Pagina 146 - Prodotti Toshiba Semiconductor and Storage

Numero di parte	Produttore	Descrizione	pacchetto	Azione
TK31J60W,S1VQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 30.8A TO-3P(N) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	pacchetto: TO-3P-3, SC-65-3	Azione6.564
TK20V60W5,LVQ	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (8x8) Package / Case: 4-VSFN Exposed Pad	pacchetto: 4-VSFN Exposed Pad	Azione20.664
2SC2655-Y,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione6.256
2SC2229-O(MITIF,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione5.600
2SA2154CT-GR,L3F	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.1A Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	pacchetto: SC-101, SOT-883	Azione6.432
2SC4116-Y,LF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A USM Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacchetto: SC-70, SOT-323	Azione2.863.872
RN1102MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.15W VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	pacchetto: SOT-723	Azione3.392
RN2967FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	pacchetto: SOT-563, SOT-666	Azione6.912
RN2712JE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ESV Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	pacchetto: SOT-553	Azione35.682
1SS389,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 10V 100MA ESC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 10V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max)	pacchetto: SC-79, SOD-523	Azione5.376
CMS01(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 370mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	pacchetto: SOD-128	Azione3.360
1SS382TE85LF	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 100MA USQ Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-82 Supplier Device Package: -	pacchetto: SC-82	Azione4.672
TA48015BF(T6L1,NQ)	Toshiba Semiconductor and Storage	IC REG LINEAR 1.5V 1A PW-MOLD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): 1.5V Voltage - Output (Max): - Voltage Dropout (Max): 1.9V @ 1A (Typ) Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 1.7mA ~ 20mA PSRR: 65dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione24.000
TCK22891G,LF	Toshiba Semiconductor and Storage	IC PWR SWITCH P-CHAN 1:1 WCSP6E Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.4 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 400mA Rds On (Typ): 31 mOhm Input Type: Non-Inverting Features: Load Discharge Fault Protection: Current Limiting (Fixed), Over Temperature Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UFBGA, WLCSP Supplier Device Package: 6-WCSPE (0.80x1.2)	pacchetto: 6-UFBGA, WLCSP	Azione45.546
TB67S105FTG,EL	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PAR 48WQFN Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel, Serial Technology: Power MOSFET Step Resolution: 1, 1/2 Applications: General Purpose Current - Output: 2.4A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 40 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Supplier Device Package: 48-WQFN (7x7)	pacchetto: 48-WFQFN Exposed Pad	Azione30.786
TC7WP3125FC(TE85L)	Toshiba Semiconductor and Storage	IC BUS SWITCH SPST DUAL CST8 Type: Bus Switch Circuit: 2 x 1:1 Independent Circuits: 1 Current - Output High, Low: 12mA, 12mA Voltage Supply Source: Dual Supply Voltage - Supply: 1.1 V ~ 2.7 V, 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-XFDFN Exposed Pad Supplier Device Package: CST8	pacchetto: 8-XFDFN Exposed Pad	Azione3.088
TC74LCX125FT(EL)	Toshiba Semiconductor and Storage	IC BUS BUFFER QDLV N-INV 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	pacchetto: 14-TSSOP (0.173", 4.40mm Width)	Azione15.900
TC75W60FU(TE12L,F)	Toshiba Semiconductor and Storage	IC OPAMP GP 8SSOP Amplifier Type: General Purpose Number of Circuits: 2 Output Type: - Slew Rate: 5.1 V/µs Gain Bandwidth Product: - -3db Bandwidth: - Current - Input Bias: 1pA Voltage - Input Offset: 2mV Current - Supply: 660µA Current - Output / Channel: 1.25mA Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8	pacchetto: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	Azione2.912
TLBF1108(T11(O	Toshiba Semiconductor and Storage	LED BLUE 4SMD Color: Blue Configuration: - Lens Color: - Lens Transparency: - Millicandela Rating: 560mcd Lens Style/Size: Oval with Flat Top Voltage - Forward (Vf) (Typ): 3.5V Current - Test: 40mA Viewing Angle: - Mounting Type: Surface Mount Wavelength - Dominant: 470nm Wavelength - Peak: 468nm Features: - Package / Case: 4-SMD, J-Lead Supplier Device Package: - Size / Dimension: 3.20mm L x 2.90mm W Height (Max): 2.10mm	pacchetto: 4-SMD, J-Lead	Azione2.592
TC35662IXBG(EL)	Toshiba Semiconductor and Storage	COMBO WIRELESS CHIP SUPPORTING W Type: TxRx + MCU RF Family/Standard: Bluetooth, WiFi Protocol: 802.11a/b/g/n, Bluetooth v4.2 Modulation: - Frequency: 2.4GHz Data Rate (Max): 150Mbps Power - Output: 18dBm Sensitivity: -95dBm Memory Size: - Serial Interfaces: I2C, I2S, SPI, UART, USB GPIO: - Voltage - Supply: 3.3V Current - Receiving: - Current - Transmitting: - Operating Temperature: -40°C ~ 85°C Package / Case: -	pacchetto: -	Azione3.744
TB67S249FTG,EL	Toshiba Semiconductor and Storage	STEPPER MOTOR DRIVER IC WITH ACT Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (8) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 Applications: General Purpose Current - Output: 4.5A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 47 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	pacchetto: 48-VFQFN Exposed Pad	Azione7.024
TBD62304APG,HZ	Toshiba Semiconductor and Storage	TRANSISTOR ARRAY INTERFACE DRIVE Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	pacchetto: 16-DIP (0.300", 7.62mm)	Azione17.124
74VHC02FT	Toshiba Semiconductor and Storage	IC GATE NOR 4CH 2-INP 14TSSOPB Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOPB Package / Case: 14-TSSOP (0.173", 4.40mm Width)	pacchetto: 14-TSSOP (0.173", 4.40mm Width)	Azione6.688
TB9120FTG(EL)	Toshiba Semiconductor and Storage	AUTOMOTIVE STEPPING MOTOR DRIVER Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver Output Configuration: Pre-Driver - Half Bridge (2) Interface: PWM Technology: Bi-CMOS Step Resolution: 1 ~ 1/256 Applications: Automotive Current - Output: - Voltage - Supply: 4.75V ~ 5.25V Voltage - Load: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount, Wettable Flank Package / Case: 28-VFQFN Exposed Pad Supplier Device Package: 28-VQFN (6x6)	pacchetto: 28-VFQFN Exposed Pad	Azione3.680
TK4R4P06PL-RQ	Toshiba Semiconductor and Storage	MOSFET N-CHANNEL 60V 58A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Azione10.155
TC74LCX14FT-EL	Toshiba Semiconductor and Storage	IC INVERTER HEX SCHMITT 14-TSSOP Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 1 Features: Schmitt Trigger Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Max): 10 µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.3V ~ 0.6V Logic Level - High: 1.35V ~ 2.2V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	pacchetto: -	Request a Quote
RN2115-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacchetto: -	Azione18.000
HN4B102J-TE85L-F	Toshiba Semiconductor and Storage	PB-F POWER TRANSISTOR SMV MOQ=30 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 1.8A, 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 2V Power - Max: 750mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	pacchetto: -	Azione8.646

TK31J60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 30.8A TO-3P(N)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)
Package / Case: TO-3P-3, SC-65-3

pacchetto: TO-3P-3, SC-65-3

Azione6.564

TK20V60W5,LVQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (8x8)
Package / Case: 4-VSFN Exposed Pad

pacchetto: 4-VSFN Exposed Pad

Azione20.664

2SC2655-Y,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione6.256

2SC2229-O(MITIF,M)

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione5.600

2SA2154CT-GR,L3F

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.1A

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

pacchetto: SC-101, SOT-883

Azione6.432

2SC4116-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USM

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacchetto: SC-70, SOT-323

Azione2.863.872

RN1102MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.15W VESM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

pacchetto: SOT-723

Azione3.392

RN2967FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

pacchetto: SOT-563, SOT-666

Azione6.912

RN2712JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

pacchetto: SOT-553

Azione35.682

1SS389,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA ESC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 10V
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)

pacchetto: SC-79, SOD-523

Azione5.376

CMS01(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 370mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: SOD-128

Azione3.360

1SS382TE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA USQ

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-82
Supplier Device Package: -

pacchetto: SC-82

Azione4.672

TA48015BF(T6L1,NQ)

Toshiba Semiconductor and Storage

IC REG LINEAR 1.5V 1A PW-MOLD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 16V
Voltage - Output (Min/Fixed): 1.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.9V @ 1A (Typ)
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 1.7mA ~ 20mA
PSRR: 65dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione24.000

TCK22891G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.4 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Rds On (Typ): 31 mOhm
Input Type: Non-Inverting
Features: Load Discharge
Fault Protection: Current Limiting (Fixed), Over Temperature
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UFBGA, WLCSP
Supplier Device Package: 6-WCSPE (0.80x1.2)

pacchetto: 6-UFBGA, WLCSP

Azione45.546

TB67S105FTG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel, Serial
Technology: Power MOSFET
Step Resolution: 1, 1/2
Applications: General Purpose
Current - Output: 2.4A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 40 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Supplier Device Package: 48-WQFN (7x7)

pacchetto: 48-WFQFN Exposed Pad

Azione30.786

TC7WP3125FC(TE85L)

Toshiba Semiconductor and Storage

IC BUS SWITCH SPST DUAL CST8

Type: Bus Switch
Circuit: 2 x 1:1
Independent Circuits: 1
Current - Output High, Low: 12mA, 12mA
Voltage Supply Source: Dual Supply
Voltage - Supply: 1.1 V ~ 2.7 V, 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: CST8

pacchetto: 8-XFDFN Exposed Pad

Azione3.088

TC74LCX125FT(EL)

Toshiba Semiconductor and Storage

IC BUS BUFFER QDLV N-INV 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

Azione15.900

TC75W60FU(TE12L,F)

Toshiba Semiconductor and Storage

IC OPAMP GP 8SSOP

Amplifier Type: General Purpose
Number of Circuits: 2
Output Type: -
Slew Rate: 5.1 V/µs
Gain Bandwidth Product: -
-3db Bandwidth: -
Current - Input Bias: 1pA
Voltage - Input Offset: 2mV
Current - Supply: 660µA
Current - Output / Channel: 1.25mA
Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: SM8

pacchetto: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

Azione2.912

TLBF1108(T11(O

Toshiba Semiconductor and Storage

LED BLUE 4SMD

Color: Blue
Configuration: -
Lens Color: -
Lens Transparency: -
Millicandela Rating: 560mcd
Lens Style/Size: Oval with Flat Top
Voltage - Forward (Vf) (Typ): 3.5V
Current - Test: 40mA
Viewing Angle: -
Mounting Type: Surface Mount
Wavelength - Dominant: 470nm
Wavelength - Peak: 468nm
Features: -
Package / Case: 4-SMD, J-Lead
Supplier Device Package: -
Size / Dimension: 3.20mm L x 2.90mm W
Height (Max): 2.10mm

pacchetto: 4-SMD, J-Lead

Azione2.592

TC35662IXBG(EL)

Toshiba Semiconductor and Storage

COMBO WIRELESS CHIP SUPPORTING W

Type: TxRx + MCU
RF Family/Standard: Bluetooth, WiFi
Protocol: 802.11a/b/g/n, Bluetooth v4.2
Modulation: -
Frequency: 2.4GHz
Data Rate (Max): 150Mbps
Power - Output: 18dBm
Sensitivity: -95dBm
Memory Size: -
Serial Interfaces: I2C, I2S, SPI, UART, USB
GPIO: -
Voltage - Supply: 3.3V
Current - Receiving: -
Current - Transmitting: -
Operating Temperature: -40°C ~ 85°C
Package / Case: -

pacchetto: -

Azione3.744

TB67S249FTG,EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER IC WITH ACT

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (8)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Applications: General Purpose
Current - Output: 4.5A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 47 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

pacchetto: 48-VFQFN Exposed Pad

Azione7.024

TBD62304APG,HZ

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

pacchetto: 16-DIP (0.300", 7.62mm)

Azione17.124

74VHC02FT

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14TSSOPB

Logic Type: NOR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOPB
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

Azione6.688

TB9120FTG(EL)

Toshiba Semiconductor and Storage

AUTOMOTIVE STEPPING MOTOR DRIVER

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver
Output Configuration: Pre-Driver - Half Bridge (2)
Interface: PWM
Technology: Bi-CMOS
Step Resolution: 1 ~ 1/256
Applications: Automotive
Current - Output: -
Voltage - Supply: 4.75V ~ 5.25V
Voltage - Load: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 28-VFQFN Exposed Pad
Supplier Device Package: 28-VQFN (6x6)

pacchetto: 28-VFQFN Exposed Pad

Azione3.680

TK4R4P06PL-RQ

Toshiba Semiconductor and Storage

MOSFET N-CHANNEL 60V 58A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

Azione10.155

TC74LCX14FT-EL

Toshiba Semiconductor and Storage

IC INVERTER HEX SCHMITT 14-TSSOP

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 1
Features: Schmitt Trigger
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Max): 10 µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.3V ~ 0.6V
Logic Level - High: 1.35V ~ 2.2V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

pacchetto: -

Request a Quote

RN2115-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacchetto: -

Azione18.000

HN4B102J-TE85L-F

Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR SMV MOQ=30

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 1.8A, 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 2V
Power - Max: 750mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

pacchetto: -

Azione8.646