Prodotti Toshiba Semiconductor and Storage

TK15A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 15A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

TK100L60W,VQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 100A TO3P(L)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 30V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 797W (Tc)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(L)
• Package / Case: TO-3PL

pacchetto: TO-3PL

SSM6N58NU,LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate, 1.8V Drive
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4A
• Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
• Power - Max: 1W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-UDFN (2x2)

pacchetto: 6-WDFN Exposed Pad

2SA1586SU-Y,LF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A USM

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

pacchetto: SC-70, SOT-323

2SA1162S-Y,LF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A S-MINI

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

pacchetto: TO-236-3, SC-59, SOT-23-3

RN1117(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

pacchetto: SC-75, SOT-416

RN2306,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

pacchetto: SC-70, SOT-323

TCR5AM10,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1V 500MA 5DFNB

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 55µA ~ 68µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

pacchetto: 4-XDFN Exposed Pad

TAR5S33TE85LF

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA 5SSOP

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

pacchetto: SC-74A, SOT-753

TCR5AM06,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 0.6V 500MA 5DFNB

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.13V @ 300mA
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 55µA ~ 68µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

pacchetto: 4-XDFN Exposed Pad

TB6559FG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16HSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: NMOS, PMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1A
• Voltage - Supply: 10 V ~ 30 V
• Voltage - Load: 10 V ~ 30 V
• Operating Temperature: -30°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
• Supplier Device Package: 16-HSOP

pacchetto: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs

TC58NYG1S3HBAI6

Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 67FBGA

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 67-VFBGA
• Supplier Device Package: 67-VFBGA (6.5x8)

pacchetto: 67-VFBGA

TC74VHCT138AFTEL

Toshiba Semiconductor and Storage

IC DECODER 3-TO-8 LINE 16-TSSOP

• Type: Decoder/Demultiplexer
• Circuit: 1 x 3:8
• Independent Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

pacchetto: 16-TSSOP (0.173", 4.40mm Width)

74LCX373FT(AE)

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20TSSOP

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 1.65 V ~ 3.6 V
• Independent Circuits: 1
• Delay Time - Propagation: 1.5ns
• Current - Output High, Low: 24mA, 24mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

pacchetto: 20-TSSOP (0.173", 4.40mm Width)

TC7SZ08F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INP SMV

• Logic Type: AND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

pacchetto: SC-74A, SOT-753

TC75W58FU,LF

Toshiba Semiconductor and Storage

IC COMP GP CMOS DUAL SM8

• Type: General Purpose
• Number of Elements: 2
• Output Type: Open Drain
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Voltage - Input Offset (Max): 7mV @ 5V
• Current - Input Bias (Max): 1pA @ 5V
• Current - Output (Typ): 25mA
• Current - Quiescent (Max): 22µA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): 800ns
• Hysteresis: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Mounting Type: Surface Mount
• Supplier Device Package: SM8

pacchetto: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

TC7SB66CFU,LF

Toshiba Semiconductor and Storage

IC BUS SWITCH LOCAP USV

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 7 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 5pF
• Current - Leakage (IS(off)) (Max): 1µA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

pacchetto: 5-TSSOP, SC-70-5, SOT-353

TLP4222G-2(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 8-DIP

• Circuit: DPST (2 Form B)
• Output Type: AC, DC
• On-State Resistance (Max): 50 Ohm
• Load Current: 100mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Relay Type: Relay

pacchetto: 8-DIP (0.300", 7.62mm)

TLP3406S(TP,E

Toshiba Semiconductor and Storage

PHOTORELAY 1.5A 30V S-VSON4

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 200 mOhm
• Load Current: 1.5A
• Voltage - Input: 1.21VDC
• Voltage - Load: 0 ~ 30 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.079", 2.00mm)
• Supplier Device Package: S-VSON4
• Relay Type: Relay

pacchetto: 4-SMD (0.079", 2.00mm)

TLP281-4(TP,J,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 4CH TRANS 16-SOP

• Number of Channels: 4
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 16-SOP

pacchetto: 16-SOIC (0.173", 4.40mm Width)

TLP292-4(V4-GB,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

• Number of Channels: 4
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

pacchetto: 16-SOIC (0.179", 4.55mm Width)

TK4A80E-S4X

Toshiba Semiconductor and Storage

PB-FPOWERMOSFETTRANSISTORTO-220S

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 400µA
• Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: -

TC74LCX373FT-EL

Toshiba Semiconductor and Storage

IC D-TYPE TRANSP SGL 8:8 20TSSOP

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 2V ~ 3.6V
• Independent Circuits: 1
• Delay Time - Propagation: 1.5ns
• Current - Output High, Low: 24mA, 24mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

pacchetto: -

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RN2115MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

pacchetto: -

TCB010FNG

Toshiba Semiconductor and Storage

IC REG AUTO APPL 5OUT 15HZIP

• Applications: Converter, Car Audio System
• Voltage - Input: 18V
• Number of Outputs: 7
• Voltage - Output: 3.3V, 3.3V, 5V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: 36-HSSOP

pacchetto: -

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TCR3DF36-LM-CT

Toshiba Semiconductor and Storage

PB-F SMV POINT DDRULATOR (SINGLE

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.6V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.22V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: -

TK62N60W5-S1VF

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
• Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

pacchetto: -

HN2D01FU-TE85L-F

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 80MA US6

• Diode Configuration: 3 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io) (per Diode): 80mA
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 80 V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: -

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