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Prodotti Toshiba Semiconductor and Storage

Record 4.549
Pagina  148/163
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
2SK208-GR(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH S-MINI FET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione22.878
SSM4K27CTTPL3
Toshiba Semiconductor and Storage

MOSFET N-CH 20V .5A CST4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 174pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 205 mOhm @ 250mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST4 (1.2x0.8)
  • Package / Case: 4-SMD, No Lead
pacchetto: 4-SMD, No Lead
Azione3.440
hot SSM6J414TU,LF
Toshiba Semiconductor and Storage

MOSFET P CH 20V 6A UF6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 6A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione216.000
SSM3K17FU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 50V 0.1A USM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
  • Vgs (Max): ±7V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: USM
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione207.528
TK290P65Y,RQ
Toshiba Semiconductor and Storage

MOSFET TRANSISTOR DPAK(OS) PD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 5.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione16.152
2SC2229-O(T6MIT1FM
Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacchetto: TO-226-3, TO-92-3 Long Body
Azione7.344
TTA003,L1NQ(O
Toshiba Semiconductor and Storage

TRANS PNP 80V 3A PW-MOLD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 10W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.080
hot 2SC4116-BL,LF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
pacchetto: SC-70, SOT-323
Azione1.080.000
RN1104ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
pacchetto: SC-101, SOT-883
Azione4.544
RN1905(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione7.584
TA58L12S(FJTN,QM)
Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 250mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: LSTM
pacchetto: TO-220-3 Full Pack
Azione6.016
TCR3DF30,LM
Toshiba Semiconductor and Storage

IC REG LINEAR 3V 300MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 65µA ~ 78µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
pacchetto: SC-74A, SOT-753
Azione26.172
TCR2DG15,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 200MA 4WCSP

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, CSPBGA
  • Supplier Device Package: 4-WCSP (0.79x0.79)
pacchetto: 4-XFBGA, CSPBGA
Azione26.940
TCR2EN27,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 2.7V 200MA 4-SDFN

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.7V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
pacchetto: 4-XFDFN Exposed Pad
Azione238.296
TC7QPB9306FT(EL)
Toshiba Semiconductor and Storage

IC BUS SWITCH LV/LP 4B 14-TSSOP

  • Type: Bus Switch
  • Circuit: 4 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Dual Supply
  • Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOP
pacchetto: 14-TSSOP (0.173", 4.40mm Width)
Azione23.802
TC7W08FKTE85LF
Toshiba Semiconductor and Storage

IC GATE AND 2CH 2-INP US8

  • Logic Type: AND Gate
  • Number of Circuits: 2
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Logic Level - Low: 0.5 V ~ 1.8 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: US8
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
pacchetto: 8-VFSOP (0.091", 2.30mm Width)
Azione5.936
TC74AC14FTEL
Toshiba Semiconductor and Storage

IC INVERTER HEX 14TSSOP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: Schmitt Trigger
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 4µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.5 V ~ 1.1 V
  • Logic Level - High: 2.2 V ~ 3.9 V
  • Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
pacchetto: 14-TSSOP (0.173", 4.40mm Width)
Azione23.874
TC7WZ04FK,LJ(CT
Toshiba Semiconductor and Storage

IC INVERTER 3CH US8

  • Logic Type: Inverter
  • Number of Circuits: 3
  • Number of Inputs: 3
  • Features: -
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 10µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: -
  • Logic Level - High: -
  • Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: US8
  • Package / Case: 8-VSSOP, 8-MSOP (0.118", 3.00mm Width)
pacchetto: 8-VSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione25.452
DF2S6.8UCT(TPL3)
Toshiba Semiconductor and Storage

TVS DIODE 19VWM 22VC CST2

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 19V (Max)
  • Voltage - Breakdown (Min): 22V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 1.6pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: CST2
pacchetto: SOD-882
Azione100.578
TLP183(Y-TPL,E
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 150% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 6-SO, 4 Lead
pacchetto: 6-SMD (4 Leads), Gull Wing
Azione3.436
TLP183(BLL-TPL,E
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 200% @ 500µA
  • Current Transfer Ratio (Max): 400% @ 500µA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 6-SO, 4 Lead
pacchetto: 6-SMD (4 Leads), Gull Wing
Azione2.574
TLP2368(E)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV OPEN COLL SO6-5

  • Number of Channels: 1
  • Inputs - Side 1/Side 2: 1/0
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 20kV/µs
  • Input Type: DC
  • Output Type: Open Collector
  • Current - Output / Channel: 25mA
  • Data Rate: 20MBd
  • Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
  • Rise / Fall Time (Typ): 30ns, 30ns
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 25mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
  • Supplier Device Package: 6-SO, 5 Lead
pacchetto: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Azione8.874
TCR3DM11-RF-SE
Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.65V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-DFN (1x1)
pacchetto: -
Azione28.110
TK160F10N1L-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione26.400
SSM3K48FU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA USM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15.1 pF @ 3 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USM
  • Package / Case: SC-70, SOT-323
pacchetto: -
Azione66.519
SSM6K818R-LF
Toshiba Semiconductor and Storage

N-CH MOSFET 30V, +/-20V, 15A ,0.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
pacchetto: -
Azione17.220
TPHR9003NL1-LQ
Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=78W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione34.062
SSM3K15CT-L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA CST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3
  • Package / Case: SC-101, SOT-883
pacchetto: -
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