±20V
-
1W (Ta)
280 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RRR040P03TL
Rohm Semiconductor

MOSFET P-CH 30V 4A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: SC-96
Azione910.512
MOSFET (Metal Oxide)
30V
4A (Ta)
4V, 10V
2.5V @ 1mA
10.5nC @ 5V
1000pF @ 10V
±20V
-
1W (Ta)
45 mOhm @ 4A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RU1C002UNTCL
Rohm Semiconductor

MOSFET N-CH 20V 0.2A UMT3F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3F
  • Package / Case: SC-85
pacchetto: SC-85
Azione7.936
MOSFET (Metal Oxide)
20V
200mA (Ta)
1.2V, 2.5V
1V @ 1mA
-
25pF @ 10V
±8V
-
150mW (Ta)
1.2 Ohm @ 200mA, 2.5V
150°C (TJ)
Surface Mount
UMT3F
SC-85
hot RE1J002YNTCL
Rohm Semiconductor

MOSFET N-CH 1.2V DRIVE EMT3FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3F (SOT-416FL)
  • Package / Case: SC-89, SOT-490
pacchetto: SC-89, SOT-490
Azione5.952
MOSFET (Metal Oxide)
50V
200mA (Ta)
0.9V, 4.5V
800mV @ 1mA
-
26pF @ 10V
±8V
-
150mW (Ta)
2.2 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
EMT3F (SOT-416FL)
SC-89, SOT-490
R6035KNZ1C9
Rohm Semiconductor

NCH 600V 35A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 379W (Tc)
  • Rds On (Max) @ Id, Vgs: 102 mOhm @ 18.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione10.716
MOSFET (Metal Oxide)
600V
35A (Tc)
10V
5V @ 1mA
72nC @ 10V
3000pF @ 25V
±20V
-
379W (Tc)
102 mOhm @ 18.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
R6030KNZC8
Rohm Semiconductor

NCH 600V 30A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione9.660
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
5V @ 1mA
56nC @ 10V
2350pF @ 25V
±20V
-
86W (Tc)
130 mOhm @ 14.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6030KNZ1C9
Rohm Semiconductor

NCH 600V 30A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 305W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.524
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
5V @ 1mA
56nC @ 10V
2350pF @ 25V
±20V
-
305W (Tc)
130 mOhm @ 14.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
R6024KNZ1C9
Rohm Semiconductor

NCH 600V 24A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione9.756
MOSFET (Metal Oxide)
600V
24A (Tc)
10V
5V @ 1mA
45nC @ 10V
2000pF @ 25V
±20V
-
245W (Tc)
165 mOhm @ 11.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
R6024KNZC8
Rohm Semiconductor

NCH 600V 24A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione7.128
MOSFET (Metal Oxide)
600V
24A (Tc)
10V
5V @ 1mA
45nC @ 10V
2000pF @ 25V
±20V
-
74W (Tc)
165 mOhm @ 11.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6030KNX
Rohm Semiconductor

NCH 600V 30A POWER MOSFET, TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione11.376
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
5V @ 1mA
56nC @ 10V
2350pF @ 25V
±20V
-
86W (Tc)
130 mOhm @ 14.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6020KNZ1C9
Rohm Semiconductor

NCH 600V 20A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione9.156
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
5V @ 1mA
40nC @ 10V
1550pF @ 25V
±20V
-
231W (Tc)
196 mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
R6020KNZC8
Rohm Semiconductor

NCH 600V 20A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione9.900
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
5V @ 1mA
40nC @ 10V
1550pF @ 25V
±20V
-
68W (Tc)
196 mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6020KNX
Rohm Semiconductor

MOSFET N-CH 600V 20A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione11.568
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
5V @ 1mA
40nC @ 10V
1550pF @ 25V
±20V
Schottky Diode (Isolated)
68W (Tc)
196 mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6024KNX
Rohm Semiconductor

NCH 600V 24A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione11.664
MOSFET (Metal Oxide)
600V
24A (Tc)
10V
5V @ 1mA
45nC @ 10V
2000pF @ 25V
±20V
-
74W (Tc)
165 mOhm @ 11.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6015KNZC8
Rohm Semiconductor

MOSFET N-CH 600V 15A TO3P-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione9.912
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
5V @ 1mA
27.5nC @ 10V
1050pF @ 25V
±20V
Schottky Diode (Isolated)
60W (Tc)
290 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6015KNX
Rohm Semiconductor

NCH 600V 15A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione17.328
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
5V @ 1mA
27.5nC @ 10V
1050pF @ 25V
±20V
-
60W (Tc)
290 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3
R6011KNX
Rohm Semiconductor

MOSFET N-CH 600V 11A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione8.436
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
5V @ 1mA
22nC @ 10V
740pF @ 25V
±20V
Schottky Diode (Isolated)
53W (Tc)
390 mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6009KNX
Rohm Semiconductor

MOSFET N-CH 600V 9A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione10.452
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
5V @ 1mA
16.5nC @ 10V
540pF @ 25V
±20V
Schottky Diode (Isolated)
48W (Tc)
535 mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack