Pagina 35 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  35/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
R6007KNX
Rohm Semiconductor

MOSFET N-CH 600V 7A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione15.336
MOSFET (Metal Oxide)
600V
7A (Tc)
10V
5V @ 1mA
14.5nC @ 10V
470pF @ 25V
±20V
Schottky Diode (Isolated)
46W (Tc)
620 mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6015KNJTL
Rohm Semiconductor

NCH 600V 15A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 184W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione12.744
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
5V @ 1mA
37.5nC @ 10V
1050pF @ 25V
±20V
-
184W (Tc)
290 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R6009KNJTL
Rohm Semiconductor

MOSFET N-CH 600V 9A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione22.164
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
5V @ 1mA
16.5nC @ 10V
540pF @ 25V
±20V
Schottky Diode (Isolated)
94W (Tc)
535 mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R6007KNJTL
Rohm Semiconductor

MOSFET N-CH 600V 7A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione21.000
MOSFET (Metal Oxide)
600V
7A (Tc)
10V
5V @ 1mA
14.5nC @ 10V
470pF @ 25V
±20V
Schottky Diode (Isolated)
78W (Tc)
620 mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R6025FNZC8
Rohm Semiconductor

MOSFET N-CH 600V 25A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione4.992
MOSFET (Metal Oxide)
600V
25A (Tc)
10V
5V @ 1mA
85nC @ 10V
3500pF @ 25V
±30V
-
150W (Tc)
180 mOhm @ 12.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
hot R6015ANX
Rohm Semiconductor

MOSFET N-CH 600V 15A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione13.860
MOSFET (Metal Oxide)
600V
15A (Ta)
10V
4.5V @ 1mA
50nC @ 10V
1700pF @ 25V
±30V
-
50W (Tc)
300 mOhm @ 7.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6015ANZC8
Rohm Semiconductor

MOSFET N-CH 600V 15A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione8.532
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
4.15V @ 1mA
50nC @ 10V
1700pF @ 25V
±30V
-
110W (Tc)
300 mOhm @ 7.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6012FNX
Rohm Semiconductor

MOSFET N-CH 600V 12A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 510 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione19.896
MOSFET (Metal Oxide)
600V
12A (Tc)
10V
5V @ 1mA
35nC @ 10V
1300pF @ 25V
±30V
-
50W (Tc)
510 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6015ENZC8
Rohm Semiconductor

MOSFET N-CH 600V 15A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione9.384
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
4V @ 1mA
40nC @ 10V
910pF @ 25V
±20V
-
120W (Tc)
290 mOhm @ 6.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RCX510N25
Rohm Semiconductor

MOSFET N-CH 250V 51A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione20.088
MOSFET (Metal Oxide)
250V
51A (Ta)
10V
-
-
-
±30V
-
40W (Tc)
-
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6024ENZC8
Rohm Semiconductor

MOSFET N-CH 600V 24A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione6.180
MOSFET (Metal Oxide)
600V
24A (Tc)
10V
4V @ 1mA
70nC @ 10V
1650pF @ 25V
±20V
-
120W (Tc)
165 mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6020ANZC8
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione7.888
MOSFET (Metal Oxide)
600V
20A (Ta)
10V
4.15V @ 1mA
65nC @ 10V
2040pF @ 25V
±30V
-
120W (Tc)
220 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6024ENZ1C9
Rohm Semiconductor

MOSFET N-CH 600V 24A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione6.648
MOSFET (Metal Oxide)
600V
24A (Tc)
10V
4V @ 1mA
70nC @ 10V
1650pF @ 25V
±20V
-
120W (Tc)
165 mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
R6012ANX
Rohm Semiconductor

MOSFET N-CH 600V 12A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione4.880
MOSFET (Metal Oxide)
600V
12A (Ta)
10V
4.5V @ 1mA
35nC @ 10V
1300pF @ 25V
±30V
-
50W (Tc)
420 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6008FNX
Rohm Semiconductor

MOSFET N-CH 600V 8A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione16.344
MOSFET (Metal Oxide)
600V
8A (Tc)
10V
4V @ 1mA
20nC @ 10V
580pF @ 25V
±30V
-
50W (Tc)
950 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RCX700N20
Rohm Semiconductor

MOSFET N-CH 200V 70A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 42.7 mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione6.168
MOSFET (Metal Oxide)
200V
70A (Tc)
10V
5V @ 1mA
125nC @ 10V
6900pF @ 25V
±30V
-
2.23W (Ta), 40W (Tc)
42.7 mOhm @ 35A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R5009FNX
Rohm Semiconductor

MOSFET N-CH 500V 9A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 840 mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione6.660
MOSFET (Metal Oxide)
500V
9A (Tc)
10V
4V @ 1mA
18nC @ 10V
630pF @ 25V
±30V
-
50W (Tc)
840 mOhm @ 4.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6015ENX
Rohm Semiconductor

MOSFET N-CH 600V 15A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione10.260
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
4V @ 1mA
40nC @ 10V
910pF @ 25V
±20V
-
40W (Tc)
290 mOhm @ 6.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6024ENX
Rohm Semiconductor

MOSFET N-CH 600V 24A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione8.952
MOSFET (Metal Oxide)
600V
24A (Tc)
10V
4V @ 1mA
70nC @ 10V
1650pF @ 25V
±20V
-
40W (Tc)
165 mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot R8010ANX
Rohm Semiconductor

MOSFET N-CH 800V 10A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 560 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione14.760
MOSFET (Metal Oxide)
800V
10A (Tc)
10V
5V @ 1mA
62nC @ 10V
1750pF @ 25V
±30V
-
40W (Tc)
560 mOhm @ 5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R5021ANX
Rohm Semiconductor

MOSFET N-CH 500V 21A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 10.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione9.864
MOSFET (Metal Oxide)
500V
21A (Tc)
10V
4.5V @ 1mA
64nC @ 10V
2300pF @ 25V
±30V
-
50W (Tc)
210 mOhm @ 10.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RCX511N25
Rohm Semiconductor

MOSFET N-CH 250V 51A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 25.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione9.228
MOSFET (Metal Oxide)
250V
51A (Tc)
10V
5V @ 1mA
120nC @ 10V
7000pF @ 25V
±30V
-
2.23W (Ta), 40W (Tc)
65 mOhm @ 25.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6011ENX
Rohm Semiconductor

MOSFET N-CH 600V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione10.104
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
4V @ 1mA
32nC @ 10V
670pF @ 25V
±20V
-
40W (Tc)
390 mOhm @ 3.8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot RCX450N20
Rohm Semiconductor

MOSFET N-CH 200V 45A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione567.840
MOSFET (Metal Oxide)
200V
45A (Tc)
10V
5V @ 1mA
80nC @ 10V
4200pF @ 25V
±30V
-
2.23W (Ta), 40W (Tc)
55 mOhm @ 22.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6009ENX
Rohm Semiconductor

MOSFET N-CH 600V 9A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione8.340
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
4V @ 1mA
23nC @ 10V
430pF @ 25V
±20V
-
40W (Tc)
535 mOhm @ 2.8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R8002ANX
Rohm Semiconductor

MOSFET N-CH 800V 2A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione18.936
MOSFET (Metal Oxide)
800V
2A (Tc)
10V
5V @ 1mA
12.7nC @ 10V
210pF @ 25V
±30V
-
35W (Tc)
4.3 Ohm @ 1A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RCX220N25
Rohm Semiconductor

MOSFET N-CH 250V 22A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione6.480
MOSFET (Metal Oxide)
250V
22A (Tc)
10V
5V @ 1mA
60nC @ 10V
3200pF @ 25V
±30V
-
2.23W (Ta), 40W (Tc)
140 mOhm @ 11A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot R6007ENX
Rohm Semiconductor

MOSFET N-CH 600V 7A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 2.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacchetto: TO-220-2 Full Pack
Azione13.236
MOSFET (Metal Oxide)
600V
7A (Tc)
10V
4V @ 1mA
20nC @ 10V
390pF @ 25V
±20V
-
40W (Tc)
620 mOhm @ 2.4A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack